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LKK47-06C5

LKK47-06C5
Mfr. #:
LKK47-06C5
Fabricante:
Littelfuse
Descripción:
MOSFET 47 Amps 600V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
LKK47-06C5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
LKK47-06C5 DatasheetLKK47-06C5 Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-264-3
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
47 A
Rds On - Resistencia de la fuente de drenaje:
45 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
480 W
Configuración:
Doble
Modo de canal:
Mejora
Nombre comercial:
COOLMOS
Embalaje:
Tubo
Serie:
LKK47
Tipo de transistor:
2 N-Channel
Marca:
IXYS
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
20 ns
Cantidad de paquete de fábrica:
25
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
100 ns
Tiempo típico de retardo de encendido:
30 ns
Unidad de peso:
0.264555 oz
Tags
LKK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 47A 5-Pin(5+Tab) ISOPLUS 264
***i-Key
MOSFET 2N-CH 600V 47A ISOPLUS264
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-220-3
***ark
Mosfet, N-Ch, 600V, 50A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 50A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-247-3-4
***nell
MOSFET, N-CH, 600V, 50A, TO-247-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
***icroelectronics
N-CHANNEL 600V - 0.050 Ohm - 60A Max247 Zener-Protected MDmesh(TM)Power MOSFET
***ical
Trans MOSFET N-CH 600V 60A 3-Pin (3+Tab) Max247 Tube
***ser
Power MOSFET Transistors N-Ch 600 Volt 60 Amp
***ponent Stockers USA
60 A 600 V 0.055 ohm N-CHANNEL Si POWER MOSFET
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 60A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
IC DUAL PCMCIA PWR SWITCH 30SSOP
***icroelectronics SCT
Power MOSFETs, 600V, 60A, Max247, Tube
***ment14 APAC
MOSFET, N CH, 600V, 60A, MAX247; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:560W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:MAX-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:60A; Package / Case:Max-247; Power Dissipation Pd:560W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package
***r Electronics
Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247
***nell
MOSFET, N-CH, 600V, 52A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
***icroelectronics
N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package
***r Electronics
Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247-4
***nell
MOSFET, N-CH, 600V, 52A, 150DEG C, 350W; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 350W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)
Parte # Mfg. Descripción Valores Precio
LKK47-06C5
DISTI # LKK47-06C5-ND		IXYS CorporationMOSFET 2N-CH 600V 47A ISOPLUS264
RoHS: Compliant
Min Qty: 25
Container: Tube		Temporarily Out of Stock
  • 25:$34.8380
LKK47-06C5
DISTI # 747-LKK47-06C5		IXYS CorporationMOSFET 47 Amps 600V
RoHS: Compliant		26
  • 1:$37.2600
  • 5:$35.4000
  • 10:$34.4700
  • 25:$31.6700
  • 50:$30.3200
  • 100:$29.4400
  • 250:$27.0100
Imagen Parte # Descripción
LKK47-06C5

Mfr.#: LKK47-06C5

OMO.#: OMO-LKK47-06C5

 MOSFET 47 Amps 600V
LKK47-06C5

Mfr.#: LKK47-06C5

OMO.#: OMO-LKK47-06C5-IXYS-CORPORATION

 MOSFET 2N-CH 600V 47A ISOPLUS264
Disponibilidad
Valores:
16
En orden:
1999
Ingrese la cantidad:
El precio actual de LKK47-06C5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
37,26 US$
37,26 US$
5
35,40 US$
177,00 US$
10
34,47 US$
344,70 US$
25
31,67 US$
791,75 US$
50
30,32 US$
1 516,00 US$
100
29,44 US$
2 944,00 US$
250
27,01 US$
6 752,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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