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NVTFS5820NLTAG

NVTFS5820NLTAG
Mfr. #:
NVTFS5820NLTAG
Fabricante:
ON Semiconductor
Descripción:
MOSFET Single N-Channel 60V,29A,11.5mohm
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NVTFS5820NLTAG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NVTFS5820NLTAG DatasheetNVTFS5820NLTAG Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
WDFN-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
29 A
Rds On - Resistencia de la fuente de drenaje:
11.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.5 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
28 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
21 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Carrete
Serie:
NVTFS5820NL
Tipo de transistor:
1 N-Channel
Marca:
EN Semiconductor
Transconductancia directa - Mín .:
24.6 S
Otoño:
22 ns
Tipo de producto:
MOSFET
Hora de levantarse:
28 ns
Cantidad de paquete de fábrica:
1500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
19 ns
Tiempo típico de retardo de encendido:
10 ns
Tags
NVTFS5820, NVTFS582, NVTFS58, NVTFS5, NVTFS, NVTF, NVT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET 60V, 29A, 11.5 mOhm, Single N-Channel, u8FL, Logic Level.
***(Formerly Allied Electronics)
NVTFS5820NLTAG N-channel MOSFET Transistor; 29 A; 60 V; 8-Pin WDFN
***ure Electronics
N-Channel 60 V 11.5 mOhm 3.2 W SMT Power Mosfet - WDFN-8
***ical
Trans MOSFET N-CH 60V 11A Automotive 8-Pin WDFN EP T/R
***ark
Mosfet, N-Ch, 60V, 11A, Wdfn-8; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0101Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***nell
MOSFET, N-CH, 60V, 11A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0101ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.3V; Power Dissipation Pd: 3.2W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Source Electronics
MOSFET N CH 60V 13.5A 8PQFN / Trans MOSFET N-CH Si 60V 13.5A 8-Pin PQFN EP T/R
***emi
N-Channel PowerTrench® MOSFET 60V, 22A, 8.2mΩ
***ure Electronics
FDMS86520L Series 60 V 22 A 8.2 mOhm N-Ch PowerTrench® MOSFET - Power 56
*** Stop Electro
Power Field-Effect Transistor, 13.5A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 60V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***(Formerly Allied Electronics)
SQ4850EY-T1-GE3 N-channel MOSFET Transistor; 12 A; 60 V; 8-Pin SOIC
***ical
Trans MOSFET N-CH 60V 12A Automotive 8-Pin SOIC N T/R
***ment14 APAC
MOSFET,N CH,W DIODE,60V,12A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:6.8W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
***ure Electronics
N-Channel 60 V 12.3 mOhm Surface Mount PowerTrench Mosfet TO-252-3
***emi
Power Trench® MOSFET, N-Channel, 60V, 50A, 12.3mΩ
***r Electronics
Power Field-Effect Transistor, 11.5A I(D), 60V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 60V, 50A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0101ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:69W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 13.6 A, 110 mΩ, TO-220
***ure Electronics
N-Channel 60 V 0.11 Ohm Through Hole Logic Mosfet - TO-220
***Yang
Trans MOSFET N-CH 60V 13.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ment14 APAC
MOSFET, N CH, 60V, 13.6A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:13.6A; Source Voltage Vds:60V; On Resistance
***r Electronics
Power Field-Effect Transistor, 13.6A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
***nell
MOSFET, N, 60V, 13.6A; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.6A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 45W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Termination Type: Through Hole; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
***ark
Mosfet, N-Ch, 60V, 12A, To-252-3; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.06Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 12A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET(TM) II Power MOSFET in a DPAK package
***ark
Mosfet, N, Logic, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; On Resistance Rds(On):0.08Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 12A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Alternate Case Style: D-PAK; Current Id Max: 12A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 48A; SMD Marking: STD12NF06L; Voltage Vds Typ: 60V; Voltage Vgs Max: 16V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2V
Parte # Mfg. Descripción Valores Precio
NVTFS5820NLTAG
DISTI # 30665263		ON SemiconductorTrans MOSFET N-CH 60V 11A Automotive 8-Pin WDFN EP T/R
RoHS: Compliant		280
  • 250:$0.8224
  • 100:$0.8479
  • 50:$0.9716
  • 10:$1.4407
  • 9:$2.9707
NVTFS5820NLTAG
DISTI # NVTFS5820NLTAGOSCT-ND		ON SemiconductorMOSFET N-CH 60V 37A 8WDFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1139In Stock
  • 500:$0.8439
  • 100:$1.0881
  • 10:$1.3770
  • 1:$1.5500
NVTFS5820NLTAG
DISTI # NVTFS5820NLTAGOSDKR-ND		ON SemiconductorMOSFET N-CH 60V 37A 8WDFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1139In Stock
  • 500:$0.8439
  • 100:$1.0881
  • 10:$1.3770
  • 1:$1.5500
NVTFS5820NLTAG
DISTI # NVTFS5820NLTAGOSTR-ND		ON SemiconductorMOSFET N-CH 60V 37A 8WDFN
RoHS: Compliant
Min Qty: 1500
Container: Tape & Reel (TR)		On Order
  • 1500:$0.6468
NVTFS5820NLTAG
DISTI # C1S541901248213		ON SemiconductorTrans MOSFET N-CH 60V 11A Automotive 8-Pin WDFN EP T/R
RoHS: Compliant		280
  • 250:$0.6450
  • 100:$0.6650
  • 50:$0.7620
  • 10:$1.1300
  • 1:$2.3300
NVTFS5820NLTAG
DISTI # NVTFS5820NLTAG		ON SemiconductorTrans MOSFET N-CH 60V 11A 8-Pin WDFN T/R (Alt: NVTFS5820NLTAG)
RoHS: Compliant
Min Qty: 1500
Container: Tape and Reel		Asia - 0
    NVTFS5820NLTAG
    DISTI # NVTFS5820NLTAG    		ON SemiconductorTrans MOSFET N-CH 60V 11A 8-Pin WDFN T/R (Alt: NVTFS5820NLTAG)
    RoHS: Compliant
    Min Qty: 1500
    Container: Tape and Reel    		Europe - 0
    • 1500:€0.7719
    • 3000:€0.6319
    • 6000:€0.5789
    • 9000:€0.5339
    • 15000:€0.4959
    NVTFS5820NLTAG
    DISTI # NVTFS5820NLTAG    		ON SemiconductorTrans MOSFET N-CH 60V 11A 8-Pin WDFN T/R - Tape and Reel (Alt: NVTFS5820NLTAG)
    RoHS: Compliant
    Min Qty: 1500
    Container: Reel    		Americas - 0
    • 1500:$0.5119
    • 3000:$0.5089
    • 6000:$0.5019
    • 9000:$0.4959
    • 15000:$0.4829
    NVTFS5820NLTAG
    DISTI # 81Y7077    		ON SemiconductorMOSFET, N-CH, 60V, 11A, WDFN-8,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0101ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,Power RoHS Compliant: Yes13495
    • 1:$1.2900
    • 10:$1.1000
    • 25:$1.0100
    • 50:$0.9290
    • 100:$0.8430
    • 250:$0.7940
    • 500:$0.7450
    • 1000:$0.5880
    NVTFS5820NLTAG
    DISTI # 65T1528    		ON SemiconductorMOSFET, N-CH, 60V, 11A, WDFN-8,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0101ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,Product Range:- RoHS Compliant: Yes0
      NVTFS5820NLTAG
      DISTI # 70467587      		ON SemiconductorNVTFS5820NLTAG N-channel MOSFET Transistor,29 A,60 V,8-Pin WDFN
      RoHS: Compliant      		0
      • 100:$0.5080
      • 200:$0.4980
      • 500:$0.4880
      • 1000:$0.4780
      NVTFS5820NLTAGON Semiconductor 
      RoHS: Not Compliant      		2025
      • 1000:$0.5800
      • 500:$0.6100
      • 100:$0.6300
      • 25:$0.6600
      • 1:$0.7100
      NVTFS5820NLTAG
      DISTI # 863-NVTFS5820NLTAG      		ON SemiconductorMOSFET Single N-Channel 60V,29A,11.5mohm
      RoHS: Compliant      		34
      • 1:$1.2900
      • 10:$1.1000
      • 100:$0.8430
      • 500:$0.7450
      • 1000:$0.5880
      NVTFS5820NLTAGON SemiconductorAVAILABLE4849
        NVTFS5820NLTAG
        DISTI # 2533215        		ON SemiconductorMOSFET, N-CH, 60V, 11A, WDFN-8
        RoHS: Compliant        		13555
        • 5:£0.9400
        • 25:£0.8490
        • 100:£0.6510
        • 250:£0.6130
        • 500:£0.5740
        NVTFS5820NLTAGON Semiconductor 2400
        • 1:$1.4200
        • 100:$0.9100
        • 500:$0.7500
        • 1000:$0.6900
        NVTFS5820NLTAG
        DISTI # 2533215        		ON SemiconductorMOSFET, N-CH, 60V, 11A, WDFN-8
        RoHS: Compliant        		13495
        • 1:$2.0400
        • 10:$1.7500
        • 100:$1.3400
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