IPB017N08N5ATMA1

Mfr. #:: IPB017N08N5ATMA1
Fabricante:: Infineon Technologies
Descripción:: RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPB017N08N5ATMA1 Ficha de datos
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Más información:: IPB017N08N5ATMA1 más información

Atributo del producto
Valor de atributo

Fabricante: Infineon Technologies

categoria de producto: Transistores - FET, MOSFET - Sencillo

embalaje: Carrete

Alias de parte: IPB017N08N5 SP001132472

Unidad de peso: 0.139332 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: TO-263-3

Tecnología: Si

Número de canales: 1 Channel

Configuración: Único

Tipo transistor: 1 N-Channel

Disipación de potencia Pd: 375 W

Temperatura máxima de funcionamiento: + 175 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 37 ns

Hora de levantarse: 36 ns

Vgs-Puerta-Fuente-Voltaje: +/- 20 V

Id-corriente-de-drenaje-continua: 120 A

Vds-Drain-Source-Breakdown-Voltage: 80 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.2 V

Resistencia a la fuente de desagüe de Rds: 2.1 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 102 ns

Tiempo de retardo de encendido típico: 40 ns

Qg-Gate-Charge: 178 nC

Transconductancia directa-Mín.: 114 S

Modo de canal: Mejora

Tags: IPB017N0, IPB017, IPB01, IPB0, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

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IPB017N08N5ATMA1 Descripción

***ical: Trans MOSFET N-CH 80V 177A Automotive 3-Pin(2+Tab) D2PAK T/R

***ark: Mosfet, N-Ch, 80V, 120A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPB017N08N5ATMA1 Más información

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPB017N08N5ATMA1 DISTI # V72:2272_06377001	Infineon Technologies AG	Trans MOSFET N-CH 80V 177A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	990	500:$3.2640 250:$3.4750 100:$3.7800 25:$4.2990 10:$4.3060 1:$4.9780
IPB017N08N5ATMA1 DISTI # IPB017N08N5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2548In Stock	500:$3.8353 100:$4.7364 10:$5.7760 1:$6.4700
IPB017N08N5ATMA1 DISTI # IPB017N08N5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2548In Stock	500:$3.8353 100:$4.7364 10:$5.7760 1:$6.4700
IPB017N08N5ATMA1 DISTI # IPB017N08N5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	1000:$3.1404
IPB017N08N5ATMA1 DISTI # 30283781	Infineon Technologies AG	Trans MOSFET N-CH 80V 177A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$3.0148
IPB017N08N5ATMA1 DISTI # 31589258	Infineon Technologies AG	Trans MOSFET N-CH 80V 177A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	990	500:$3.2640 250:$3.4750 100:$3.7800 25:$4.2990 10:$4.3060 3:$4.9780
IPB017N08N5ATMA1 DISTI # IPB017N08N5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB017N08N5ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.8900 2000:$2.7900 4000:$2.6900 6000:$2.5900 10000:$2.4900
IPB017N08N5ATMA1 DISTI # 13AC9021	Infineon Technologies AG	MOSFET, N-CH, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	637	1:$5.4000 10:$4.5900 25:$4.3900 50:$4.1800 100:$3.9800 250:$3.7800 500:$3.3900
IPB017N08N5 DISTI # 726-IPB017N08N5	Infineon Technologies AG	MOSFET N-Ch 80V 120A D2PAK-2 RoHS: Compliant	1296	1:$5.4000 10:$4.5900 100:$3.9800 250:$3.7800 500:$3.3900 1000:$2.8600
IPB017N08N5ATMA1 DISTI # 726-IPB017N08N5ATMA1	Infineon Technologies AG	MOSFET N-Ch 80V 120A D2PAK-2 RoHS: Compliant	1296	1:$5.4000 10:$4.5900 100:$3.9800 250:$3.7800 500:$3.3900 1000:$2.8600
IPB017N08N5ATMA1 DISTI # 2725834	Infineon Technologies AG	MOSFET, N-CH, 80V, 120A, TO-263 RoHS: Compliant	725	500:£2.6200 250:£2.9100 100:£3.0700 10:£3.5400 1:£4.6200
IPB017N08N5ATMA1 DISTI # 2725834	Infineon Technologies AG	MOSFET, N-CH, 80V, 120A, TO-263 RoHS: Compliant	587	1:$10.3200 10:$9.2100 100:$7.5500 500:$6.1200

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: IPB017N08N5 OMO.#: OMO-IPB017N08N5	MOSFET N-Ch 80V 120A D2PAK-2
	Mfr.#: IPB017N08N5ATMA1 OMO.#: OMO-IPB017N08N5ATMA1	MOSFET N-Ch 80V 120A D2PAK-2
	Mfr.#: IPB017N06N3 G OMO.#: OMO-IPB017N06N3-G	MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB017N06N3GXT OMO.#: OMO-IPB017N06N3GXT	MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB017N08N5 OMO.#: OMO-IPB017N08N5-1190	MOSFET N-Ch 80V 120A D2PAK-2
	Mfr.#: IPB017N06N 017N06N -7 OMO.#: OMO-IPB017N06N-017N06N--7-1190	Nuevo y original
	Mfr.#: IPB017N06N3 G OMO.#: OMO-IPB017N06N3-G-1190	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263 T/R
	Mfr.#: IPB017N06N3G OMO.#: OMO-IPB017N06N3G-1190	MOSFET N-CH 60V 180A OPTIMOS3 TO263-7, EA
	Mfr.#: IPB017N06N3GATMA1 OMO.#: OMO-IPB017N06N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 180A TO263-7
	Mfr.#: IPB017N08N5ATMA1 OMO.#: OMO-IPB017N08N5ATMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2

Disponibilidad

Valores:: Available
En orden:: 5500
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El precio actual de IPB017N08N5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~3,74 US$~~; ~~3,74 US$~~

10: ~~3,55 US$~~; ~~35,48 US$~~

100: ~~3,36 US$~~; ~~336,15 US$~~

500: ~~3,17 US$~~; ~~1 587,40 US$~~

1000: ~~2,99 US$~~; ~~2 988,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPB017N08N5ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes