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STGP40V60F

STGP40V60F
Mfr. #:
STGP40V60F
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGP40V60F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGP40V60F más información STGP40V60F Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
2.35 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
80 A
Pd - Disipación de energía:
283 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGP40V60F
Embalaje:
Tubo
Corriente continua de colector Ic Max:
40 A
Marca:
STMicroelectronics
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Unidad de peso:
0.211644 oz
Tags
STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 62500mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 80A, TO-220AB; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 283W; Collector Emitter Vol; Available until stocks are exhausted Alternative available
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IXGP30N60C3D4 Series 600 V 30 A Flange Mount High-Speed PT IGBT - TO-220AB
***i-Key
IGBT 600V 60A 220W TO220AB
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
***th Star Micro
IGBT 600V TO-220AB
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V, 24 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS
***(Formerly Allied Electronics)
600V ULTRAFAST COPACK TRENCH IGBT IN A TO-220AB PACKAGE | Infineon IRGB4062DPBF
***ineon
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
***ure Electronics
IRGB4062DPbF Series 600 V 24 A N-Channel Bipolar Transistor IGBT - TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***ment14 APAC
IGBT, COPAK, TO-220; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:48A; Package / Case:TO-220; Power Dissipation Max:250W; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulsed Current Icm:96A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 34A 31000mW 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
600 V, 30 A high speed trench gate field-stop IGBT
***nell
IGBT, SINGLE, 600V, 60A, TO-220FP-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 37W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017)
***ical
Trans IGBT Chip N-CH 600V 9A 25000mW 3-Pin(3+Tab) TO-220FP Tube
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STGF10NC60KD Series 600 V 9 A N-Channel Power Mesh IGBT - TO-220FP
***el Electronic
In a Pack of 10, STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***(Formerly Allied Electronics)
STGF10NC60KD,IGBT N-ch 600V 10A TO220FP
***nell
IGBT, TO-220FP; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 25W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating
***ure Electronics
IRG4IBC30WPbF Series 600 V 17 A Flange Mount N-Channel IGBT - TO-220 Full-Pak
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package, FULLPAK220-3, RoHS
***et
Trans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220 Full-Pak
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:17A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:45W; Package/Case:TO-220 ;RoHS Compliant: Yes
***nell
IGBT, TO-220 FULLPAK; Transistor type:IGBT; Current, Ic continuous a max:17A; Voltage, Vce sat max:2.1V; Power dissipation:45W; Case style:TO-220 Fullpak; Current, Icm pulsed:92A; Pins, No. of:3; Power, Pd:45W; Temperature, current:25°C; Temperature, full power rating:25°C; Time, fall:67ns; Time, fall typ:67ns; Time, rise:16ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Vceo:600V
***ical
Trans IGBT Chip N-CH 600V 11A 28000mW 3-Pin(3+Tab) TO-220FP Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGF14NC60KD IGBT Single Transistor, 11 A, 2.5 V, 28 W, 600 V, TO-220FP, 3 Pins
***nell
IGBT, TO-220FP; DC Collector Current: 11A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 28W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
Parte # Mfg. Descripción Valores Precio
STGP40V60F
DISTI # V99:2348_17693916		STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1000
  • 100:$1.4260
  • 25:$1.5850
  • 10:$1.7610
  • 1:$1.9560
STGP40V60F
DISTI # 497-13872-5-ND		STMicroelectronicsIGBT 600V 80A 283W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.7264
  • 500:$2.0103
  • 100:$2.3270
  • 50:$2.6546
  • 1:$3.0900
STGP40V60F
DISTI # 27154920		STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1000
  • 100:$1.4260
  • 25:$1.5850
  • 10:$1.7610
  • 5:$1.9560
STGP40V60F
DISTI # STGP40V60F		STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-PIn TO-220 Tube - Rail/Tube (Alt: STGP40V60F)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.4900
  • 2000:$1.3900
  • 4000:$1.3900
  • 6000:$1.2900
  • 10000:$1.2900
STGP40V60F
DISTI # STGP40V60F		STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-PIn TO-220 Tube (Alt: STGP40V60F)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Asia - 0
    STGP40V60FSTMicroelectronicsSTGP40V60F Series 600 V 40 A Very High Speed Trench Gate Field-Stop IGBT -TO-220
    RoHS: Compliant    		495Tube
    • 5:$2.4300
    • 150:$2.1400
    STGP40V60F
    DISTI # 511-STGP40V60F    		STMicroelectronicsIGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
    RoHS: Compliant    		0
    • 1:$2.7600
    • 10:$2.3400
    • 100:$2.0300
    • 250:$1.9300
    • 500:$1.7300
    • 1000:$1.4600
    • 2000:$1.3900
    • 5000:$1.3400
    STGP40V60F
    DISTI # 7919370P    		STMicroelectronicsIGBT TRENCH GATE 600V 40A/100 DEG TO220, TU1000
    • 50:£1.6960
    • 100:£1.4600
    STGP40V60FSTMicroelectronicsINSTOCK495
      STGP40V60F
      DISTI # C1S730200792543      		STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-220 Tube
      RoHS: Compliant      		1000
      • 100:$1.4260
      • 25:$1.5850
      • 1:$2.0000
      STGP40V60F
      DISTI # XSFP00000100809      		STMicroelectronicsInsulated Gate Bipolar Transistor
      RoHS: Compliant      		333
      • 42:$4.8600
      • 333:$4.4200
      STGP40V60F
      DISTI # 2807169      		STMicroelectronicsIGBT, SINGLE, 600V, 80A, TO-220AB
      RoHS: Compliant      		0
      • 1:£2.1300
      • 10:£1.7000
      • 100:£1.4600
      • 250:£1.4200
      • 500:£1.3800
      Imagen Parte # Descripción
      STGP4M65DF2

      Mfr.#: STGP4M65DF2

      OMO.#: OMO-STGP4M65DF2

      		 IGBT Transistors Trench Gate IGBT M Series 650V 4A
      STGP40V60F

      Mfr.#: STGP40V60F

      OMO.#: OMO-STGP40V60F

      		 IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
      STGP40V60F

      Mfr.#: STGP40V60F

      OMO.#: OMO-STGP40V60F-STMICROELECTRONICS

      		 IGBT Transistors 600V 40A Trench Gate 1.8V Vce IGBT
      STGP4M65DF2

      Mfr.#: STGP4M65DF2

      OMO.#: OMO-STGP4M65DF2-STMICROELECTRONICS

      		 IGBT M SERIES 650V 4A LOW LOSS
      Disponibilidad
      Valores:
      Available
      En orden:
      1988
      Ingrese la cantidad:
      El precio actual de STGP40V60F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,75 US$
      2,75 US$
      10
      2,34 US$
      23,40 US$
      100
      2,02 US$
      202,00 US$
      250
      1,92 US$
      480,00 US$
      500
      1,72 US$
      860,00 US$
      1000
      1,45 US$
      1 450,00 US$
      2000
      1,38 US$
      2 760,00 US$
      5000
      1,33 US$
      6 650,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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