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MSC080SMA120J

MSC080SMA120J
Mfr. #:
MSC080SMA120J
Fabricante:
Microchip / Microsemi
Descripción:
MOSFET UNRLS, FG, SIC MOSFET, SOT-227
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MSC080SMA120J Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MSC080SMA120J más información
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1.2 kV
Rds On - Resistencia de la fuente de drenaje:
100 mOhms
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Marca:
Microchip / Microsemi
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1
Subcategoría:
MOSFET
Tags
MSC080S, MSC08, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
Imagen Parte # Descripción
MSC080SMA120J

Mfr.#: MSC080SMA120J

OMO.#: OMO-MSC080SMA120J

 MOSFET UNRLS, FG, SIC MOSFET, SOT-227
MSC080SMA120S

Mfr.#: MSC080SMA120S

OMO.#: OMO-MSC080SMA120S-1190

 Transistor MOSFET N-CH 1200V 35A 3-Pin D3PAK Tube (Alt: MSC080SMA120S)
MSC0805C-39NJ

Mfr.#: MSC0805C-39NJ

OMO.#: OMO-MSC0805C-39NJ-1190

 Nuevo y original
MSC0805C-56NM

Mfr.#: MSC0805C-56NM

OMO.#: OMO-MSC0805C-56NM-1190

 Nuevo y original
MSC0805C-R10J

Mfr.#: MSC0805C-R10J

OMO.#: OMO-MSC0805C-R10J-1190

 Nuevo y original
MSC080SMA120B

Mfr.#: MSC080SMA120B

OMO.#: OMO-MSC080SMA120B-1190

 MOSFET N-CH 1200V TO247
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de MSC080SMA120J es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
48,23 US$
48,23 US$
5
46,97 US$
234,85 US$
10
45,10 US$
451,00 US$
25
43,52 US$
1 088,00 US$
50
41,28 US$
2 064,00 US$
100
38,75 US$
3 875,00 US$
250
36,21 US$
9 052,50 US$
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