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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| FMV16N60ESSC-P DISTI # FE0000000004764 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: FMV16N50E OMO.#: OMO-FMV16N50E-1190 |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: FMV16N50ES OMO.#: OMO-FMV16N50ES-1190 |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: FMV16N50ES TK15A50D OMO.#: OMO-FMV16N50ES-TK15A50D-1190 |
Nuevo y original |
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Mfr.#: FMV16N50ES,16N50ES,16N50 |
Nuevo y original |
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Mfr.#: FMV16N50ES,FMV16N50E,16N |
Nuevo y original |
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Mfr.#: FMV16N60E OMO.#: OMO-FMV16N60E-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: FMV16N60E-S25PP OMO.#: OMO-FMV16N60E-S25PP-1190 |
Nuevo y original |
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Mfr.#: FMV16N60ES OMO.#: OMO-FMV16N60ES-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: FMV16N60ESC-P OMO.#: OMO-FMV16N60ESC-P-1190 |
Nuevo y original |
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Mfr.#: FMV16N60G OMO.#: OMO-FMV16N60G-1190 |
Nuevo y original |