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PD20015-E

PD20015-E
Mfr. #:
PD20015-E
Fabricante:
STMicroelectronics
Descripción:
RF MOSFET Transistors N-Ch, 13.6V 15W LDMOST family
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PD20015-E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD20015-E DatasheetPD20015-E Datasheet (P4-P6)PD20015-E Datasheet (P7-P9)PD20015-E Datasheet (P10-P12)PD20015-E Datasheet (P13-P15)PD20015-E Datasheet (P16)
ECAD Model:
Más información:
PD20015-E más información PD20015-E Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
7 A
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Ganar:
11 dB
Potencia de salida:
15 W
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerSO-10RF-Formed-4
Embalaje:
Tubo
Configuración:
Único
Altura:
3.5 mm
Longitud:
7.5 mm
Frecuencia de operación:
2 GHz
Serie:
PD20015-E
Escribe:
RF Power MOSFET
Ancho:
9.4 mm
Marca:
STMicroelectronics
Modo de canal:
Mejora
Sensible a la humedad:
Yes
Pd - Disipación de energía:
79 W
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
400
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
15 V
Unidad de peso:
0.105822 oz
Tags
PD20015, PD2001, PD200, PD20, PD2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel RF Power Transistor LdmoST Operates at 13.6V at Frequencies up to 1GHz
***p One Stop
Trans RF MOSFET N-CH 40V 7A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics SCT
RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs
***icroelectronics
15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ark
RF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF; Drain Source Voltage Vds:40V; Continuous Drain Current Id:7A; Power Dissipation:79W; Operating Frequency Min:-; Operating Frequency Max:2GHz; No. of Pins:3Pins; Operating Temperature Max:165°C RoHS Compliant: Yes
***ical
Trans RF MOSFET N-CH 40V 8A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
*** Source Electronics
RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
***ical
Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Straight lead) Tube
***icroelectronics
35W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package
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Power Field-Effect Transistor, 8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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8 A 40 V N-CHANNEL Si POWER MOSFET
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P-Channel PowerTrench® MOSFET, -40V, -23A, 27mΩ
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Single P-Channel 40 V 69 W 27 nC Silicon Surface Mount Mosfet - TO-252-3
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***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
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Transistor MOSFET Array Dual N-CH 40V 8A 8-Pin SOIC T/R
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DUAL N-CH MOSFET SO-8 40V 16MOHM @ 10V- LEAD(PB) AND HALOGEN FREE
***ark
COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):0.019ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,NN CH,DIODE,40V,8A,8-SOIC; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Drain Source Voltage Vds:40V; Module Configuration:Dual; On Resistance Rds(on):0.013ohm; Power Dissipation Pd:2W
***et
Transistor MOSFET Array Dual N-CH 40V 8A 8-Pin SOIC T/R
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Dual N-Channel 40 V 0.016 O 85 nC Surface Mount Mosfet - SOIC-8
***essParts.Net
VISHAY SI4904DY-T1-E3 / MOSFET N-CH DUAL 40V 8A 8-SOICVISHA
***ark
Dual N Channel Mosfet, 40V, Soic, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:16Vrohs Compliant: No
Parte # Mfg. Descripción Valores Precio
PD20015-E
DISTI # 497-8802-5-ND		STMicroelectronicsTRANS RF PWR N-CH POWERSO-10RF
RoHS: Compliant
Min Qty: 1
Container: Tube		387In Stock
  • 500:$16.7532
  • 100:$18.4528
  • 50:$20.6380
  • 1:$23.4300
PD20015-E
DISTI # PD20015-E		STMicroelectronicsTrans MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube (Alt: PD20015-E)
RoHS: Compliant
Min Qty: 400
Container: Tube		Asia - 0
  • 400:$18.9300
  • 800:$18.0286
  • 1200:$17.2091
  • 2000:$16.4609
  • 4000:$15.7750
  • 10000:$15.3486
  • 20000:$14.9447
PD20015-E
DISTI # PD20015-E		STMicroelectronicsTrans MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD20015-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$18.1900
  • 800:$17.2900
  • 1600:$16.4900
  • 2400:$15.7900
  • 4000:$15.4900
PD20015-E
DISTI # 45AC7467		STMicroelectronicsTrans MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube - Bulk (Alt: 45AC7467)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$23.4300
  • 5:$23.1900
  • 10:$21.6100
  • 25:$20.6400
  • 50:$19.5500
  • 100:$18.4600
  • 250:$17.6100
PD20015-E
DISTI # 45AC7467		STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF,Drain Source Voltage Vds:40V,Continuous Drain Current Id:7A,Power Dissipation Pd:79W,Operating Frequency Min:-,Operating Frequency Max:2GHz,RF Transistor Case:PowerSO-10RF,Product Range:-RoHS Compliant: Yes100
  • 1:$23.4300
  • 5:$23.1900
  • 10:$21.6100
  • 25:$20.6400
  • 50:$19.5500
  • 100:$18.4600
  • 250:$17.6100
PD20015-E
DISTI # 511-PD20015-E		STMicroelectronicsRF MOSFET Transistors N-Ch, 13.6V 15W LDMOST family
RoHS: Compliant		351
  • 1:$23.4300
  • 5:$23.1900
  • 10:$21.6100
  • 25:$20.6400
  • 100:$18.4600
  • 250:$17.6100
PD20015-E
DISTI # PD20015-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 400:$17.6100
  • 500:$16.6800
  • 1000:$15.8300
PD20015-E
DISTI # 2807338		STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF
RoHS: Compliant		169
  • 1:$37.3500
  • 50:$32.9000
  • 100:$29.4200
  • 500:$26.7100
PD20015-E
DISTI # 2807338		STMicroelectronicsRF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF
RoHS: Compliant		169
  • 1:£18.0600
  • 5:£17.8700
  • 10:£15.9000
  • 50:£15.0600
  • 100:£14.2200
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Disponibilidad
Valores:
252
En orden:
2235
Ingrese la cantidad:
El precio actual de PD20015-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
23,43 US$
23,43 US$
5
23,19 US$
115,95 US$
10
21,61 US$
216,10 US$
25
20,64 US$
516,00 US$
100
18,46 US$
1 846,00 US$
250
17,61 US$
4 402,50 US$
500
16,76 US$
8 380,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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