IS65WV1288BLL-55HLA1-TR

IS65WV1288BLL-55HLA1-TR
Mfr. #:
IS65WV1288BLL-55HLA1-TR
Fabricante:
ISSI
Descripción:
SRAM 1M (128Kx8) 55ns Async SRAM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IS65WV1288BLL-55HLA1-TR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IS65WV1288BLL-55HLA1-TR DatasheetIS65WV1288BLL-55HLA1-TR Datasheet (P4-P6)IS65WV1288BLL-55HLA1-TR Datasheet (P7-P9)IS65WV1288BLL-55HLA1-TR Datasheet (P10-P12)IS65WV1288BLL-55HLA1-TR Datasheet (P13-P15)
ECAD Model:
Más información:
IS65WV1288BLL-55HLA1-TR más información
Atributo del producto
Valor de atributo
Fabricante:
ISSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
1 Mbit
Tiempo de acceso:
55 ns
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.5 V
Corriente de suministro - Máx .:
8 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
sTSOP-32
Embalaje:
Carrete
Velocidad de datos:
SDR
Serie:
IS65WV1288BLL
Escribe:
Asincrónico
Marca:
ISSI
Numero de puertos:
1
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
2000
Subcategoría:
Memoria y almacenamiento de datos
Tags
IS65WV1288, IS65WV128, IS65WV12, IS65WV1, IS65W, IS65, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
SRAM Chip Async Single 3.3V 1M-bit 128K x 8 55ns Automotive 32-Pin STSOP-I T/R
***ark
1Mb, Low Power/Power Saver,Async,128K x 8,55ns,2.5v-3.6v,32 Pin sTSOP I (8x13.4mm), RoHS, Automotive temp
***i-Key
IC SRAM 1MBIT PARALLEL 32STSOP I
Ultra-Low Power SRAM
ISSI ultra-low power SRAM devices offer significant power savings compared to the previous versions and feature the lowest operating current in the industry. ISSI ultra-low power SRAM devices feature high-speed access time (45ns, 55ns and 70ns) and CMOS low power operation (12mW typical operating current and 4µW typical CMOS standby). These ultra-low power SRAMs also provide fully static operation with no clock or refresh required and are ideal for industrial and automotive temperature support.
Asynchronous SRAMs
ISSI Asynchronous SRAMs are offered in x8, x16, and x32 configurations. These devices are available in high-speed, low-power, high-speed/low-power, PowerSaver lower power and automotive versions with long-term support offered by ISSI's commitment to continued development of these products. With a wide offering of densities (64K to 16M), speeds (8ns to 55ns), supply voltages (1.65V to 5V), temperature ranges (commercial, industrial and automotive), and packages (BGA, SOJ, SOP, sTSOP, and TSOP) ISSI offers just about any asynchronous SRAM that an engineer could need for their latest design.Learn More
Imagen Parte # Descripción
IS65WV1288BLL-55HLA1

Mfr.#: IS65WV1288BLL-55HLA1

OMO.#: OMO-IS65WV1288BLL-55HLA1

SRAM 1M (128Kx8) 55ns Async SRAM
IS65WV1288BLL-55HLA1-TR

Mfr.#: IS65WV1288BLL-55HLA1-TR

OMO.#: OMO-IS65WV1288BLL-55HLA1-TR

SRAM 1M (128Kx8) 55ns Async SRAM
IS65WV1288BLL-55HLA1

Mfr.#: IS65WV1288BLL-55HLA1

OMO.#: OMO-IS65WV1288BLL-55HLA1-INTEGRATED-SILICON-SOLUTION

SRAM 1M (128Kx8) 55ns Async SRAM
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de IS65WV1288BLL-55HLA1-TR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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