BSS306NH6327XTSA1

Mfr. #:: BSS306NH6327XTSA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-Ch 30V 2.3A SOT-23-3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: BSS306NH6327XTSA1 Ficha de datos
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HTML Datasheet:: BSS306NH6327XTSA1 Datasheet BSS306NH6327XTSA1 Datasheet (P4-P6)BSS306NH6327XTSA1 Datasheet (P7-P9)
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Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: SOT-23-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 30 V

Id - Corriente de drenaje continua:: 2.3 A

Rds On - Resistencia de la fuente de drenaje:: 57 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 1.2 V

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 1.5 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 500 mW (1/2 W)

Configuración:: Único

Modo de canal:: Mejora

Calificación:: AEC-Q101

Embalaje:: Carrete

Altura:: 1.1 mm

Longitud:: 2.9 mm

Serie:: BSS306

Tipo de transistor:: 1 N-Channel

Ancho:: 1.3 mm

Marca:: Infineon Technologies

Transconductancia directa - Mín .:: 5 S

Otoño:: 1.4 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 2.3 ns

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 8.3 ns

Tiempo típico de retardo de encendido:: 4.4 ns

Parte # Alias:: BSS306N BSS36NH6327XT H6327 SP000928940

Unidad de peso:: 0.000282 oz

Tags: BSS306NH, BSS306, BSS30, BSS3, BSS

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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BSS306NH6327XTSA1 Descripción

***itex: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23

***Yang: Trans MOSFET N-CH 30V 2.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled

***ure Electronics: Single N-Channel 30 V 57 mOhm 1.5 nC OptiMOS Small Signal Mosfet - SOT-23

***p One Stop: Trans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET, N CH, 30V, 2.3A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:30V; On Resistance

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.3 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) Ohm = 93 / Gate-Source Voltage V = 20 / Fall Time ns = 1.4 / Rise Time ns = 2.3 / Turn-OFF Delay Time ns = 8.3 / Turn-ON Delay Time ns = 4.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500

***emi: N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90mΩ

***enic: 30V 1.9A 500mW 60m´Î@10V2.2A 2V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***trelec: MOSFET Operating temperature: -55...150 °C Marking: 357 Drive: logic level Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 500 mW

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.9A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:357; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

***eco: Transistor MOSFET Negative Channel 30 Volt 1.7A 3-Pin SuperSOT T/R

***emi: N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.7A, 85mΩ

***ure Electronics: N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 125 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

***rchild Semiconductor: SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

***itex: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.08ohm; 0.5W; -55+150 deg.C; SMD; SOT23

***eco: Transistor MOSFET P Channel 30 Volt 2 Amp 3 Pin Supersot Tape and Reel

***Yang: Trans MOSFET P-CH 30V 2A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled

*** Electronics: FSC FDN360P TRANS MOSFET P-CH 30V 2A 3-PIN SUPERSO T FETMOSFET SOT23

***ource: FDN360P MOSFET P-Channel -30V -2A 0.060ohm SOT-23 marking 360

***enic: 30V 2A 500mW 80m´Î@10V2A 3V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***trelec: MOSFET Operating temperature: -55...150 °C Marking: 360 Drive: logic level Housing type: SOT-23 Polarity: P Power dissipation: 500 mW

***rchild Semiconductor: This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ure Electronics: ZXMN3A01 Series 30 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3

***ow.cn: Trans MOSFET N-CH 30V 1.8A 3-Pin SOT-23 T/R

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***el Electronic: MOSFET N-Channel 600V Power MDmesh

***nell: MOSFET, N SOT-23 REEL 3K; Transistor Polarity:N; Max Current Id:2A; Max Voltage Vds:30V; On State Resistance:0.12ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:806mW; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:2A; Current Temperature:25°C; Max Junction Temperature Tj:150°C; Max On State Resistance:0.12ohm; Max Power Dissipation Ptot:625mW; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:1V; No. of Transistors:1; Power Dissipation Pd:625mW; Pulse Current Idm:8A; Reel Quantity:3000; SMD Marking:7N3; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:30V; Typ Voltage Vgs th:1V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: P-Channel 30 V, 0.048 Ohm typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package

***ure Electronics: Single P-Channel 30 V 0.35 W 6 nC Silicon Surface Mount Mosfet - SOT-23

***ark: MOSFET, P-CH, -30V, -2A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

***nell: MOSFET, P-CH, -30V, -2A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: STripFET H6 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)

***ure Electronics: N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 30V 5.8A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Source Voltage Vds:30V; On Resistance

