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FCP190N65F

FCP190N65F
Mfr. #:
FCP190N65F
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET SF2 650V 190MOHM F TO220
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCP190N65F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FCP190N65F más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
20.6 A
Rds On - Resistencia de la fuente de drenaje:
190 mOhms
Vgs th - Voltaje umbral puerta-fuente:
5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
60 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
208 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
SuperFET II FRFET
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FCP190N65F
Tipo de transistor:
1 N-Channel
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
18 S
Otoño:
4.2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
11 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
62 ns
Tiempo típico de retardo de encendido:
25 ns
Unidad de peso:
0.063493 oz
Tags
FCP190N65, FCP190, FCP19, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-220
***Components
In a Pack of 2, N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 ON Semiconductor FCP190N65F
***ark
SuperFET2 650V, 190 mOhm, FRFET - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
***ical
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Rail
***et Europe
Trans MOSFET N-CH 650V 20.6A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 650V TO220-3
***et
SUPERFET2 650V, 190 MOHM, FRFET
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Parte # Mfg. Descripción Valores Precio
FCP190N65F
DISTI # 20153876		ON SemiconductorSUPERFET2 650V, 190 MOHM, FRFE800
  • 800:$1.4307
FCP190N65F
DISTI # FCP190N65F-ND		ON SemiconductorMOSFET N-CH 650V 20.6A TO220-3
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.8692
FCP190N65F
DISTI # FCP190N65F		ON SemiconductorTrans MOSFET N-CH 650V 20.6A 3-Pin TO-220 Tube - Bulk (Alt: FCP190N65F)
Min Qty: 197
Container: Bulk		Americas - 0
  • 1970:$1.4900
  • 197:$1.5900
  • 394:$1.5900
  • 591:$1.5900
  • 985:$1.5900
FCP190N65F
DISTI # FCP190N65F		ON SemiconductorTrans MOSFET N-CH 650V 20.6A 3-Pin TO-220 Tube (Alt: FCP190N65F)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.2900
  • 100:€1.3900
  • 500:€1.3900
  • 25:€1.4900
  • 50:€1.4900
  • 10:€1.6900
  • 1:€1.8900
FCP190N65F
DISTI # FCP190N65F		ON SemiconductorTrans MOSFET N-CH 650V 20.6A 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP190N65F)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
  • 8000:$1.2900
  • 800:$1.3900
FCP190N65F
DISTI # FCP190N65F		ON SemiconductorTrans MOSFET N-CH 650V 20.6A 3-Pin TO-220 Tube (Alt: FCP190N65F)
RoHS: Compliant
Min Qty: 800
Container: Tube		Asia - 0
  • 40000:$1.7580
  • 20000:$1.7873
  • 8000:$1.8490
  • 4000:$1.9150
  • 2400:$1.9859
  • 1600:$2.0623
  • 800:$2.1448
FCP190N65F
DISTI # 68X0361		ON SemiconductorSF2 650V 190MOHM F TO220 / TUBE0
  • 10000:$1.5500
  • 2500:$1.6400
  • 1000:$1.7200
  • 500:$2.0200
  • 100:$2.2300
  • 10:$2.6900
  • 1:$3.3200
FCP190N65F
DISTI # 512-FCP190N65F		ON SemiconductorMOSFET SF2 650V 190MOHM F TO220
RoHS: Compliant		735
  • 1:$2.8300
  • 10:$2.4100
  • 100:$2.0900
  • 250:$1.9800
  • 500:$1.7800
  • 1000:$1.5000
  • 2500:$1.4200
  • 5000:$1.3700
FCP190N65FFairchild Semiconductor CorporationPower Field-Effect Transistor, 20.6A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		362
  • 1000:$1.5700
  • 500:$1.6500
  • 100:$1.7200
  • 25:$1.7900
  • 1:$1.9300
FCP190N65F
DISTI # 8647903P		ON SemiconductorMOSFET N-CH 650V 20.6A SUPERFET II TO220, TU140
  • 200:£1.5200
  • 100:£1.5850
  • 40:£1.7000
  • 10:£1.9350
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Mfr.#: CGA4J1X8R1E105K125AD

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 Multilayer Ceramic Capacitors MLCC - SMD/SMT EPXY 0805 25V 1uF X8R 10% AEC-Q200
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OMO.#: OMO-IXFP22N65X2-IXYS-CORPORATION

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Disponibilidad
Valores:
735
En orden:
2718
Ingrese la cantidad:
El precio actual de FCP190N65F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,83 US$
2,83 US$
10
2,41 US$
24,10 US$
100
2,09 US$
209,00 US$
250
1,98 US$
495,00 US$
500
1,78 US$
890,00 US$
1000
1,50 US$
1 500,00 US$
2500
1,42 US$
3 550,00 US$
5000
1,37 US$
6 850,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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