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SIHB24N65E-GE3

SIHB24N65E-GE3
Mfr. #:
SIHB24N65E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB24N65E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB24N65E-GE3 DatasheetSIHB24N65E-GE3 Datasheet (P4-P6)SIHB24N65E-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SIHB24N65E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
700 V
Id - Corriente de drenaje continua:
24 A
Rds On - Resistencia de la fuente de drenaje:
145 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
81 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
250 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
69 ns
Tipo de producto:
MOSFET
Hora de levantarse:
84 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
70 ns
Tiempo típico de retardo de encendido:
24 ns
Unidad de peso:
0.050717 oz
Tags
SIHB24, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E-Series N-Channel 650 V 0.145 O 122 nC Surface Mount Power Mosfet - D2PAK
***et
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHB24N65E-GE3
DISTI # 26884872		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		272
  • 22:$3.6462
SIHB24N65E-GE3
DISTI # SIHB24N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 24A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		992In Stock
  • 3000:$2.9745
  • 1000:$3.1311
  • 100:$4.3612
  • 25:$5.0320
  • 10:$5.3230
  • 1:$5.9300
SIHB24N65E-GE3
DISTI # V36:1790_09219020		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000:$2.9040
SIHB24N65E-GE3
DISTI # SIHB24N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB24N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$2.7308
  • 6000:$2.8063
  • 4000:$2.8862
  • 2000:$3.0085
  • 1000:$3.1004
SIHB24N65E-GE3
DISTI # SIHB24N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK (Alt: SIHB24N65E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.1900
  • 100:€2.2900
  • 500:€2.2900
  • 50:€2.3900
  • 25:€2.6900
  • 10:€3.2900
  • 1:€4.1900
SIHB24N65E-GE3
DISTI # 68W7035		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7035)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 500:$4.4500
  • 250:$4.9400
  • 100:$5.0900
  • 50:$5.4500
  • 25:$5.8300
  • 10:$6.1900
  • 1:$7.4600
SIHB24N65E-GE3
DISTI # 68W7036		Vishay IntertechnologiesMOSFET, N CH, 650V, 24A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 20000:$2.6200
  • 12000:$2.6700
  • 8000:$2.7700
  • 4000:$2.9900
  • 2000:$3.2000
  • 1:$3.3500
SIHB24N65E-GE3
DISTI # 68W7035		Vishay IntertechnologiesMOSFET, N CHANNEL, 650V, 24A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes272
  • 1:$2.3700
  • 10:$2.3700
  • 25:$2.3700
  • 50:$2.3700
  • 100:$2.3700
  • 250:$2.3700
SIHB24N65E-GE3
DISTI # 78-SIHB24N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		2950
  • 1:$5.9600
  • 10:$4.9400
  • 100:$4.0600
  • 250:$3.9400
  • 500:$3.5300
  • 1000:$2.9800
  • 2000:$2.8300
SIHB24N65E-E3
DISTI # 781-SIHB24N65E-E3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1000:$2.9800
  • 2000:$2.8300
SIHB24N65E-GE3
DISTI # 2283632		Vishay IntertechnologiesMOSFET, N-CH, 650V, 24A, D2PAK
RoHS: Compliant		1258
  • 3000:$4.5000
  • 1000:$4.7200
  • 100:$6.5800
  • 25:$7.5900
  • 10:$8.0300
  • 1:$8.9400
SIHB24N65E-GE3
DISTI # 2283632		Vishay IntertechnologiesMOSFET, N-CH, 650V, 24A, D2PAK1269
  • 500:£2.8200
  • 250:£3.0400
  • 100:£3.1300
  • 10:£3.8100
  • 1:£5.0700
SIHB24N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
  • 10:$3.8640
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Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de SIHB24N65E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,96 US$
5,96 US$
10
4,94 US$
49,40 US$
100
4,06 US$
406,00 US$
250
3,94 US$
985,00 US$
500
3,53 US$
1 765,00 US$
1000
2,98 US$
2 980,00 US$
2000
2,83 US$
5 660,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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