***nell: MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 5.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
BSS306NH6327XTSA1 DISTI # V72:2272_06391721	Infineon Technologies AG	Trans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	12889	6000:$0.0868 3000:$0.0886 1000:$0.1014 500:$0.1131 250:$0.1257 100:$0.1397 25:$0.3000 10:$0.3334 1:$0.4702
BSS306NH6327XTSA1 DISTI # V36:1790_06391721	Infineon Technologies AG	Trans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	0	9000000:$0.0656 4500000:$0.0658 900000:$0.0798 90000:$0.1027 9000:$0.1064
BSS306NH6327XTSA1 DISTI # BSS306NH6327XTSA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 2.3A SOT23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	29839In Stock	1000:$0.1218 500:$0.1583 100:$0.2314 10:$0.3710 1:$0.4900
BSS306NH6327XTSA1 DISTI # BSS306NH6327XTSA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 2.3A SOT23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	29839In Stock	1000:$0.1218 500:$0.1583 100:$0.2314 10:$0.3710 1:$0.4900
BSS306NH6327XTSA1 DISTI # BSS306NH6327XTSA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 2.3A SOT23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	27000In Stock	75000:$0.0769 30000:$0.0857 15000:$0.0916 6000:$0.1005 3000:$0.1064
BSS306NH6327XTSA1 DISTI # 33955283	Infineon Technologies AG	Trans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	30000	18000:$0.0515 12000:$0.0537 6000:$0.0561 3000:$0.0627
BSS306NH6327XTSA1 DISTI # 31701565	Infineon Technologies AG	Trans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	12889	6000:$0.0868 3000:$0.0886 1000:$0.1014 500:$0.1131 250:$0.1257 100:$0.1397 99:$0.3000
BSS306NH6327XTSA1 DISTI # BSS306NH6327XTSA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BSS306NH6327XTSA1) RoHS: Compliant Min Qty: 9000 Container: Reel	Americas - 0	90000:$0.0569 45000:$0.0579 27000:$0.0599 18000:$0.0619 9000:$0.0639
BSS306NH6327XTSA1 DISTI # SP000928940	Infineon Technologies AG	Trans MOSFET N-CH 30V 2.3A 3-Pin SOT-23 T/R (Alt: SP000928940) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.0569 18000:€0.0619 12000:€0.0679 6000:€0.0769 3000:€0.0909
BSS306NH6327XTSA1 DISTI # 85X4156	Infineon Technologies AG	Bipolar Pre-Biased / Digital Transistor, BRT, SOT-23 RoHS Compliant: Yes	15580	1000:$0.1140 500:$0.1260 250:$0.1370 100:$0.1480 50:$0.2060 25:$0.2640 10:$0.3220 1:$0.4550
BSS306N H6327 DISTI # 726-BSS306NH6327XT	Infineon Technologies AG	MOSFET N-Ch 30V 2.3A SOT-23-3 RoHS: Compliant	67351	1:$0.4500 10:$0.3190 100:$0.1470 1000:$0.1130 3000:$0.0960 9000:$0.0880 24000:$0.0820
BSS306NH6327XTSA1 DISTI # 726-BSS306NH6327	Infineon Technologies AG	MOSFET N-Ch 30V 2.3A SOT-23-3 RoHS: Compliant	14454	1:$0.4500 10:$0.3190 100:$0.1470 1000:$0.1130 3000:$0.0960 9000:$0.0880 24000:$0.0820
BSS306NH6327XT DISTI # 726-BSS306NH6327XTSA	Infineon Technologies AG	MOSFET N-Ch 30V 2.3A SOT-23-3 RoHS: Compliant	2245	1:$0.4500 10:$0.3190 100:$0.1470 1000:$0.1130 3000:$0.0960 9000:$0.0880 24000:$0.0820 45000:$0.0740 99000:$0.0710
BSS306NH6327XTSA1 DISTI # 8270137	Infineon Technologies AG	INFINEON TRANS BSS306NH6327XT, RL	3000	6000:£0.0660 3000:£0.0690 1000:£0.0820 250:£0.1090
BSS306NH6327XTSA1 DISTI # BSS306NH6327XTSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,2.3A,0.5W,SOT23	111	3000:$0.0608 1000:$0.0653 250:$0.0752 50:$0.0937 10:$0.1086
BSS306NH6327XTSA1 DISTI # 2443468RL	Infineon Technologies AG	MOSFET, N CH, 30V, 2.3A, SOT-23-3 RoHS: Compliant	0	24000:$0.1270 9000:$0.1360 3000:$0.1480 1000:$0.1740 100:$0.2270 10:$0.4910 1:$0.6920
BSS306NH6327XTSA1 DISTI # 2443468	Infineon Technologies AG	MOSFET, N CH, 30V, 2.3A, SOT-23-3 RoHS: Compliant	15580	24000:$0.1270 9000:$0.1360 3000:$0.1480 1000:$0.1740 100:$0.2270 10:$0.4910 1:$0.6920
BSS306NH6327XTSA1 DISTI # 2443468	Infineon Technologies AG	MOSFET, N CH, 30V, 2.3A, SOT-23-3	36530	500:£0.0934 250:£0.1130 100:£0.1170 25:£0.2690 5:£0.2810

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Disponibilidad

Valores:: 14
En orden:: 1997
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El precio actual de BSS306NH6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,45 US$~~; ~~0,45 US$~~

10: ~~0,32 US$~~; ~~3,19 US$~~

100: ~~0,15 US$~~; ~~14,70 US$~~

1000: ~~0,11 US$~~; ~~113,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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BSS306NH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes