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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| FQB58N08TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | Europe - 800 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: FQB5N20LTM |
MOSFET N-CH 200V 4.5A D2PAK |
|
Mfr.#: FQB5N40 OMO.#: OMO-FQB5N40-1190 |
Nuevo y original |
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Mfr.#: FQB5N40TM-NL OMO.#: OMO-FQB5N40TM-NL-1190 |
Nuevo y original |
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Mfr.#: FQB5N50 OMO.#: OMO-FQB5N50-1190 |
Nuevo y original |
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Mfr.#: FQB5N50C OMO.#: OMO-FQB5N50C-1190 |
Nuevo y original |
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Mfr.#: FQB5N50CTM-NL OMO.#: OMO-FQB5N50CTM-NL-1190 |
Nuevo y original |
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Mfr.#: FQB5N60CTM |
MOSFET N-CH 600V 4.5A D2PAK |
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Mfr.#: FQB5N60TM |
MOSFET N-CH 600V 5A D2PAK |
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Mfr.#: FQB5P10TM |
MOSFET P-CH 100V 4.5A D2PAK |
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Mfr.#: FQB5N60CTM_WS OMO.#: OMO-FQB5N60CTM-WS-126 |
IGBT Transistors MOSFET 600V,4.5A NCH MOSFET |