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STW25NM60ND

STW25NM60ND
Mfr. #:
STW25NM60ND
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 600V, 21A FDMesh II
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STW25NM60ND Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
STW25NM60ND más información STW25NM60ND Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
21 A
Rds On - Resistencia de la fuente de drenaje:
160 mOhms
Vgs - Voltaje puerta-fuente:
25 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
160 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
20.15 mm
Longitud:
15.75 mm
Serie:
STB25NM60N
Tipo de transistor:
1 N-Channel
Ancho:
5.15 mm
Marca:
STMicroelectronics
Otoño:
40 ns
Tipo de producto:
MOSFET
Hora de levantarse:
30 ns
Cantidad de paquete de fábrica:
600
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
50 ns
Tiempo típico de retardo de encendido:
60 ns
Unidad de peso:
1.340411 oz
Tags
STW25NM60ND, STW25NM60N, STW25NM60, STW25NM6, STW25NM, STW25N, STW25, STW2, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Power Mosfet, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
***ure Electronics
Single N-Channel 600 V 0.16 Ohm 29 nC 160 W Silicon Flange Mount Mosfet TO-247-3
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 600V, 21A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***icroelectronics
N-channel 500 V, 0.090 Ohm, 27 A MDmesh" II Power MOSFET
***r Electronics
Power Field-Effect Transistor, 27A I(D), 500V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 500V, 27A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 27A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 500V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 package
*** Source Electronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 20A TO-247
***ure Electronics
Single N-Channel 600 V 140 W 60 nC MDmesh Through Hole Mosfet - TO-247-3
***ark
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package
***ark
Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-247
*** Source Electronics
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 22A TO-247
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET,N CH,600V,22A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:205W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 23 A, 165 mΩ, TO-247
***ark
SuperFET2 600V 165mohm slow version - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***r Electronics
Power Field-Effect Transistor, 23A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 23A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.132ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.
Parte # Mfg. Descripción Valores Precio
STW25NM60ND
DISTI # 497-8455-5-ND		STMicroelectronicsMOSFET N-CH 600V 21A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		562In Stock
  • 510:$5.9078
  • 120:$7.0512
  • 30:$7.8137
  • 1:$9.5300
STW25NM60ND
DISTI # 511-STW25NM60ND		STMicroelectronicsMOSFET N-channel 600V, 21A FDMesh II
RoHS: Compliant		4
  • 1:$8.2500
  • 10:$7.4600
  • 25:$7.1100
  • 100:$6.1700
  • 250:$5.9000
  • 500:$5.3800
STW25NM60ND
DISTI # STW25NM60ND		STMicroelectronicsN-Ch 600V 21A 160W 0,16R TO247
RoHS: Compliant		0
  • 5:€2.6000
  • 30:€2.2000
  • 120:€2.0000
  • 300:€1.9200
STW25NM60ND
DISTI # 2098388		STMicroelectronicsMOSFET, N CH, 600V, 21A, TO 247
RoHS: Compliant		1
  • 1:£6.6300
  • 10:£5.0200
  • 100:£4.6300
  • 250:£4.4600
  • 500:£4.0300
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Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de STW25NM60ND es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,24 US$
8,24 US$
10
7,45 US$
74,50 US$
25
7,10 US$
177,50 US$
100
6,16 US$
616,00 US$
250
5,89 US$
1 472,50 US$
500
5,37 US$
2 685,00 US$
1000
4,67 US$
4 670,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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