2SK3524-01

Mfr. #:: 2SK3524-01
Fabricante:: Fuji Electric Co Ltd
Descripción:: MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 0.93Ohm, ID +/-8A, TO-220AB, PD 135W, VGS +/-30
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: 2SK3524-01 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Tags: 2SK352, 2SK35, 2SK3, 2SK

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK3524-01 Descripción

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 600V,RDS(ON) 0.93Ohm,ID+/-8A,TO-220AB,PD 135W,VGS+/-30V

***emi: N-Channel Power MOSFET, QFET®, 400 V, 10.5 A, 530 mΩ, TO-220

*** Source Electronics: Trans MOSFET N-CH 400V 10.5A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 400V 10.5A TO-220

***ure Electronics: N-Channel 400 V 530 mOhm 35 nC Flange Mount Mosfet - TO-220

***nell: MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.5A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 0.43ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd:

***r Electronics: Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***emi: Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220

***et: Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Rail

***r Electronics: Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):650mohm; Rds(on) Test Voltage Vgs:10V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:9A; Package / Case:TO-220; Power Dissipation Pd:135W; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

***(Formerly Allied Electronics): IRF840APBF N-channel MOSFET Transistor; 8 A; 500 V; 3-Pin TO-220AB

***th Star Micro: Transistor MOSFET N-CH 500V 8A 3-Pin (3+Tab) TO-220AB

***ure Electronics: N-Channel 500 V 0.85 O 38 nC Flange Mount Power Mosfet - TO-220-3

***enic: 500V 8A 850m´Î@10V4.8A 125W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 500V, 8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***(Formerly Allied Electronics): IRFB11N50APBF N-channel MOSFET Transistor; 11 A; 500 V; 3-Pin TO-220AB

***ure Electronics: Single N-Channel 500 V 0.52 Ohms Flange Mount Power Mosfet - TO-220-3

*** Source Electronics: Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 500V 11A TO-220AB

***ment14 APAC: MOSFET, N, 500V, 11A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:500V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:44A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***(Formerly Allied Electronics): IRF840LCPBF N-channel MOSFET Transistor; 8 A; 500 V; 3-Pin TO-220AB

***ure Electronics: Single N-Channel 500 V 0.85 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB

***roFlash: Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: N CHANNEL MOSFET, 500V, 8A TO-220AB; Tra; N CHANNEL MOSFET, 500V, 8A TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; MSL:-

***ure Electronics: Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***(Formerly Allied Electronics): MOSFET, 150V, 23A, 90 mOhm, 37 nC Qg, TO-220AB

***Yang: Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:150V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:136W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23A; Package / Case:TO-220AB; Power Dissipation Pd:136W; Power Dissipation Pd:136W; Pulse Current Idm:92A; Voltage Vds Typ:150V; Voltage Vgs th Max:5.5V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Market price

Parte #	Mfg.	Descripción	Valores	Precio
2SK3524-01 DISTI # 70212489	Fuji Electric Co Ltd	MOSFET,Power,N-Ch,VDSS 600V,RDS(ON) 0.93Ohm,ID+/-8A,TO-220AB,PD 135W,VGS+/-30V RoHS: Not Compliant	0	500:$1.0400
2SK3524-01 DISTI # FE0000000000463	Fuji Electric Co Ltd	Power Field-Effect Transistor, 8AI(D),600V,1.2ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant	0 in Stock0 on Order	500:$0.8857 1:$0.9538
2SK3524-01-S25PP-P DISTI # FE0000000003729	Fuji Electric Co Ltd	MOSFET RoHS: Compliant	0 in Stock0 on Order

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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

2SK352 36
2SK35 238
2SK3 1303
2SK 4442

2SK3524-01

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes