OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

LMG1210RVRT

LMG1210RVRT
Mfr. #:
LMG1210RVRT
Descripción:
Gate Drivers EGAN FET 200V HALF-BRIDGE DRIVER
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
LMG1210RVRT Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
LMG1210RVRT más información LMG1210RVRT Product Details
Atributo del producto
Valor de atributo
Fabricante:
Instrumentos Texas
Categoria de producto:
Controladores de puerta
RoHS:
Y
Producto:
Controladores de la puerta MOSFET
Escribe:
Lado alto, lado bajo
Estilo de montaje:
SMD / SMT
Paquete / Caja:
WQFN-19
Número de conductores:
2 Driver
Número de salidas:
2 Output
Corriente de salida:
3 A
Hora de levantarse:
0.5 ns
Otoño:
0.5 ns
Voltaje de suministro - Min:
4.75 V
Voltaje de suministro - Máx:
18 V
Retardo de propagación - Máx:
20 ns
Corriente de suministro de funcionamiento:
380 uA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 125 C
Serie:
LMG1210
Embalaje:
Carrete
Rango de temperatura de funcionamiento:
- 40 C to + 125 C
Tensión de salida:
5 V
Tecnología:
GaN
Marca:
Instrumentos Texas
Tipo de lógica:
TTL
Tiempo de inactividad - Máx .:
18 ns
Tiempo máximo de retardo de apagado:
18 ns
Tiempo máximo de retardo de encendido:
18 ns
Sensible a la humedad:
Yes
Tipo de producto:
Controladores de puerta
Rds On - Resistencia de la fuente de drenaje:
400 mOhms
Cantidad de paquete de fábrica:
250
Subcategoría:
PMIC: circuitos integrados de administración de energía
Tags
LMG12, LMG1, LMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    C***d
    C***d
    UK

    There's a good video on YouTube demonstrating how to program the timer, search for '35238MP'.

    2019-06-28
    N***a
    N***a
    RU

    Class

    2019-05-13
***AS INSRUMENT
The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.
***AS INSRUMENTS
To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.
***INS
The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.
LMG1210 200V Half-Bridge MOSFET & GaN FET Drivers
OMO Electronic LMG1210 200V Half-Bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) Drivers are designed for ultra-high frequency and high-efficiency applications. The device is ideal for applications that feature adjustable deadtime capability, very small propagation delay, and 3.4ns high-side low-side matching to optimize system efficiency. The LMG1210 MOSFET and GaN FET Drivers offer an internal LDO which ensures a gate-drive voltage of 5V regardless of supply voltage.
Parte # Descripción Valores Precio
LMG1210RVRT
DISTI # 32147604		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time1750
  • 1250:$3.0728
  • 500:$3.6434
  • 250:$4.0604
LMG1210RVRT
DISTI # 296-53417-1-ND		200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		341In Stock
  • 100:$4.4528
  • 10:$5.4350
  • 1:$6.0500
LMG1210RVRT
DISTI # 296-53417-6-ND		200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		341In Stock
  • 100:$4.4528
  • 10:$5.4350
  • 1:$6.0500
LMG1210RVRT
DISTI # 296-53417-2-ND		200V, 1.5A/3A HALF BRIDGE MOSFET
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		250In Stock
  • 1250:$3.1038
  • 500:$3.6802
  • 250:$4.1014
LMG1210RVRT
DISTI # V39:1801_23157708		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
    LMG1210RVRT
    DISTI # V36:1790_23157708    		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
      LMG1210RVRT
      DISTI # V72:2272_23157708      		1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time0
        LMG1210RVRT
        DISTI # LMG1210RVRT        		GaN Driver with Adjustable Dead Time Half-Bridge Dual-Channel 200V 1.5A 19-Pin WQFN T/R - Tape and Reel (Alt: LMG1210RVRT)
        RoHS: Compliant
        Min Qty: 250
        Container: Reel        		Americas - 0
        • 2500:$2.6900
        • 1500:$2.7900
        • 1000:$2.8900
        • 500:$2.9900
        • 250:$3.1900
        XLMG1210RVRT
        DISTI # XLMG1210RVRT        		GaN Driver with Adjustable Dead Time Half-Bridge Dual-Channel 200V 1.5A 19-Pin WQFN T/R - Tape and Reel (Alt: XLMG1210RVRT)
        RoHS: Not Compliant
        Min Qty: 250
        Container: Reel        		Americas - 0
          LMG1210RVRT200V, 1.5A/3A Half bridge MOSFET and GaN FET driver with adjustable dead-time1230
          • 1000:$2.5200
          • 750:$2.5700
          • 500:$2.9700
          • 250:$3.4100
          • 100:$3.6600
          • 25:$4.0800
          • 10:$4.3700
          • 1:$4.8600
          LMG1210RVRT
          DISTI # 595-LMG1210RVRT          		Gate Drivers EGAN FET 200V HALF-BRIDGE DRIVER
          RoHS: Compliant          		1320
          • 1:$5.8700
          • 10:$5.2800
          • 100:$4.3200
          • 250:$4.0500
          • 500:$3.6800
          • 1000:$3.1000
          • 2500:$2.9400
          Imagen Parte # Descripción
          LT6376IMS#PBF

