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IRFS7534TRL7PP

IRFS7534TRL7PP
Mfr. #:
IRFS7534TRL7PP
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFET N CH 60V 240A D2PAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFS7534TRL7PP Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRFS7534TRL7PP más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-7
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
240 A
Rds On - Resistencia de la fuente de drenaje:
1.6 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.7 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
200 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
290 W
Configuración:
Único
Nombre comercial:
Fuerte IRFET
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
190 S
Otoño:
86 ns
Tipo de producto:
MOSFET
Hora de levantarse:
120 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
195 ns
Tiempo típico de retardo de encendido:
140 ns
Parte # Alias:
SP001573434
Unidad de peso:
0.056438 oz
Tags
IRFS7534T, IRFS7534, IRFS753, IRFS75, IRFS7, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
MOSFET Transistor, N Channel, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V RoHS Compliant: Yes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***ure Electronics
Single N-Channel 60 V 1.95 mOhm 200 nC HEXFET® Power Mosfet - D2PAK-7
*** Electronic Components
Darlington Transistors MOSFET MOSFET N CH 60V 240A D2PAK
*** Stop Electro
Power Field-Effect Transistor, 240A I(D), 60V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
*** Source Electronics
Trans MOSFET N-CH Si 60V 338A 7-Pin(6+Tab) D2PAK T/R / MOSFET N CH 60V 240A D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***roFlash
Single N-Channel 60 V 1.4 mOhm 354 nC HEXFET® Power Mosfet - D2PAK-7
***(Formerly Allied Electronics)
MOSFET, 60V,240A, 1.4mOhm, 236nC, D2PAK7 Pin
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 60V, 338A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 338A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00115ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
***ark
Mosfet Transistor, N Channel, 195 A, 60 V, 0.00165 Ohm, 10 V, 3.7 V
*** Source Electronics
MOSFET N CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 295A 3-Pin(2+Tab) D2PAK T/R
***trelec
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - D2PAK
***(Formerly Allied Electronics)
MOSFET,60V, 195A, 2.0mOhm, 274 nC, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N CH, 60V, 195A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
***icroelectronics
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) H2PAK T/R
***ure Electronics
N-Channel 60 V 2.4 mOhm SMT STripFET VI DeepGate Power Mosfet - H2PAK-6
***icroelectronics SCT
Power MOSFETs, 60V, 180A, H2PAK-6, Tape and Reel
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
Automotive-grade N-channel 60 V, 1.6 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
***et
Trans MOSFET N-CH 60V 180A 6-Pin H2PAK T/R
***icroelectronics SCT
Automotive Power Discrete, 60V, 180A, H2PAK-6, Tape and Reel
***el Electronic
CAP CERAMIC DISK RDL LONG LEADS
***(Formerly Allied Electronics)
IRFS3006-7PPBF N-channel MOSFET Transistor; 293 A; 60 V; 7-Pin D2PAK
***ure Electronics
Single N-Channel 60 V 2.1 mOhm 200 nC HEXFET® Power Mosfet - D2PAK-7
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHS
***roFlash
Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:240A; On Resistance Rds(On):0.0015Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***ure Electronics
FDB0170N607L Series 60 V 300 A 1.4 mOhm N-Channel Power Trench Mosfet - D2PAK-7
***emi
N-Channel PowerTrench® MOSFET 60V, 300A, 1.4mΩ
***r Electronics
Power Field-Effect Transistor, 300A I(D), 60V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***el Electronic
Chip Resistor - Surface Mount 160kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 160K OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Parte # Mfg. Descripción Valores Precio
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PPTR-ND		Infineon Technologies AGMOSFET N CH 60V 240A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		On Order
  • 800:$1.7078
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PPCT-ND		Infineon Technologies AGMOSFET N CH 60V 240A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 100:$2.4039
  • 10:$2.9320
  • 1:$3.2800
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PPDKR-ND		Infineon Technologies AGMOSFET N CH 60V 240A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 100:$2.4039
  • 10:$2.9320
  • 1:$3.2800
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PP		Infineon Technologies AGTrans MOSFET N-CH 60V 255A 7-Pin D2PAK T/R - Tape and Reel (Alt: IRFS7534TRL7PP)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$1.1929
  • 1600:$1.1499
  • 3200:$1.1079
  • 4800:$1.0709
  • 8000:$1.0519
IRFS7534TRL7PP
DISTI # 49X0792		Infineon Technologies AGMOSFET Transistor, N Channel, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V RoHS Compliant: Yes0
  • 1:$2.7400
  • 10:$2.3300
  • 25:$2.2300
  • 50:$2.1200
  • 100:$2.0200
  • 250:$1.9200
  • 500:$1.7200
IRFS7534TRL7PP
DISTI # 942-IRFS7534TRL7PP		Infineon Technologies AGMOSFET MOSFET N CH 60V 240A D2PAK
RoHS: Compliant		27
  • 1:$2.7400
  • 10:$2.3300
  • 100:$2.0200
  • 250:$1.9200
  • 500:$1.7200
  • 800:$1.4500
IRFS7534TRL7PP
DISTI # 8208861P		Infineon Technologies AGMOSFET 60V 240A STRONGIRFET D2PAK-7, RL292
  • 20:£2.2450
IRFS7534TRL7PP
DISTI # 2406525		Infineon Technologies AGMOSFET, N CH, 60V, 240A, TO-263-7
RoHS: Compliant		0
  • 1:$4.3400
  • 10:$3.6900
  • 100:$3.2000
  • 250:$3.0400
  • 500:$2.7200
  • 800:$2.3500
IRFS7534TRL7PP
DISTI # 2406525		Infineon Technologies AGMOSFET, N CH, 60V, 240A, TO-263-7
RoHS: Compliant		0
  • 1:£2.3600
  • 10:£1.7800
  • 100:£1.5500
  • 250:£1.4600
  • 500:£1.2800
Imagen Parte # Descripción
LM5060MM/NOPB

