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FP35R12U1T4

FP35R12U1T4
Mfr. #:
FP35R12U1T4
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules IGBT Module 35A 1200V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FP35R12U1T4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FP35R12U1T4 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
RoHS:
Y
Producto:
Módulos de silicio IGBT
Configuración:
PIM 3-Phase Input Rectifier
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
1.85 V
Corriente continua del colector a 25 C:
54 A
Corriente de fuga puerta-emisor:
400 nA
Pd - Disipación de energía:
250 W
Paquete / Caja:
SmartPIM1
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Marca:
Infineon Technologies
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Parte # Alias:
FP35R12U1T4BPSA1 SP000663678
Tags
FP35R, FP35, FP3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
SmartPIM 1 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC
***ment14 APAC
IGBT, LOW POWER NTC, 1200V, 35A, PIM; Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Voltage Vces:1.85V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; Power Dissipation Max:250W
***ineon
1200V SmartPIM 1 IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Low Switching Losses; Trench IGBT 4; T(vj io) = 150C; Low V(cesat); AI(2)O(3) Substrate for Low Thermal Resistance; Rugged Duplex frame construction; Self-acting PressFIT Assembly | Benefits: Safe and simple mounting process; Reduced assembly time; Reliable connection of module Pins and PCB; Flexible mounting possibilities | Target Applications: drives; aircon
Infineon SmartPIM & SmartPACK IGBTs
Infineon's SmartPIM & SmartPACK IGBTs are designed to fulfill the challenges for the inverter assembly and the reliability of the whole system. These devices come with a sophisticated mounting concept and combines the existing PressFIT contact with a very basic mounting and assembly technology of an inverter. The brand-new housing allows connecting the module with the heat sink and the PCB in a single step mounting process. In the Smart1 this easy mounting concept is realized by using one screw only. During this mounting process, the PressFIT pin is pressed into the PCB, the PCB is stabilized and the module is mounted in the same step on the surface of the heat sink. The whole mounting concept needs no additional tools; only an electrical screw driver is used. All well known electrical circuits are feasible. The possible current range in the housing reaches up to 75A.Learn More
Parte # Mfg. Descripción Valores Precio
FP35R12U1T4BPSA1
DISTI # FP35R12U1T4BPSA1-ND		Infineon Technologies AGIGBT MODULE VCES 1200V 35A
RoHS: Not compliant
Min Qty: 30
Container: Bulk		Limited Supply - Call
  • 30:$76.9440
FP35R12U1T4
DISTI # SP000663678		Infineon Technologies AGSmartPIM 1 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC (Alt: SP000663678)
RoHS: Compliant
Min Qty: 1		Europe - 14
  • 1:€95.4900
  • 10:€77.1900
  • 25:€70.1900
  • 50:€67.7900
  • 100:€65.5900
  • 500:€63.6900
  • 1000:€62.1900
FP35R12U1T4
DISTI # SP000663678		Infineon Technologies AGSmartPIM 1 IGBT Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT/NTC (Alt: SP000663678)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€81.4900
  • 10:€74.6900
  • 25:€71.6900
  • 50:€68.8900
  • 100:€66.3900
  • 500:€63.9900
  • 1000:€59.6900
FP35R12U1T4BPSA1
DISTI # FP35R12U1T4BPSA1		Infineon Technologies AGLOW POWER SMART - Trays (Alt: FP35R12U1T4BPSA1)
RoHS: Compliant
Min Qty: 30
Container: Tray		Americas - 0
  • 30:$75.9900
  • 32:$73.1900
  • 62:$70.5900
  • 150:$68.1900
  • 300:$66.9900
FP35R12U1T4
DISTI # 641-FP35R12U1T4		Infineon Technologies AGIGBT Modules IGBT Module 35A 1200V
RoHS: Compliant		0
  • 1:$84.4000
  • 5:$82.8500
  • 10:$79.1200
  • 25:$76.4800
  • 100:$71.2200
FP35R12U1T4
DISTI # XSKDRABV0032947		Infineon Technologies AG 
RoHS: Compliant		24 in Stock0 on Order
  • 24:$95.0000
  • 5:$101.7900
Imagen Parte # Descripción
EYG-S0407ZLAL

Mfr.#: EYG-S0407ZLAL

OMO.#: OMO-EYG-S0407ZLAL

 Thermal Interface Products Soft PGS - IGBT Mod Infineon
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de FP35R12U1T4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
84,40 US$
84,40 US$
5
82,85 US$
414,25 US$
10
79,12 US$
791,20 US$
25
76,48 US$
1 912,00 US$
100
71,22 US$
7 122,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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