IPD95R2K0P7ATMA1

IPD95R2K0P7ATMA1
Mfr. #:
IPD95R2K0P7ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET 950 V CoolMOS P7
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD95R2K0P7ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPD95R2K0P7ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DPAK-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
950 V
Id - Corriente de drenaje continua:
4 A
Rds On - Resistencia de la fuente de drenaje:
2 Ohms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
10 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
37 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Serie:
P7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
18 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
41 ns
Tiempo típico de retardo de encendido:
6 ns
Parte # Alias:
IPD95R2K0P7
Tags
IPD95R, IPD95, IPD9, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
950V CoolMOS™ P7 SJ MOSFETs
Infineon Technologies 950V CoolMOS™ P7 SJ MOSFETs employs 950V super junction technology and combines best-in-class performance with state of the art ease-of-use. These MOSFETs come with an integrated Zener diode Electro Static Discharge (ESD) protection. The integrated diode improves ESD robustness that reduces ESD-related yield loss and provides exceptional ease-of-use levels. These MOSFETs offer 3V VGS(th) and narrow tolerance of only ±0.5V that makes it easy to drive and design-in. The 950V SJ MOSFETs provide low DPAK RDS(on) that enables higher density while decreasing BOM and assembly cost.
Parte # Mfg. Descripción Valores Precio
IPD95R2K0P7ATMA1
DISTI # V72:2272_22601862
Infineon Technologies AGLOW POWER_NEW1949
  • 1000:$0.5000
  • 500:$0.5465
  • 250:$0.6072
  • 100:$0.6747
  • 25:$0.8213
  • 10:$0.8563
  • 1:$0.9599
IPD95R2K0P7ATMA1
DISTI # V36:1790_22601862
Infineon Technologies AGLOW POWER_NEW0
    IPD95R2K0P7ATMA1
    DISTI # IPD95R2K0P7ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 950V 4A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    2908In Stock
    • 1000:$0.6495
    • 500:$0.8048
    • 100:$1.0184
    • 10:$1.2710
    • 1:$1.4300
    IPD95R2K0P7ATMA1
    DISTI # IPD95R2K0P7ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 950V 4A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    2908In Stock
    • 1000:$0.6495
    • 500:$0.8048
    • 100:$1.0184
    • 10:$1.2710
    • 1:$1.4300
    IPD95R2K0P7ATMA1
    DISTI # IPD95R2K0P7ATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 950V 4A TO252
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    2500In Stock
    • 2500:$0.5929
    IPD95R2K0P7ATMA1
    DISTI # 32656178
    Infineon Technologies AGLOW POWER_NEW2500
    • 2500:$0.5692
    IPD95R2K0P7ATMA1
    DISTI # 32319638
    Infineon Technologies AGLOW POWER_NEW1949
    • 1000:$0.5375
    • 500:$0.5875
    • 250:$0.6527
    • 100:$0.7253
    • 25:$0.8829
    • 15:$0.9205
    IPD95R2K0P7ATMA1
    DISTI # SP001819720
    Infineon Technologies AGTrans MOSFET N-CH 950V 4A 3-Pin TO-252 T/R (Alt: SP001819720)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 5000
    • 2500:€0.6339
    • 5000:€0.5179
    • 10000:€0.4749
    • 15000:€0.4389
    • 25000:€0.4069
    IPD95R2K0P7ATMA1
    DISTI # IPD95R2K0P7ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 950V 4A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD95R2K0P7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.4929
    • 5000:$0.4749
    • 10000:$0.4579
    • 15000:$0.4429
    • 25000:$0.4349
    IPD95R2K0P7ATMA1
    DISTI # 71AC0385
    Infineon Technologies AGMOSFET, 950V, 4A, 150DEG C, 37W,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:950V,On Resistance Rds(on):1.71ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes240
    • 1:$0.5950
    IPD95R2K0P7ATMA1
    DISTI # 726-IPD95R2K0P7ATMA1
    Infineon Technologies AGMOSFET 950 V CoolMOS P7
    RoHS: Compliant
    0
    • 2500:$0.4560
    • 10000:$0.4390
    IPD95R2K0P7ATMA1
    DISTI # 2916129
    Infineon Technologies AGMOSFET, 950V, 4A, 150DEG C, 37W
    RoHS: Compliant
    280
    • 500:£0.5720
    • 250:£0.6550
    • 100:£0.7380
    • 25:£0.9340
    • 5:£1.0300
    IPD95R2K0P7ATMA1
    DISTI # XSKDRABV0048058
    Infineon Technologies AG 
    RoHS: Compliant
    7500 in Stock0 on Order
    • 7500:$0.7136
    • 2500:$0.7645
    IPD95R2K0P7ATMA1
    DISTI # XSKDRABS0031503
    Infineon Technologies AG 
    RoHS: Compliant
    7500 in Stock0 on Order
    • 7500:$0.6359
    • 2500:$0.6812
    IPD95R2K0P7ATMA1
    DISTI # 2916129
    Infineon Technologies AGMOSFET, 950V, 4A, 150DEG C, 37W
    RoHS: Compliant
    240
    • 5000:$0.7680
    • 1000:$0.8100
    • 500:$0.8570
    • 250:$0.9900
    • 100:$1.1700
    • 25:$1.4400
    • 5:$1.6500
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    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de IPD95R2K0P7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,12 US$
    1,12 US$
    10
    0,96 US$
    9,60 US$
    100
    0,74 US$
    73,70 US$
    500
    0,65 US$
    326,00 US$
    1000
    0,52 US$
    515,00 US$
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