SIS402DN-T1-GE3

SIS402DN-T1-GE3
Mfr. #:
SIS402DN-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 30V 35A 1212-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIS402DN-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SIS402DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Serie
SISxxxDN
embalaje
Carrete
Alias ​​de parte
SIJ484DP-T1-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAK-1212-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
3.8 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
15 ns
Hora de levantarse
20 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
35 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
6.4 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
25 ns
Tiempo de retardo de encendido típico
25 ns
Transconductancia directa-Mín.
82 S
Modo de canal
Mejora
Tags
SIS402DN-T1-G, SIS402DN-T, SIS402, SIS40, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Parte # Mfg. Descripción Valores Precio
SIS402DN-T1-GE3
DISTI # V72:2272_07432613
Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 EP T/R
RoHS: Compliant
2900
  • 1000:$0.7690
  • 500:$0.7798
  • 250:$0.8664
  • 100:$0.9627
  • 25:$1.1801
  • 10:$1.1858
  • 1:$1.3435
SIS402DN-T1-GE3
DISTI # SIS402DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 35A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1734In Stock
  • 1000:$1.0021
  • 500:$1.2095
  • 100:$1.5550
  • 10:$1.9350
  • 1:$2.1400
SIS402DN-T1-GE3
DISTI # SIS402DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 35A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1734In Stock
  • 1000:$1.0021
  • 500:$1.2095
  • 100:$1.5550
  • 10:$1.9350
  • 1:$2.1400
SIS402DN-T1-GE3
DISTI # SIS402DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 35A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.9059
SIS402DN-T1-GE3
DISTI # 26703731
Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 EP T/R
RoHS: Compliant
3000
  • 3000:$0.8306
SIS402DN-T1-GE3
DISTI # 30647647
Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 EP T/R
RoHS: Compliant
2900
  • 1000:$0.7690
  • 500:$0.7798
  • 250:$0.8664
  • 100:$0.9627
  • 25:$1.1801
  • 13:$1.1858
SIS402DN-T1-GE3
DISTI # SIS402DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 T/R (Alt: SIS402DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.7179
  • 6000:€0.4899
  • 12000:€0.4219
  • 18000:€0.3889
  • 30000:€0.3619
SIS402DN-T1-GE3
DISTI # SIS402DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 T/R (Alt: SIS402DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIS402DN-T1-GE3
    DISTI # SIS402DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS402DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.5169
    • 6000:$0.5019
    • 12000:$0.4809
    • 18000:$0.4679
    • 30000:$0.4549
    SIS402DN-T1-GE3
    DISTI # 781-SIS402DN-T1-GE3
    Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant
    3780
    • 1:$1.9000
    • 10:$1.5800
    • 100:$1.2200
    • 500:$1.0700
    • 1000:$0.8850
    • 3000:$0.8240
    • 6000:$0.7940
    • 9000:$0.7930
    SIS402DNT1GE3Vishay Intertechnologies 
    RoHS: Compliant
    Europe - 3000
      SIS402DN-T1-GE3
      DISTI # 2478940
      Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A POWERPAK, FUL
      RoHS: Compliant
      0
      • 3000:£0.7470
      SIS402DN-T1-GE3
      DISTI # C1S803601056423
      Vishay IntertechnologiesMOSFETs3000
      • 3000:$0.4580
      SIS402DN-T1-GE3
      DISTI # 2478940
      Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A POWERPAK, FULL REEL
      RoHS: Compliant
      0
      • 3000:$3.3500
      • 6000:$2.5700
      • 12000:$2.0600
      SIS402DN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
      RoHS: Compliant
      Americas -
      • 3000:$0.5140
      • 6000:$0.4860
      • 12000:$0.4710
      • 24000:$0.4640
      Imagen Parte # Descripción
      SIS402DN-T1-GE3

      Mfr.#: SIS402DN-T1-GE3

      OMO.#: OMO-SIS402DN-T1-GE3

      MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
      SIS402DN

      Mfr.#: SIS402DN

      OMO.#: OMO-SIS402DN-1190

      Nuevo y original
      SIS402DN-T1-E3

      Mfr.#: SIS402DN-T1-E3

      OMO.#: OMO-SIS402DN-T1-E3-1190

      Nuevo y original
      SIS402DN-T1-GE3

      Mfr.#: SIS402DN-T1-GE3

      OMO.#: OMO-SIS402DN-T1-GE3-VISHAY

      MOSFET N-CH 30V 35A 1212-8
      SIS402DN-T1-GE3 QFN8

      Mfr.#: SIS402DN-T1-GE3 QFN8

      OMO.#: OMO-SIS402DN-T1-GE3-QFN8-1190

      Nuevo y original
      SIS402DN-T1-GE3CT

      Mfr.#: SIS402DN-T1-GE3CT

      OMO.#: OMO-SIS402DN-T1-GE3CT-1190

      Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de SIS402DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,68 US$
      0,68 US$
      10
      0,65 US$
      6,48 US$
      100
      0,61 US$
      61,41 US$
      500
      0,58 US$
      290,00 US$
      1000
      0,55 US$
      545,90 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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