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IPP040N06NAKSA1

IPP040N06NAKSA1
Mfr. #:
IPP040N06NAKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 60V 80A TO220-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP040N06NAKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPP040N06NAKSA1 DatasheetIPP040N06NAKSA1 Datasheet (P4-P6)IPP040N06NAKSA1 Datasheet (P7-P9)
ECAD Model:
Más información:
IPP040N06NAKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
80 A
Rds On - Resistencia de la fuente de drenaje:
3.6 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
44 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
107 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Serie:
OptiMOS 5
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
60 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
16 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
19 ns
Parte # Alias:
IPP040N06N IPP4N6NXK SP000959820
Unidad de peso:
0.211644 oz
Tags
IPP040, IPP04, IPP0, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220 Tube
***Components
MOSFET N-Channel 60V 80A OptiMOS TO263
***i-Key
MOSFET N-CH 60V 20A TO220-3
***ronik
N-CH 60V 80A 4mOhm TO220-3
***p One Stop Global
OPTIMOSTM POWER-TRANSISTOR
***ark
Mosfet, N-Ch, 60V, 80A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0036Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:107W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 60V, 80A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0036ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:107W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Parte # Mfg. Descripción Valores Precio
IPP040N06NAKSA1
DISTI # V99:2348_06383355		Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		206
  • 10000:$0.7310
  • 5000:$0.7571
  • 2500:$0.7836
  • 1000:$0.8292
  • 500:$0.9505
  • 100:$1.0758
  • 10:$1.3153
  • 1:$1.5323
IPP040N06NAKSA1
DISTI # IPP040N06NAKSA1-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		219In Stock
  • 1000:$0.9570
  • 500:$1.1550
  • 100:$1.4850
  • 10:$1.8480
  • 1:$2.0500
IPP040N06NAKSA1
DISTI # 30313608		Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		269
  • 500:$1.0176
  • 100:$1.1520
  • 16:$1.4400
IPP040N06NAKSA1
DISTI # 26197615		Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		206
  • 100:$1.0758
  • 10:$1.3153
IPP040N06NAKSA1
DISTI # IPP040N06NAKSA1		Infineon Technologies AGMV POWER MOS - Rail/Tube (Alt: IPP040N06NAKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.6909
  • 2000:$0.6659
  • 3000:$0.6419
  • 5000:$0.6199
  • 10000:$0.6089
IPP040N06NAKSA1
DISTI # 12AC9723		Infineon Technologies AGMOSFET, N-CH, 60V, 80A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes500
  • 1:$1.7700
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0600
IPP040N06N
DISTI # 726-IPP040N06N		Infineon Technologies AGMOSFET N-Ch 60V 80A TO220-3
RoHS: Compliant		749
  • 1:$1.7000
  • 10:$1.4400
  • 100:$1.1600
  • 500:$1.0100
IPP040N06NAKSA1
DISTI # 726-IPP040N06NAKSA1		Infineon Technologies AGMOSFET N-Ch 60V 80A TO220-3
RoHS: Compliant		559
  • 1:$1.7700
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0600
IPP040N06NAKSA1Infineon Technologies AGPower Field-Effect Transistor, 20A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		300
  • 1000:$0.7600
  • 500:$0.8000
  • 100:$0.8400
  • 25:$0.8700
  • 1:$0.9400
IPP040N06NAKSA1
DISTI # 8922144P		Infineon Technologies AGMOSFET N-CHANNEL 60V 80A OPTIMOS TO-220, TU55
  • 10:£1.0780
  • 25:£1.0440
  • 50:£1.0100
  • 100:£0.8700
IPP040N06NAKSA1
DISTI # 8922144		Infineon Technologies AGMOSFET N-CHANNEL 60V 80A OPTIMOS TO-220, PK130
  • 5:£1.3760
  • 10:£1.0780
  • 25:£1.0440
  • 50:£1.0100
  • 100:£0.8700
IPP040N06NAKSA1
DISTI # 2709863		Infineon Technologies AGMOSFET, N-CH, 60V, 80A, TO-220
RoHS: Compliant		500
  • 5:£1.0900
  • 25:£1.0200
  • 100:£0.8790
  • 250:£0.8450
  • 500:£0.8100
IPP040N06NAKSA1
DISTI # 2709863		Infineon Technologies AGMOSFET, N-CH, 60V, 80A, TO-220
RoHS: Compliant		500
  • 1:$3.2700
  • 10:$2.9500
  • 100:$2.3700
  • 500:$1.8500
  • 1000:$1.5300
IPP040N06NAKSA1
DISTI # C1S322000336366		Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		206
  • 100:$1.0758
  • 10:$1.3153
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Disponibilidad
Valores:
466
En orden:
2449
Ingrese la cantidad:
El precio actual de IPP040N06NAKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,76 US$
1,76 US$
10
1,50 US$
15,00 US$
100
1,20 US$
120,00 US$
500
1,05 US$
525,00 US$
1000
0,87 US$
870,00 US$
2500
0,81 US$
2 027,50 US$
5000
0,78 US$
3 905,00 US$
10000
0,75 US$
7 500,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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