          Mfr.#: LT6376IMS#PBF

          OMO.#: OMO-LT6376IMS-PBF

          		 Differential Amplifiers 230V Common Mode V G = 10 Diff Amp
          LTC3777ELXE#PBF

          Mfr.#: LTC3777ELXE#PBF

          OMO.#: OMO-LTC3777ELXE-PBF

          		 Switching Controllers 150V VIN and VOUT Synchronous 4-Switch Buck-Boost Controller + 150V Switching Bias Supply
          OPA320AQDBVRQ1

          Mfr.#: OPA320AQDBVRQ1

          OMO.#: OMO-OPA320AQDBVRQ1

          		 Precision Amplifiers Automotive Qualified Precision, Zero-Crossover, 20MHz, 0.9pA Ib, RRIO, CMOS Operational Amplifier 5-SOT-23 -40 to 125
          22201C106MAT2A

          Mfr.#: 22201C106MAT2A

          OMO.#: OMO-22201C106MAT2A

          		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 10uF X7R 2220 20% Tol HIGH CV
          GRM188R6YA106MA73D

          Mfr.#: GRM188R6YA106MA73D

          OMO.#: OMO-GRM188R6YA106MA73D

          		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 10uF 35volts *Derate Voltage/Temp
          901-10510-1

          Mfr.#: 901-10510-1

          OMO.#: OMO-901-10510-1-AMPHENOL-RF

          		 SMA STRAIGHT END LAUNCH JACK,
          OPA320AQDBVRQ1

          Mfr.#: OPA320AQDBVRQ1

          OMO.#: OMO-OPA320AQDBVRQ1-TEXAS-INSTRUMENTS

          		 IC OP AMP GP RR 20MHZ 5-SOT-23
          22201C106MAT2A

          Mfr.#: 22201C106MAT2A

          OMO.#: OMO-22201C106MAT2A-AVX

          		 Cap Ceramic 10uF 100V X7R 20% Pad SMD 2220 125C T/R
          GRM188R6YA106MA73D

          Mfr.#: GRM188R6YA106MA73D

          OMO.#: OMO-GRM188R6YA106MA73D-MURATA-ELECTRONICS

          		 Cap Ceramic 10uF 35V X5R 20% Pad SMD 0603 85C T/R
          XAL1510-153MED

          Mfr.#: XAL1510-153MED

          OMO.#: OMO-XAL1510-153MED-1190

          		 Fixed Inductors 15uH 20% 18A 12.4mOhms AEC-Q200
          Disponibilidad
          Valores:
          Available
          En orden:
          1984
          Ingrese la cantidad:
          El precio actual de LMG1210RVRT es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          5,87 US$
          5,87 US$
          10
          5,28 US$
          52,80 US$
          100
          4,32 US$
          432,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
          Empezar con
          Nuevos productos
          More Newest Products
          Top