Mfr.#: LM5060MM/NOPB

OMO.#: OMO-LM5060MM-NOPB

 Hot Swap Voltage Controllers Hi Side OR-ing FET Cntlr
DRV8302DCA

Mfr.#: DRV8302DCA

OMO.#: OMO-DRV8302DCA

 Motor / Motion / Ignition Controllers & Drivers 3-PHASE BRUSHLESS MOTOR PRE-DRIVER
SMBJ48A-13-F

Mfr.#: SMBJ48A-13-F

OMO.#: OMO-SMBJ48A-13-F

 TVS Diodes / ESD Suppressors 600W 48.0V
DFLS1100-7

Mfr.#: DFLS1100-7

OMO.#: OMO-DFLS1100-7

 Schottky Diodes & Rectifiers 1.0A 100V
SDR0805-101KL

Mfr.#: SDR0805-101KL

OMO.#: OMO-SDR0805-101KL

 Fixed Inductors 100uH 10% SMD 0805
09062032911

Mfr.#: 09062032911

OMO.#: OMO-09062032911

 DIN 41612 Connectors 3P 15A MALE R/A SLDR
SMBJ48A-13-F

Mfr.#: SMBJ48A-13-F

OMO.#: OMO-SMBJ48A-13-F-DIODES

 TVS DIODE 48V 77.4V SMB
LM5060MM/NOPB

Mfr.#: LM5060MM/NOPB

OMO.#: OMO-LM5060MM-NOPB-TEXAS-INSTRUMENTS

 Hot Swap Voltage Controllers Hi Side OR-ing FET Cntl
09062032911

Mfr.#: 09062032911

OMO.#: OMO-09062032911-HARTING

 DIN 41612 Connectors 3P 15A MALE R/A SLDR
DFLS1100-7

Mfr.#: DFLS1100-7

OMO.#: OMO-DFLS1100-7-DIODES

 DIODE SCHOTTKY 100V POWERDI123
Disponibilidad
Valores:
762
En orden:
2745
Ingrese la cantidad:
El precio actual de IRFS7534TRL7PP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,74 US$
2,74 US$
10
2,32 US$
23,20 US$
100
2,01 US$
201,00 US$
250
1,91 US$
477,50 US$
500
1,71 US$
855,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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