A2T18S261W12NR3

A2T18S261W12NR3
Mfr. #:
A2T18S261W12NR3
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2T18S261W12NR3 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
A2T18S261W12NR3 DatasheetA2T18S261W12NR3 Datasheet (P4-P6)A2T18S261W12NR3 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
3 A
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 65 V
Ganar:
18.2 dB
Potencia de salida:
56 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 125 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
OM-880X-2L2L
Embalaje:
Carrete
Frecuencia de operación:
1805 MHz to 1880 MHz
Escribe:
RF Power MOSFET
Marca:
NXP / Freescale
Número de canales:
1 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
250
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 6 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
1.4 V
Parte # Alias:
935338749528
Unidad de peso:
0.133886 oz
Tags
A2T18S2, A2T18S, A2T18, A2T1, A2T
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1805 to 1880 MHz, 280 W, Typ Gain in dB is 18.2 @ 1880 MHz, 28 V, LDMOS,
*** Semiconductors SCT
Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V, FM4F, RoHS
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
Parte # Mfg. Descripción Valores Precio
A2T18S261W12NR3
DISTI # A2T18S261W12NR3-ND
NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$67.6754
A2T18S261W12NR3
DISTI # A2T18S261W12NR3
Avnet, Inc.1.8GHz 260W OM880-2L2L - Tape and Reel (Alt: A2T18S261W12NR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Americas - 0
  • 2500:$64.6900
  • 1500:$65.8900
  • 1000:$68.3900
  • 500:$71.1900
  • 250:$74.0900
A2T18S261W12NR3
DISTI # 841-A2T18S261W12NR3
NXP SemiconductorsRF MOSFET Transistors A2T18S261W12N/FM4F///REEL 13 Q2 DP0
  • 250:$66.1600
A2T18S261W12NR3
DISTI # A2T18S261W12NR3
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 250:$76.3300
Imagen Parte # Descripción
A2T18S261W12NR3

Mfr.#: A2T18S261W12NR3

OMO.#: OMO-A2T18S261W12NR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V
A2T18S260-12SR3

Mfr.#: A2T18S260-12SR3

OMO.#: OMO-A2T18S260-12SR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg., 28 V
A2T18S260W12NR3

Mfr.#: A2T18S260W12NR3

OMO.#: OMO-A2T18S260W12NR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V
A2T18S262W12NR3

Mfr.#: A2T18S262W12NR3

OMO.#: OMO-A2T18S262W12NR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V
A2T18S260W12NR3

Mfr.#: A2T18S260W12NR3

OMO.#: OMO-A2T18S260W12NR3-NXP-SEMICONDUCTORS

RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR, 1805-1880 MHz, 56 W AVG, 28 V
A2T18S260W12N

Mfr.#: A2T18S260W12N

OMO.#: OMO-A2T18S260W12N-1190

Nuevo y original
A2T18S261W12N

Mfr.#: A2T18S261W12N

OMO.#: OMO-A2T18S261W12N-1190

Nuevo y original
A2T18S262W12NR3

Mfr.#: A2T18S262W12NR3

OMO.#: OMO-A2T18S262W12NR3-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
A2T18S260-12SR3

Mfr.#: A2T18S260-12SR3

OMO.#: OMO-A2T18S260-12SR3-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
A2T18S261W12NR3

Mfr.#: A2T18S261W12NR3

OMO.#: OMO-A2T18S261W12NR3-NXP-SEMICONDUCTORS

AIRFAST RF POWER LDMOS TRANSISTO
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
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