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NGTB30N65IHL2WG

NGTB30N65IHL2WG
Mfr. #:
NGTB30N65IHL2WG
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors 650V/30A FAST IGBT FSII T
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NGTB30N65IHL2WG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB30N65IHL2WG DatasheetNGTB30N65IHL2WG Datasheet (P4-P6)NGTB30N65IHL2WG Datasheet (P7)
ECAD Model:
Más información:
NGTB30N65IHL2WG más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
60 A
Pd - Disipación de energía:
300 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
60 A
Marca:
EN Semiconductor
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Unidad de peso:
0.211644 oz
Tags
NGTB30N6, NGTB30, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
***ark
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***nell
IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No
***ineon
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***ark
IGBT, SINGLE, 650V, 60A, TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***S
French Electronic Distributor since 1988
***ure Electronics
IRG4PC40SPbF Series 600 V 31 A N-Channel Standard Speed IGBT - TO-220AC
***p One Stop Global
Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 940 ns Power dissipation: 160 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):1.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 60A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Current Temperature:25°C; Device Marking:IRG4PC40SPbF; Fall Time Max:380ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***ronik
IGBT 650V 30A 1,55V TO247-3 RoHSconf
***el Electronic
Cap Ceramic 470pF 50V C0G 5% Pad SMD 0805 125C Automotive T/R
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247, Tube
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
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ON Semiconductor / KEMET Motor Driver Solutions include ON Semiconductor Compact Intelligent Power Modules and KEMET's broad portfolio of capacitors. ON Semiconductor's 600V Compact Intelligent Power Modules are fully-integrated inverter power stages suitable for driving permanent magnet synchronous motors (PMSM). The modules also drive brushless-DC (BLDC) motors and AC asynchronous motors. KEMET's capacitors are suitable for harsh environments in a variety of dielectrics, terminations, and form factors offering superior performance when coupled with Intelligent Power Module motor drive systems.Learn More
Parte # Mfg. Descripción Valores Precio
NGTB30N65IHL2WG
DISTI # NGTB30N65IHL2WG-ND		ON SemiconductorIGBT 600V 70A 300W TO247
RoHS: Compliant
Min Qty: 120
Container: Tube		Temporarily Out of Stock
  • 120:$3.3169
NGTB30N65IHL2WG
DISTI # NGTB30N65IHL2WG		ON SemiconductorTrans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB30N65IHL2WG)
RoHS: Compliant
Min Qty: 210
Container: Tube		Americas - 0
  • 210:$2.0900
  • 270:$2.0900
  • 480:$1.9900
  • 1050:$1.9900
  • 2100:$1.9900
NGTB30N65IHL2WGON Semiconductor 
RoHS: Not Compliant		1159
  • 1000:$2.6500
  • 500:$2.7900
  • 100:$2.9000
  • 25:$3.0300
  • 1:$3.2600
NGTB30N65IHL2WG
DISTI # 863-NGTB30N65IHL2WG		ON SemiconductorIGBT Transistors 650V/30A FAST IGBT FSII T
RoHS: Compliant		184
  • 1:$4.3800
  • 10:$3.7200
  • 100:$3.2300
  • 250:$3.0600
  • 500:$2.7500
  • 1000:$2.3200
  • 2500:$2.2000
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Disponibilidad
Valores:
134
En orden:
2117
Ingrese la cantidad:
El precio actual de NGTB30N65IHL2WG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,38 US$
4,38 US$
10
3,72 US$
37,20 US$
100
3,23 US$
323,00 US$
250
3,06 US$
765,00 US$
500
2,75 US$
1 375,00 US$
1000
2,32 US$
2 320,00 US$
2500
2,20 US$
5 500,00 US$
5000
2,12 US$
10 600,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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