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IRL100HS121

IRL100HS121
Mfr. #:
IRL100HS121
Fabricante:
Infineon Technologies
Descripción:
MOSFET DIFFERENTIATED MOSFETS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRL100HS121 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRL100HS121 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PQFN-6
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
5.1 A
Rds On - Resistencia de la fuente de drenaje:
34 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.1 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
3.7 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
11.5 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
15 S
Otoño:
10.7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
21 ns
Cantidad de paquete de fábrica:
4000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
8.7 ns
Tiempo típico de retardo de encendido:
7.6 ns
Parte # Alias:
SP001592836
Tags
IRL100, IRL10, IRL1, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 100V 5.1A 6-Pin PQFN EP T/R
***ment14 APAC
MOSFET, N-CH, 100V, 11A, 11.5W, PQFN
***ark
Trench >=100V Rohs Compliant: Yes
***ineon
Available in three different voltage classes (60V, 80V and 100V), Infineons new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving. | Summary of Features: Lowest FOM (R DS(on) x Q g/gd); Optimized Q g, C oss, and Q rr for fast switching; Logic level compatibility; Tiny PQFN 2x2mm package | Benefits: Smallest package footprint; Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Telecom; Adapter
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Parte # Mfg. Descripción Valores Precio
IRL100HS121
DISTI # V72:2272_18787593		Infineon Technologies AGDIFFERENTIATED MOSFETS3159
  • 3000:$0.3402
  • 1000:$0.3780
  • 500:$0.4825
  • 250:$0.5154
  • 100:$0.5726
  • 25:$0.6707
  • 10:$0.8198
  • 1:$0.9412
IRL100HS121
DISTI # V36:1790_18787593		Infineon Technologies AGDIFFERENTIATED MOSFETS0
  • 4000000:$0.3125
  • 2000000:$0.3128
  • 400000:$0.3392
  • 40000:$0.3865
  • 4000:$0.3944
IRL100HS121
DISTI # IRL100HS121CT-ND		Infineon Technologies AGMOSFET N-CH 100V 6PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6775In Stock
  • 1000:$0.4353
  • 500:$0.5513
  • 100:$0.6674
  • 10:$0.8560
  • 1:$0.9600
IRL100HS121
DISTI # IRL100HS121DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 6PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6775In Stock
  • 1000:$0.4353
  • 500:$0.5513
  • 100:$0.6674
  • 10:$0.8560
  • 1:$0.9600
IRL100HS121
DISTI # IRL100HS121TR-ND		Infineon Technologies AGMOSFET N-CH 100V 6PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 28000:$0.3568
  • 12000:$0.3606
  • 8000:$0.3747
  • 4000:$0.3944
IRL100HS121
DISTI # 33368673		Infineon Technologies AGDIFFERENTIATED MOSFETS4000
  • 4000:$0.3293
IRL100HS121
DISTI # 26196817		Infineon Technologies AGDIFFERENTIATED MOSFETS3159
  • 19:$0.9412
IRL100HS121
DISTI # IRL100HS121		Infineon Technologies AGTrans MOSFET N-CH 100V 11A 6-Pin PQFN T/R - Tape and Reel (Alt: IRL100HS121)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 4000
  • 40000:$0.3399
  • 24000:$0.3469
  • 16000:$0.3589
  • 8000:$0.3719
  • 4000:$0.3859
IRL100HS121
DISTI # SP001592836		Infineon Technologies AGTrans MOSFET N-CH 100V 11A 6-Pin PQFN T/R (Alt: SP001592836)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 40000:€0.3529
  • 24000:€0.3719
  • 16000:€0.4329
  • 8000:€0.5089
  • 4000:€0.5909
IRL100HS121
DISTI # 93AC7146		Infineon Technologies AGMOSFET, N-CH, 100V, 11A, 11.5W, PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes0
  • 1000:$0.4070
  • 500:$0.5150
  • 250:$0.5490
  • 100:$0.5830
  • 50:$0.6420
  • 25:$0.7010
  • 10:$0.7600
  • 1:$0.8890
IRL100HS121
DISTI # 726-IRL100HS121		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		8572
  • 1:$0.8800
  • 10:$0.7520
  • 100:$0.5770
  • 500:$0.5100
  • 1000:$0.4030
IRL100HS121
DISTI # TMOS1892		Infineon Technologies AGN-CH 100V 11A 42mOhm PQFN2X2
RoHS: Compliant		Stock DE - 90Stock HK - 0Stock US - 0
  • 1:$0.4947
  • 3:$0.4665
  • 9:$0.4382
  • 25:$0.3958
  • 74:$0.3817
IRL100HS121
DISTI # 2986493		Infineon Technologies AGMOSFET, N-CH, 100V, 11A, 11.5W, PQFN3985
  • 500:£0.3700
  • 250:£0.3940
  • 100:£0.4180
  • 10:£0.5960
  • 1:£0.7300
IRL100HS121
DISTI # 2986493		Infineon Technologies AGMOSFET, N-CH, 100V, 11A, 11.5W, PQFN
RoHS: Compliant		0
  • 1000:$0.5260
  • 500:$0.6190
  • 250:$0.6730
  • 100:$0.7270
  • 25:$1.0500
  • 5:$1.1500
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C3M0075120K

Mfr.#: C3M0075120K

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Mfr.#: TMS320F28069PZPQ

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ADUM1401BRWZ-RL

Mfr.#: ADUM1401BRWZ-RL

OMO.#: OMO-ADUM1401BRWZ-RL-ANALOG-DEVICES-INC-ADI

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C3M0075120K

Mfr.#: C3M0075120K

OMO.#: OMO-C3M0075120K-WOLFSPEED

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Disponibilidad
Valores:
Available
En orden:
1991
Ingrese la cantidad:
El precio actual de IRL100HS121 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,88 US$
0,88 US$
10
0,75 US$
7,52 US$
100
0,58 US$
57,70 US$
500
0,51 US$
255,00 US$
1000
0,40 US$
403,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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