OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

HBDM60V600W-7

HBDM60V600W-7
Mfr. #:
HBDM60V600W-7
Fabricante:
Diodes Incorporated
Descripción:
Bipolar Transistors - BJT 200mW Half H-Bridge
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HBDM60V600W-7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HBDM60V600W-7 DatasheetHBDM60V600W-7 Datasheet (P4-P6)HBDM60V600W-7 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-363-6
Polaridad del transistor:
NPN, PNP
Configuración:
Doble
Voltaje colector-emisor VCEO Max:
- 60 V, 65 V
Colector- Voltaje base VCBO:
- 60 V, 80 V
Emisor- Voltaje base VEBO:
- 5.5 V, 6 V
Voltaje de saturación colector-emisor:
- 0.5 V
Corriente máxima del colector de CC:
0.5 A
Producto de ganancia de ancho de banda fT:
100 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
HBDM60
Ganancia de corriente CC hFE Max:
300
Altura:
1 mm
Longitud:
2.2 mm
Embalaje:
Carrete
Ancho:
1.35 mm
Marca:
Diodos incorporados
Corriente continua del colector:
- 600 mA, 500 mA
Colector de CC / Ganancia base hfe Min:
50
Pd - Disipación de energía:
200 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
3000
Subcategoría:
Transistores
Unidad de peso:
0.000212 oz
Tags
HBD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans GP BJT NPN/PNP 65V/60V 0.5A/0.6A 6-Pin SOT-363 T/R
***nsix Microsemi
Small Signal Bipolar Transistor, 0.5A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
HBDM60V600W Series 60/65 V 600/500 mA SMT NPN/PNP Epitaxial Transistor - SOT-363
***ure Electronics
MMDT2227 Series NPN/PNP 40 V 200 mW Small Signal Transistor SMT - SOT-363
*** Source Electronics
TRANS NPN/PNP 40V/60V SOT363 / Trans GP BJT NPN/PNP 40V 0.6A 200mW 6-Pin SOT-363 T/R
***icontronic
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***(Formerly Allied Electronics)
Transistor NPN/PNP 40/60V 0.6A SOT363-6 | Diodes Inc MMDT2227-7-F
***ment14 APAC
Transistor, NPN, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation
***nell
TRANSISTOR, NPN, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 1V; Current Ic Continuous a Max: 600mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
***ca Corp
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon
***p One Stop Global
Trans GP BJT PNP 60V 0.6A 200mW Automotive 6-Pin SOT-363 T/R
***ure Electronics
MMDT2907A Series Dual PNP 60 V 200 mW Small Signal Transistor SMT - SOT-363
***(Formerly Allied Electronics)
Transistor Dual PNP 60V 0.6A SOT363-6 | Diodes Inc MMDT2907A-7-F
***eco
IC,MMDT2907A-7-F,BIPOLAR TRANS ISTOR DUAL PNP SOT-363 ROHS 3
***ment14 APAC
Transistor, PNP/PNP, SOT363; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:200mW; DC
***ark
Transistor, Pnp, Dual, -60V, -600Ma, 200Mw, Sot-363; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:60V; Continuous Collector Current Npn:-; Continuous Collector Current Pnp:600Marohs Compliant: Yes |Diodes Inc. MMDT2907A-7-F
***nell
TRANSISTOR, PNP/PNP, SOT363; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Power Dissipation Pd: 200mW; DC Collector Current: -600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -1.6V; Current Ic Continuous a Max: -600mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
***et
Trans GP BJT PNP 60V 0.6A 6-Pin SOT-363 T/R
***i-Key
TRANS PNP 60V 0.6A SOT363
***des Inc SCT
Multi-Chip, -55 to 150 °C, RoHS
***p One Stop
Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin UMT T/R
***SIT Distribution GmbH
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
UMD2N Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - SC-88
***ark
Digital Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:22Kohm; Resistor Ratio, R1 / R2:- Rohs Compliant: Yes
***nell
TRANSISTOR DUAL UM6 PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMD2N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 56hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 56; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
***ponent Sense
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
***ical
Trans Digital BJT NPN 50V 100mA 150mW 6-Pin UMT T/R
***ment14 APAC
Transistor DUAL UM6 NPN/NPN; Digital Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:100mA;
***ark
Transistor Dual, Npn/npn, Um6; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm; No. Of Pins:6 Pin Rohs Compliant: Yes
***nell
TRANSISTOR DUAL UM6 NPN/NPN; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMH1N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 56hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 56; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
***et
Trans Digital BJT PNP 50V 0.1A 6-Pin US Embossed T/R
*** Electronics
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
*** Services
CoC and 2-years warranty / RFQ for pricing
***el Electronic
SIDACTOR BIDIR 6V 150A DO-214AA
Parte # Mfg. Descripción Valores Precio
HBDM60V600W-7
DISTI # V72:2272_06702672		Zetex / Diodes IncTrans GP BJT NPN/PNP 65V/60V 0.5A/0.6A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant		0
    HBDM60V600W-7
    DISTI # V36:1790_06702672    		Zetex / Diodes IncTrans GP BJT NPN/PNP 65V/60V 0.5A/0.6A Automotive 6-Pin SOT-363 T/R
    RoHS: Compliant    		0
      HBDM60V600W-7
      DISTI # HBDM60V600WDICT-ND      		Diodes IncorporatedTRANS NPN/PNP 65V/60V SOT363
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		13814In Stock
      • 1000:$0.1168
      • 500:$0.1557
      • 100:$0.2076
      • 10:$0.3050
      • 1:$0.3800
      HBDM60V600W-7
      DISTI # HBDM60V600WDIDKR-ND      		Diodes IncorporatedTRANS NPN/PNP 65V/60V SOT363
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		13814In Stock
      • 1000:$0.1168
      • 500:$0.1557
      • 100:$0.2076
      • 10:$0.3050
      • 1:$0.3800
      HBDM60V600W-7
      DISTI # HBDM60V600WDITR-ND      		Diodes IncorporatedTRANS NPN/PNP 65V/60V SOT363
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		12000In Stock
      • 30000:$0.0840
      • 15000:$0.0914
      • 6000:$0.0977
      • 3000:$0.1040
      HBDM60V600W-7
      DISTI # HBDM60V600W-7      		Diodes IncorporatedTrans GP BJT NPN/PNP 65V/60V 0.5A/0.6A 6-Pin SOT-363 T/R - Tape and Reel (Alt: HBDM60V600W-7)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 9000
      • 30000:$0.0759
      • 18000:$0.0769
      • 12000:$0.0809
      • 6000:$0.0849
      • 3000:$0.0899
      HBDM60V600W-7
      DISTI # HBDM60V600W-7      		Diodes IncorporatedTrans GP BJT NPN/PNP 65V/60V 0.5A/0.6A 6-Pin SOT-363 T/R (Alt: HBDM60V600W-7)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 30000:€0.0819
      • 18000:€0.0879
      • 12000:€0.0999
      • 6000:€0.1069
      • 3000:€0.1479
      HBDM60V600W-7
      DISTI # HBDM60V600W-7      		Diodes IncorporatedTrans GP BJT NPN/PNP 65V/60V 0.5A/0.6A 6-Pin SOT-363 T/R (Alt: HBDM60V600W-7)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Asia - 0
      • 150000:$0.0769
      • 75000:$0.0790
      • 30000:$0.0811
      • 15000:$0.0822
      • 9000:$0.0845
      • 6000:$0.0882
      • 3000:$0.0923
      HBDM60V600W-7
      DISTI # 621-HBDM60V600W-7      		Diodes IncorporatedBipolar Transistors - BJT 200mW Half H-Bridge
      RoHS: Compliant      		19715
      • 1:$0.3700
      • 10:$0.2800
      • 100:$0.1520
      • 1000:$0.1140
      • 3000:$0.0980
      • 9000:$0.0920
      Imagen Parte # Descripción
      LM358QT

