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SIE810DF-T1-E3

SIE810DF-T1-E3
Mfr. #:
SIE810DF-T1-E3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIE810DF-T1-E3 Ficha de datos
Entrega:
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ECAD Model:
Más información:
SIE810DF-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SIE810DF-E3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PolarPAK-10
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
5.2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
15 ns 10 ns
Hora de levantarse
95 ns 70 ns
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
45 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Resistencia a la fuente de desagüe de Rds
1.4 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
95 ns 100 ns
Tiempo de retardo de encendido típico
40 ns 20 ns
Modo de canal
Mejora
Tags
SIE81, SIE8, SIE
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 20 V 0.02 Ohms Surface Mount Power Mosfet -POLARPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0027ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.3V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:236A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.3V; Power Dissipation Pd:125W; Transistor Case Style:PolarPAK; No. of Pins:10; Base Number:810; Current Id Max:60A; N-channel Gate Charge:90nC; On State Resistance @ Vgs = 2.5V:2.7mohm; On State Resistance @ Vgs = 4.5V:1.6mohm; On State resistance @ Vgs = 10V:1.4mohm; Package / Case:PolarPAK; Power Dissipation Pd:125W; Power Dissipation Pd:125mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:0.8V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Parte # Mfg. Descripción Valores Precio
SIE810DF-T1-E3
DISTI # SIE810DF-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 20V 60A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$1.8141
SIE810DF-T1-E3
DISTI # SIE810DF-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE810DF-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE810DF-T1-E3
DISTI # 22M8804		Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 60A POLARPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.3V RoHS Compliant: Yes0
  • 1:$1.9500
  • 2000:$1.8600
  • 4000:$1.7400
  • 8000:$1.6200
  • 12000:$1.5500
  • 20000:$1.5300
SIE810DF-T1-E3
DISTI # 69W7162		Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 60A, POLARPAK-10,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.3V RoHS Compliant: Yes0
  • 1:$3.4800
  • 25:$2.8800
  • 50:$2.6300
  • 100:$2.3700
  • 250:$2.3000
  • 500:$2.0700
SIE810DF-T1-E3
DISTI # 781-SIE810DF-T1-E3		Vishay IntertechnologiesMOSFET 20V 60A 125W 1.4mohm @ 10V
RoHS: Compliant		0
  • 1:$3.4800
  • 10:$2.8800
  • 100:$2.3700
  • 250:$2.3000
  • 500:$2.0700
SIE810DF-T1-E3Vishay IntertechnologiesMOSFET 20V 60A 125W 1.4mohm @ 10VAmericas -
    SIE810DF-T1-E3
    DISTI # 1497642    		Vishay Intertechnologies 
    RoHS: Compliant    		0
    • 1:$5.5100
    • 10:$4.5600
    • 100:$3.7500
    • 250:$3.6500
    • 500:$3.2800
    • 3000:$3.2800
    Imagen Parte # Descripción
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3

    		 MOSFET 20V 60A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3

    		 MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de SIE810DF-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,24 US$
    2,24 US$
    10
    2,12 US$
    21,23 US$
    100
    2,01 US$
    201,15 US$
    500
    1,90 US$
    949,90 US$
    1000
    1,79 US$
    1 788,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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