FDN5630

Mfr. #:: FDN5630
Fabricante:: ON Semiconductor / Fairchild
Descripción:: MOSFET SSOT-3 N-CH 60V
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDN5630 Ficha de datos
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ECAD Model:

Atributo del producto
Valor de atributo

Fabricante:: EN Semiconductor

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: SSOT-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 60 V

Id - Corriente de drenaje continua:: 1.7 A

Rds On - Resistencia de la fuente de drenaje:: 73 mOhms

Vgs - Voltaje puerta-fuente:: 20 V

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 500 mW (1/2 W)

Configuración:: Único

Modo de canal:: Mejora

Nombre comercial:: PowerTrench

Embalaje:: Carrete

Altura:: 1.12 mm

Longitud:: 2.9 mm

Producto:: Pequeña señal MOSFET

Serie:: FDN5630

Tipo de transistor:: 1 N-Channel

Escribe:: MOSFET

Ancho:: 1.4 mm

Marca:: ON Semiconductor / Fairchild

Transconductancia directa - Mín .:: 6 S

Otoño:: 6 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 6 ns

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 15 ns

Tiempo típico de retardo de encendido:: 10 ns

Parte # Alias:: FDN5630_NL

Unidad de peso:: 0.001058 oz

Tags: FDN5630, FDN563, FDN56, FDN5, FDN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDN5630 Descripción

***Components: In a Pack of 5, N-Channel MOSFET, 1.7 A, 60 V, 3-Pin SOT-23 ON Semiconductor FDN5630

***ure Electronics: N-Channel 60 V 0.5 W 100 mOhm 10 nC SMT PowerTrench Mosfet - SSOT-3

***Semiconductor: N-Channel PowerTrench® MOSFET 60V, 1.7A, 100mΩ

***trelec: MOSFET Operating temperature: -55...150 °C Marking: 5630 Housing type: SOT-23 Polarity: N Power dissipation: 500 mW

***p One Stop Global: Trans MOSFET N-CH 60V 1.7A 3-Pin SuperSOT T/R

***essParts.Net: FAIRCHILD FDN5630 / MOSFET N-CHAN 60V 1.7A SSOT3 E

***eco: N-Channel 60V PowerTrench MOSFET

*** Source Electronics: MOSFET N-CH 60V 1.7A SSOT3

***et: SUPERSOT-3, SINGLE, 600A

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:1.7A; On Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes

***nell: MOSFET, N, SMD, SSOT-3; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:1.7A; Resistance, Rds On:0.1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.4V; Case Style:SuperSOT-3; Termination Type:SMD

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space.

***ment14 APAC: MOSFET, N, SMD, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.7A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDN5630 DISTI # V72:2272_06300780	ON Semiconductor	BRT-IC-4	118	100:$0.2052 25:$0.3496 10:$0.3885 1:$0.4492
FDN5630 DISTI # V36:1790_06300780	ON Semiconductor	BRT-IC-4	0	3000000:$0.1366 1500000:$0.1367 300000:$0.1374 30000:$0.1381 3000:$0.1383
FDN5630 DISTI # FDN5630CT-ND	ON Semiconductor	MOSFET N-CH 60V 1.7A SSOT3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	59232In Stock	1000:$0.1553 500:$0.2071 100:$0.2762 10:$0.4060 1:$0.5000
FDN5630 DISTI # FDN5630DKR-ND	ON Semiconductor	MOSFET N-CH 60V 1.7A SSOT3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	59232In Stock	1000:$0.1553 500:$0.2071 100:$0.2762 10:$0.4060 1:$0.5000
FDN5630 DISTI # FDN5630TR-ND	ON Semiconductor	MOSFET N-CH 60V 1.7A SSOT3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	57000In Stock	75000:$0.1072 30000:$0.1114 15000:$0.1215 6000:$0.1299 3000:$0.1383
FDN5630 DISTI # 33614335	ON Semiconductor	BRT-IC-4	123000	3000:$0.0695
FDN5630 DISTI # 33626471	ON Semiconductor	BRT-IC-4	39000	3000:$0.1875
FDN5630 DISTI # 32397919	ON Semiconductor	BRT-IC-4	10567	305:$0.2523
FDN5630 DISTI # 30618267	ON Semiconductor	BRT-IC-4	1409	44:$0.5787
FDN5630 DISTI # 33646944	ON Semiconductor	BRT-IC-4	118	63:$0.4492
FDN5630 DISTI # FDN5630	ON Semiconductor	Trans MOSFET N-CH 60V 1.7A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN5630) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 39000	30000:$0.0903 18000:$0.0926 12000:$0.0938 6000:$0.0950 3000:$0.0956
FDN5630 DISTI # FDN5630	ON Semiconductor	Trans MOSFET N-CH 60V 1.7A 3-Pin SuperSOT T/R - Cut TR (SOS) (Alt: FDN5630) RoHS: Compliant Min Qty: 3000 Container: Cut Tape	Americas - 0	30000:$0.1052 18000:$0.1084 12000:$0.1101 6000:$0.1109 1:$0.1127
FDN5630 DISTI # FDN5630	ON Semiconductor	Trans MOSFET N-CH 60V 1.7A 3-Pin SuperSOT T/R - Bulk (Alt: FDN5630) RoHS: Compliant Min Qty: 1924 Container: Bulk	Americas - 0	19240:$0.1599 9620:$0.1639 5772:$0.1659 3848:$0.1679 1924:$0.1689
FDN5630 DISTI # FDN5630	ON Semiconductor	Trans MOSFET N-CH 60V 1.7A 3-Pin SuperSOT T/R (Alt: FDN5630) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0	300000:$0.1138 150000:$0.1157 60000:$0.1197 30000:$0.1239 18000:$0.1285 12000:$0.1335 6000:$0.1388
FDN5630 DISTI # FDN5630	ON Semiconductor	Trans MOSFET N-CH 60V 1.7A 3-Pin SuperSOT T/R (Alt: FDN5630) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.0679 18000:€0.0729 12000:€0.0859 6000:€0.1059 3000:€0.1359
FDN5630 DISTI # 67R2066	ON Semiconductor	Trans MOSFET N-CH 60V 1.7A 3-Pin SuperSOT T/R - Tape and Reel (Alt: 67R2066) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1320 18000:$0.1390 12000:$0.1440 6000:$0.1470 1:$0.1510
FDN5630 DISTI # 58K8845	ON Semiconductor	Trans MOSFET N-CH 60V 1.7A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 58K8845) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.1780 500:$0.1980 250:$0.2180 100:$0.2380 50:$0.3390 25:$0.4390 1:$0.5830
FDN5630-T DISTI # FDN5630-T	ON Semiconductor	Trans MOSFET N-CH 60V 1.7A 3-Pin SOT-23 T/R (Alt: FDN5630-T) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
FDN5630 DISTI # 61M6281	ON Semiconductor	MOSFET Transistor, N Channel, 1.7 A, 60 V, 100 mohm, 10 V, 2.4 V RoHS Compliant: Yes	37871	1000:$0.1800 500:$0.2000 250:$0.2200 100:$0.2400 50:$0.3420 25:$0.4430 1:$0.5890
