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FDMD8530

FDMD8530
Mfr. #:
FDMD8530
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 30V Dual N-Channel PowerTrench MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMD8530 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Power-33-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
201 A
Rds On - Resistencia de la fuente de drenaje:
1.8 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
106 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
78 W
Configuración:
Doble
Modo de canal:
Mejora
Nombre comercial:
PowerTrench Power Clip
Embalaje:
Carrete
Altura:
0.8 mm
Longitud:
3.3 mm
Serie:
FDMD8530
Tipo de transistor:
2 N-Channel
Ancho:
3.3 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
259 S
Otoño:
21 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
71 ns
Tiempo típico de retardo de encendido:
14 ns
Unidad de peso:
0.003346 oz
Tags
FDMD85, FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 30V 201A 8-Pin PQFN T/R
***emi
Dual N-Channel PowerTrench® MOSFET 30V, 201A, 1.25mΩ
***nell
MOSFET, DUAL N-CH, 30V, 201A, PQFN-8L; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 201A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 770µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vg
***r Electronics
Power Field-Effect Transistor, 201A I(D), 30V, 0.00125ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two 30V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
***emi
N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ
***ure Electronics
N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56
***rchild Semiconductor
The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
***Yang
Transistor MOSFET Array Dual N-CH 30V 40A 8-Pin PowerFLAT T/R - Tape and Reel
***ure Electronics
Dual N-Channel 30 V 18 mOhm SMT STripFET™ V Power MosFet - PowerFLAT 5x6
***icroelectronics
Automotive-grade dual N-channel 30 V, 0.016 Ohm typ., 11 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 double island package
***ark
Mosfet, Dual N Ch, 30V, 11A, Powerflat; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.016Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 25V 32A 8-Pin Power 56 T/R
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7558S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rSyncFET Schottky Body Diode DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 44A 8PQFN
***ineon
Benefits: Low RDS(ON) (less than 1.10 mOhms); Schottky Intrinsic Diode with Low Forward Voltage; Low Thermal Resistance to PCB (less than 1.0C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: MultiPhase SyncFET; Point of Load SyncFET
***(Formerly Allied Electronics)
IRLR7807ZTRPBF N-channel MOSFET Transistor; 43 A; 30 V; 3+Tab-Pin DPAK
***ure Electronics
Single N-Channel 30V 13.8 mOhm 7 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***nell
MOSFET, N-CH, 30V, 43A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Po
***ark
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Cu
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK 1212-8
***nell
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Parte # Mfg. Descripción Valores Precio
FDMD8530
DISTI # V72:2272_16119252		ON Semiconductor30V DUAL N-CHANNEL POWERTRENCH2980
  • 1000:$0.8098
  • 500:$0.9763
  • 250:$1.0628
  • 100:$1.1754
  • 25:$1.3150
  • 10:$1.4611
  • 1:$1.7095
FDMD8530
DISTI # V36:1790_16119252		ON Semiconductor30V DUAL N-CHANNEL POWERTRENCH0
  • 3000000:$0.6838
  • 1500000:$0.6841
  • 300000:$0.7109
  • 30000:$0.7588
  • 3000:$0.7669
FDMD8530
DISTI # FDMD8530CT-ND		ON SemiconductorMOSFET 2N-CH 30V 35A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4116In Stock
  • 1000:$0.9205
  • 500:$1.1110
  • 100:$1.3522
  • 10:$1.6820
  • 1:$1.8700
FDMD8530
DISTI # FDMD8530DKR-ND		ON SemiconductorMOSFET 2N-CH 30V 35A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4116In Stock
  • 1000:$0.9205
  • 500:$1.1110
  • 100:$1.3522
  • 10:$1.6820
  • 1:$1.8700
FDMD8530
DISTI # FDMD8530TR-ND		ON SemiconductorMOSFET 2N-CH 30V 35A
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$0.8013
  • 3000:$0.8321
FDMD8530
DISTI # 32625891		ON Semiconductor30V DUAL N-CHANNEL POWERTRENCH2980
  • 8:$1.7095
FDMD8530
DISTI # FDMD8530		ON SemiconductorTrans MOSFET N-CH 30V/30V 35A/35A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD8530)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 18000
  • 30000:$0.7239
  • 18000:$0.7429
  • 12000:$0.7519
  • 6000:$0.7619
  • 3000:$0.7669
FDMD8530
DISTI # FDMD8530		ON SemiconductorTrans MOSFET N-CH 30V/30V 35A/35A 8-Pin PQFN T/R (Alt: FDMD8530)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.6799
  • 18000:€0.7289
  • 12000:€0.7849
  • 6000:€0.8499
  • 3000:€1.0199
FDMD8530
DISTI # 84Y5828		ON SemiconductorMOSFET, DUAL N-CH, 30V, 201A, PQFN-8L,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:201A,Drain Source Voltage Vds:30V,On Resistance Rds(on):770µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,PowerRoHS Compliant: Yes1840
  • 1000:$0.8610
  • 500:$1.0400
  • 250:$1.1200
  • 100:$1.1900
  • 50:$1.2900
  • 25:$1.3900
  • 10:$1.4800
  • 1:$1.7500
FDMD8530.
DISTI # 96AC0020		ON SemiconductorFET 30V 1.25 MOHM PQFN56 ROHS COMPLIANT: YES12000
  • 30000:$0.7240
  • 18000:$0.7430
  • 12000:$0.7520
  • 6000:$0.7620
  • 1:$0.7670
FDMD8530
DISTI # 512-FDMD8530		ON SemiconductorMOSFET 30V Dual N-Channel PowerTrench MOSFET
RoHS: Compliant		5466
  • 1:$1.7300
  • 10:$1.4700
  • 100:$1.1800
  • 500:$1.0300
  • 1000:$0.8520
  • 3000:$0.7930
  • 6000:$0.7640
  • 9000:$0.7340
FDMD8530ON SemiconductorPOWER FIELD-EFFECT TRANSISTOR2
    FDMD8530
    DISTI # 2565204    		ON SemiconductorMOSFET, DUAL N-CH, 30V, 201A, PQFN-8L
    RoHS: Compliant    		1435
    • 1000:$1.4800
    • 500:$1.7900
    • 100:$2.2900
    • 10:$2.8500
    • 1:$3.1500
    FDMD8530
    DISTI # 2565204    		ON SemiconductorMOSFET, DUAL N-CH, 30V, 201A, PQFN-8L1435
    • 500:£0.7460
    • 250:£0.8010
    • 100:£0.8550
    • 25:£1.0600
    • 5:£1.1700
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    Disponibilidad
    Valores:
    Available
    En orden:
    1988
    Ingrese la cantidad:
    El precio actual de FDMD8530 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,73 US$
    1,73 US$
    10
    1,47 US$
    14,70 US$
    100
    1,18 US$
    118,00 US$
    500
    1,03 US$
    515,00 US$
    1000
    0,85 US$
    852,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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