IPB180N06S4H1ATMA2

IPB180N06S4H1ATMA2
Mfr. #:
IPB180N06S4H1ATMA2
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 60V 180A D2PAK-6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB180N06S4H1ATMA2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB180N06S4H1ATMA2 DatasheetIPB180N06S4H1ATMA2 Datasheet (P4-P6)IPB180N06S4H1ATMA2 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-7
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
180 A
Rds On - Resistencia de la fuente de drenaje:
1.7 mOhms
Configuración:
Único
Calificación:
AEC-Q101
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Serie:
IPB180N06
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
IPB180N06S4-H1 IPB18N6S4H1XT SP001028786
Unidad de peso:
0.056438 oz
Tags
IPB180N06, IPB180N0, IPB180N, IPB18, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK Infineon IPB180N06S4H1ATMA2
***ical
Trans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) TO-263
***et Europe
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263
***ronik
MOSFET 60V 1.7mOHM AECQ TO252
***i-Key
MOSFET N-CH 60V 180A TO263-7
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0013Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; No. Of Pins:7Pins
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 60V, 180A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 60V, 180A, TO-263-7; Polarità Transistor:Canale N; Corrente Continua di Drain Id:180A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:250W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Ultra low RDSon; Ultra high ID | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Parte # Mfg. Descripción Valores Precio
IPB180N06S4H1ATMA2
DISTI # V72:2272_06378683
Infineon Technologies AGTrans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
375
  • 250:$2.4169
  • 100:$2.5600
  • 25:$2.9430
  • 10:$2.9740
  • 1:$3.4660
IPB180N06S4H1ATMA2
DISTI # IPB180N06S4H1ATMA2-ND
Infineon Technologies AGMOSFET N-CH 60V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$2.1867
IPB180N06S4H1ATMA2
DISTI # 27460496
Infineon Technologies AGTrans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant
375
  • 250:$2.4169
  • 100:$2.5600
  • 25:$2.9430
  • 10:$2.9740
  • 4:$3.4660
IPB180N06S4H1ATMA2
DISTI # IPB180N06S4H1ATMA2
Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N06S4H1ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.9900
  • 2000:$1.8900
  • 4000:$1.8900
  • 6000:$1.7900
  • 10000:$1.7900
IPB180N06S4H1ATMA2
DISTI # 49AC0283
Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 60V, 180A, TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes1134
  • 500:$2.3600
  • 250:$2.6300
  • 100:$2.7700
  • 50:$2.9100
  • 25:$3.0600
  • 10:$3.2000
  • 1:$3.7600
IPB180N06S4H1ATMA2.
DISTI # 32AC0677
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:250W,No. of Pins:7Pins0
  • 4000:$1.5900
  • 2000:$1.6900
  • 1:$1.7900
IPB180N06S4H1ATMA2
DISTI # 726-IPB180N06S4H1ATM
Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6
RoHS: Compliant
13325
  • 1:$3.7600
  • 10:$3.2000
  • 100:$2.7700
  • 250:$2.6300
  • 500:$2.3600
  • 1000:$1.9900
IPB180N06S4-H1
DISTI # 726-IPB180N06S4-H1
Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6 OptiMOS-T2
RoHS: Compliant
0
    IPB180N06S4H1ATMA2
    DISTI # 8275182P
    Infineon Technologies AGMOSFET N-CH 180A 60V OPTIMOS-T2 TO263-7, RL270
    • 100:£1.6950
    • 200:£1.6110
    IPB180N06S4H1ATMA2
    DISTI # 2839451
    Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 60V, 180A, TO263
    RoHS: Compliant
    1134
    • 1000:$3.0900
    • 500:$3.2500
    • 250:$3.4300
    • 100:$3.6200
    • 10:$4.1000
    • 1:$4.3800
    IPB180N06S4H1ATMA2
    DISTI # 2839451
    Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 60V, 180A, TO263
    RoHS: Compliant
    1381
    • 500:£1.4800
    • 250:£1.5600
    • 100:£1.6400
    • 10:£2.1400
    • 1:£3.2800
    IPB180N06S4H1ATMA2
    DISTI # C1S322000626524
    Infineon Technologies AGTrans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant
    1134
    • 1000:$2.1900
    • 500:$2.2400
    • 250:$2.4700
    • 100:$2.6400
    • 10:$3.3700
    • 1:$5.0100
    IPB180N06S4H1ATMA2
    DISTI # C1S322000331501
    Infineon Technologies AGTrans MOSFET N-CH 60V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant
    375
    • 250:$2.4169
    • 100:$2.5600
    • 25:$2.9430
    • 10:$2.9740
    • 1:$3.4660
    Imagen Parte # Descripción
    UCC27517DBVR

    Mfr.#: UCC27517DBVR

    OMO.#: OMO-UCC27517DBVR

    Gate Drivers 4A/4A Sgl Ch Hi-Spd Lo-side Gate Driver
    REF3330AIDBZR

    Mfr.#: REF3330AIDBZR

    OMO.#: OMO-REF3330AIDBZR

    Voltage References 30ppm/C Drift 3.9uA Vltg Ref
    LM4041QCEM3-ADJ/NO

    Mfr.#: LM4041QCEM3-ADJ/NO

    OMO.#: OMO-LM4041QCEM3-ADJ-NO

    Voltage References Prec Micropower Shunt VRef
    SN74HC08DR

    Mfr.#: SN74HC08DR

    OMO.#: OMO-SN74HC08DR

    Logic Gates Quad 2-Input
    LTC3638EMSE#PBF

    Mfr.#: LTC3638EMSE#PBF

    OMO.#: OMO-LTC3638EMSE-PBF

    Switching Voltage Regulators High Efficiency, 150V 250mA Synchronous Step-Down Converter
    61300511121

    Mfr.#: 61300511121

    OMO.#: OMO-61300511121

    Headers & Wire Housings WR-PHD 2.54mm Hdr 5P Single Str Gold
    CGA5L1X7R1C106K160AC

    Mfr.#: CGA5L1X7R1C106K160AC

    OMO.#: OMO-CGA5L1X7R1C106K160AC

    Multilayer Ceramic Capacitors MLCC - SMD/SMT CGA 1206 16V 10uF X7R 10% AEC-Q200
    REF3330AIDBZR

    Mfr.#: REF3330AIDBZR

    OMO.#: OMO-REF3330AIDBZR-TEXAS-INSTRUMENTS

    Voltage References 30ppm/C Drift 3.9uA Vltg Ref
    LM4041QCEM3-ADJ/NO

    Mfr.#: LM4041QCEM3-ADJ/NO

    OMO.#: OMO-LM4041QCEM3-ADJ-NO-TEXAS-INSTRUMENTS

    Voltage References Prec Micropower Shunt VRef
    SN74HC08DR

    Mfr.#: SN74HC08DR

    OMO.#: OMO-SN74HC08DR-TEXAS-INSTRUMENTS

    Logic Gates Quad 2-Input
    Disponibilidad
    Valores:
    Available
    En orden:
    1992
    Ingrese la cantidad:
    El precio actual de IPB180N06S4H1ATMA2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,75 US$
    3,75 US$
    10
    3,19 US$
    31,90 US$
    100
    2,76 US$
    276,00 US$
    250
    2,62 US$
    655,00 US$
    500
    2,35 US$
    1 175,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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