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IPB65R125C7ATMA1

IPB65R125C7ATMA1
Mfr. #:
IPB65R125C7ATMA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 700V 75A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB65R125C7ATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
IPB65R125C7 SP001080134
Unidad de peso
0.068654 oz
Nombre comercial
CoolMOS
Paquete-Estuche
TO-263-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Id-corriente-de-drenaje-continua
75 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Resistencia a la fuente de desagüe de Rds
125 mOhms
Polaridad del transistor
Canal N
Tags
IPB65R12, IPB65R1, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IPB65R125C7 Series 650 V 18 A CoolMOS™ C7 Power Transistor - TO-263-3, D²Pak)
***ical
Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 18A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO263-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***ical
Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK
*** Electronics
VISHAY SIHB20N50E-GE3 MOSFET, N CHANNEL, 500V, 19A, TO-263-3
***ure Electronics
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
***S
French Electronic Distributor since 1988
***nell
MOSFET, N CHANNEL, 500V, 19A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 179W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
***ure Electronics
E Series N Channel 600 V 0.158 O 95 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CH, 600V, 23A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.132ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Pow
***icroelectronics
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
***ure Electronics
N-Channel 600 V 22 A 0.15 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
E Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
*** Electronics
MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
***icroelectronics
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package
***sible Micro
(CP22-1029) Transistor 650V N-Channel Mosfet D2PAK STB20N65M5
***ure Electronics
N-Channel 710 V 190 mO 36 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
***ical
Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ical
Trans MOSFET N-CH 650V 13.8A 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO263-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Parte # Mfg. Descripción Valores Precio
IPB65R125C7ATMA1
DISTI # V72:2272_06378470		Infineon Technologies AGTrans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		900
  • 75000:$2.1269
  • 30000:$2.1890
  • 15000:$2.2500
  • 6000:$2.3110
  • 3000:$2.3720
  • 1000:$2.4340
  • 500:$2.4950
  • 250:$2.8030
  • 100:$2.9840
  • 50:$3.4750
  • 25:$3.5100
  • 10:$3.5450
  • 1:$4.6310
IPB65R125C7ATMA1
DISTI # IPB65R125C7ATMA1-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB65R125C7ATMA1
    DISTI # 31653208    		Infineon Technologies AGTrans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		900
    • 6000:$2.2349
    • 3000:$2.2360
    • 1000:$2.2371
    • 500:$2.6821
    • 250:$3.0132
    • 100:$3.2078
    • 50:$3.7356
    • 25:$3.7732
    • 10:$3.8109
    • 4:$4.5258
    IPB65R125C7ATMA1
    DISTI # SP001080134    		Infineon Technologies AGTrans MOSFET N-CH 700V 18A 3-Pin D2PAK T/R (Alt: SP001080134)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 10000:€1.6900
    • 6000:€1.8900
    • 4000:€1.9900
    • 2000:€2.0900
    • 1000:€2.1900
    IPB65R125C7
    DISTI # 726-IPB65R125C7    		Infineon Technologies AGMOSFET N-Ch 700V 75A D2PAK-2
    RoHS: Compliant    		823
    • 1:$4.2300
    • 10:$3.5900
    • 100:$3.1200
    • 250:$2.9600
    • 500:$2.6500
    • 1000:$2.2400
    • 2000:$2.1200
    IPB65R125C7ATMA1
    DISTI # 726-IPB65R125C7ATMA1    		Infineon Technologies AGMOSFET N-Ch 700V 75A D2PAK-2
    RoHS: Compliant    		1000
    • 1:$4.2300
    • 10:$3.5900
    • 100:$3.1200
    • 250:$2.9600
    • 500:$2.6500
    • 1000:$2.2400
    • 2000:$2.1200
    Imagen Parte # Descripción
    IPB65R125C7ATMA2

    Mfr.#: IPB65R125C7ATMA2

    OMO.#: OMO-IPB65R125C7ATMA2-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH TO263-3
    IPB65R125C7

    Mfr.#: IPB65R125C7

    OMO.#: OMO-IPB65R125C7-1190

    		 MOSFET N-Ch 700V 75A D2PAK-2
    IPB65R125C7ATMA1

    Mfr.#: IPB65R125C7ATMA1

    OMO.#: OMO-IPB65R125C7ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 700V 75A D2PAK-2
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de IPB65R125C7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,88 US$
    2,88 US$
    10
    2,74 US$
    27,37 US$
    100
    2,59 US$
    259,26 US$
    500
    2,45 US$
    1 224,30 US$
    1000
    2,30 US$
    2 304,50 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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