We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
Parte # | Mfg. | Descripción | Valores | Precio |
---|---|---|---|---|
SI4442DY-T1-E3 DISTI # V72:2272_09215567 | Vishay Intertechnologies | N-CH MOSFET SO-8 30V 4.5MOHM @ | 3535 |
|
SI4442DY-T1-E3 DISTI # V36:1790_09215567 | Vishay Intertechnologies | N-CH MOSFET SO-8 30V 4.5MOHM @ | 0 |
|
SI4442DY-T1-E3 DISTI # SI4442DY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 15A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1357In Stock |
|
SI4442DY-T1-E3 DISTI # SI4442DY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 15A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1357In Stock |
|
SI4442DY-T1-E3 DISTI # SI4442DY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 15A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
SI4442DY-T1-E3 DISTI # 29064978 | Vishay Intertechnologies | N-CH MOSFET SO-8 30V 4.5MOHM @ | 3535 |
|
SI4442DY-T1-E3 DISTI # SI4442DY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4442DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 2500 |
|
SI4442DY-T1-E3 DISTI # 35K3465 | Vishay Intertechnologies | N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power Dissipation Pd:3.5W RoHS Compliant: Yes | 0 |
|
SI4442DY-T1-E3 DISTI # 06J7735 | Vishay Intertechnologies | N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:3.5W RoHS Compliant: Yes | 0 |
|
SI4442DY-T1-E3 DISTI # 70026220 | Vishay Siliconix | MOSFET,30V N-Channel @2.5V RoHS: Compliant | 0 |
|
SI4442DY-T1-E3 DISTI # 781-SI4442DY-T1-E3 | Vishay Intertechnologies | MOSFET 30V 22A 3.5W RoHS: Compliant | 3854 |
|
SI4442DY-T1 DISTI # 781-SI4442DY-TR | Vishay Intertechnologies | MOSFET 30V 22A 3.5W RoHS: Not compliant | 0 | |
SI4442DY-E3 DISTI # 781-SI4442DY-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4442DY-T1-E3 RoHS: Compliant | 0 | |
SI4442DY-T1-E3 | Vishay Intertechnologies | 1936 |
| |
SI4442DY-T1-E3 | Vishay Intertechnologies | 243 | ||
SI4442DY-T1-E3 DISTI # 1653683 | Vishay Intertechnologies | TRANSISTOR, MOSFET RoHS: Compliant | 0 |
|
Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: SI4442DY-T1-E3 OMO.#: OMO-SI4442DY-T1-E3 |
MOSFET 30V 22A 3.5W | |
Mfr.#: SI4442DY-T1-GE3 OMO.#: OMO-SI4442DY-T1-GE3 |
MOSFET 30V 22A 3.5W 4.5mohm @ 10V | |
Mfr.#: SI4442DY-T1-GE3 OMO.#: OMO-SI4442DY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 30V 22A 3.5W 4.5mohm @ 10V | |
Mfr.#: SI4442DY-T1-E3-CUT TAPE |
Nuevo y original | |
Mfr.#: SI4442DY OMO.#: OMO-SI4442DY-1190 |
MOSFET 30V 22A 3.5W | |
Mfr.#: SI4442DY-T1 OMO.#: OMO-SI4442DY-T1-1190 |
MOSFET 30V 22A 3.5W | |
Mfr.#: SI4442DY-T1-E3 OMO.#: OMO-SI4442DY-T1-E3-VISHAY |
MOSFET N-CH 30V 15A 8-SOIC | |
Mfr.#: SI4442DYT1E3 OMO.#: OMO-SI4442DYT1E3-1190 |
Nuevo y original |