      Mfr.#: LM358QT

      OMO.#: OMO-LM358QT

      		 Operational Amplifiers - Op Amps Low Power DUAL OP 100 dB 1.1MHz 20nA
      ZHB6792TA

      Mfr.#: ZHB6792TA

      OMO.#: OMO-ZHB6792TA

      		 Bipolar Transistors - BJT H-Bridge-70V
      CZRQR3V3B-HF

      Mfr.#: CZRQR3V3B-HF

      OMO.#: OMO-CZRQR3V3B-HF

      		 Zener Diodes 0.125W, VR=3.3V
      TPS61046YFFT

      Mfr.#: TPS61046YFFT

      OMO.#: OMO-TPS61046YFFT

      		 Switching Voltage Regulators 28V Output Volt Boost Converter
      EG1257

      Mfr.#: EG1257

      OMO.#: OMO-EG1257

      		 Slide Switches SPDT SMT SLIDE
      LM358QT

      Mfr.#: LM358QT

      OMO.#: OMO-LM358QT-STMICROELECTRONICS

      		 IC OPAMP GP 1.1MHZ 8DFN
      EG1257

      Mfr.#: EG1257

      OMO.#: OMO-EG1257-E-SWITCH

      		 Slide Switches SPDT SMT SLIDE
      70555-0046

      Mfr.#: 70555-0046

      OMO.#: OMO-70555-0046-410

      		 Headers & Wire Housings 12P TRI-PEG HEADER
      TPS61046YFFT

      Mfr.#: TPS61046YFFT

      OMO.#: OMO-TPS61046YFFT-TEXAS-INSTRUMENTS

      		 IC REG LED DRIVER DIM 6DSBGA
      ZHB6792TA

      Mfr.#: ZHB6792TA

      OMO.#: OMO-ZHB6792TA-DIODES

      		 TRANS 2NPN/2PNP 70V 1A SOT223
      Disponibilidad
      Valores:
      14
      En orden:
      1997
      Ingrese la cantidad:
      El precio actual de HBDM60V600W-7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,37 US$
      0,37 US$
      10
      0,28 US$
      2,80 US$
      100
      0,15 US$
      15,20 US$
      1000
      0,11 US$
      114,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
      Empezar con
      Nuevos productos
      More Newest Products
      Top