FDN5630 DISTI # 58K8845	ON Semiconductor	N CHANNEL MOSFET, 60V, 1.7A, SUPER SOT-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V RoHS Compliant: Yes	10567	1000:$0.1390 250:$0.1500 500:$0.1500 1:$0.1640 25:$0.1640 50:$0.1640 100:$0.1640
FDN5630 DISTI # 67R2066	ON Semiconductor	MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,Power Dissipation Pd:500mW RoHS Compliant: Yes	3000	30000:$0.1330 18000:$0.1400 12000:$0.1450 6000:$0.1490 3000:$0.1520 1:$0.1550
FDN5630 DISTI # 512-FDN5630	ON Semiconductor	MOSFET SSOT-3 N-CH 60V RoHS: Compliant	81100	1:$0.5300 10:$0.3990 100:$0.2160 1000:$0.1620 3000:$0.1400 9000:$0.1310 24000:$0.1200 45000:$0.1160
FDN5630_F095 DISTI # 512-FDN5630_F095	ON Semiconductor	MOSFET GATE OX, 60V, NCH, .120MO (6V), TRENCH RoHS: Compliant	0
FDN5630	ON Semiconductor	N-Channel 60 V 0.5 W 100 mOhm 10 nC SMT PowerTrench Mosfet - SSOT-3 RoHS: Compliant	60000Reel	3000:$0.1400 6000:$0.1330
FDN5630	ON Semiconductor	N-Channel 60 V 0.5 W 100 mOhm 10 nC SMT PowerTrench Mosfet - SSOT-3 RoHS: Compliant	480Cut Tape/Mini-Reel	1:$0.2050 100:$0.1730 250:$0.1670 500:$0.1620 1500:$0.1560
FDN5630	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	970	1000:$0.1700 500:$0.1800 100:$0.1900 25:$0.2000 1:$0.2100
FDN5630	Fairchild Semiconductor Corporation		1365
FDN5630	Fairchild Semiconductor Corporation		4
FDN5630	Fairchild Semiconductor Corporation		3181	12:$0.4500 46:$0.2925 172:$0.1688 594:$0.1440 1286:$0.1260 3057:$0.1170
FDN5630	Freescale Semiconductor	MOSFET Transistor, N-Channel, TO-236AB	1024	756:$0.2120 190:$0.2650 1:$0.5300
FDN5630	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-236AB	3	1:$0.5300
FDN5630	Freescale Semiconductor	MOSFET Transistor, N-Channel, TO-236AB	80	43:$0.3000 9:$0.4800 1:$0.6000
FDN5630 DISTI # 6710472	ON Semiconductor	MOSFET N-CHANNEL 60V 1.7A SUPERSOT3, PK	660	500:£0.0980 250:£0.1140 100:£0.1180 50:£0.2060 5:£0.4000
FDN5630 DISTI # 6710472P	ON Semiconductor	MOSFET N-CHANNEL 60V 1.7A SUPERSOT3, RL	19960	500:£0.0980 250:£0.1140 100:£0.1180 50:£0.2060
FDN5630 DISTI # FDN5630	ON Semiconductor	Transistor: N-MOSFET,unipolar,60V,1.7A,0.5W,SuperSOT-3	5585	3000:$0.0993 500:$0.1064 100:$0.1182 25:$0.1475 5:$0.1723
FDN5630	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	3725
FDN5630 DISTI # XSFP00000048124	Fairchild Semiconductor Corporation	RoHS: Compliant	48000 in Stock0 on Order	48000:$0.1867 3000:$0.2000
FDN5630 DISTI # 2251967	ON Semiconductor	MOSFET, N-CH, 60V, 1.7A, 3-SSOT, RL	210000	9000:£0.0929 3000:£0.1080
FDN5630 DISTI # 2251967	ON Semiconductor	MOSFET, N-CH, 60V, 1.7A, 3-SSOT, RL RoHS: Compliant	81000	3000:$0.2400
FDN5630 DISTI # 1471049RL	ON Semiconductor	MOSFET, N, SMD, SSOT-3 RoHS: Compliant	0	1000:$0.2710 500:$0.3500 100:$0.4770 10:$0.6350 1:$0.7450
FDN5630 DISTI # 1471049	ON Semiconductor	MOSFET, N, SMD, SSOT-3 RoHS: Compliant	37816	1000:$0.2710 500:$0.3500 100:$0.4770 10:$0.6350 1:$0.7450

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Disponibilidad

Valores:: 80
En orden:: 2063
Ingrese la cantidad:

El precio actual de FDN5630 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,53 US$~~; ~~0,53 US$~~

10: ~~0,40 US$~~; ~~3,99 US$~~

100: ~~0,22 US$~~; ~~21,60 US$~~

1000: ~~0,16 US$~~; ~~162,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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FDN5630

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes