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FDS3890

FDS3890
Mfr. #:
FDS3890
Fabricante:
ON Semiconductor
Descripción:
MOSFET 2N-CH 80V 4.7A 8-SO
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDS3890 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET: matrices
Serie
PowerTrenchR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
FDS3890_NL
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 175°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SOIC
Configuración
Dual Dual Drain
Tipo FET
2 N-Channel (Dual)
Potencia máxima
900mW
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
80V
Entrada-Capacitancia-Ciss-Vds
1180pF @ 40V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
4.7A
Rds-On-Max-Id-Vgs
44 mOhm @ 4.7A, 10V
Vgs-th-Max-Id
4V @ 250μA
Puerta-Carga-Qg-Vgs
35nC @ 10V
Disipación de potencia Pd
2 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
8 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
4.7 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Resistencia a la fuente de desagüe de Rds
44 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
26 ns
Tiempo de retardo de encendido típico
11 ns
Transconductancia directa-Mín.
24 S
Modo de canal
Mejora
Tags
FDS389, FDS38, FDS3, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 80 V 44 mOhm Surface Mount Dual PowerTrench Mosfet SOIC-8
***Semiconductor
N-Channel Dual PowerTrench® MOSFET, 80V, 4.7A, 44mΩ
***p One Stop Japan
Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R
***Components
On a Reel of 2500, ON Semiconductor FDS3890 MOSFET
***eco
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE <AZ
***i-Key
MOSFET 2N-CH 80V 4.7A SO-8
***et
S0-8, DUAL, NCH, 80V/20V
***ser
MOSFETs SO-8
***ark
Transistor; Continuous Drain Current, Id:4.7A; Drain Source Voltage, Vds:80V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:6V; Threshold Voltage, Vgs Typ:2.3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 80V, SOIC; Transistor; N CHANNEL MOSFET, 80V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:4.7A; Drain Source Voltage Vds, N Channel:80V; On Resistance Rds(on), N Channel:0.0034ohm; Rds(on) Test Voltage Vgs:6V
***nell
MOSFET, NN CH, 80V, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:80V; On Resistance Rds(on):34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Parte # Mfg. Descripción Valores Precio
FDS3890
DISTI # FDS3890TR-ND		ON SemiconductorMOSFET 2N-CH 80V 4.7A 8-SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.7237
FDS3890
DISTI # FDS3890CT-ND		ON SemiconductorMOSFET 2N-CH 80V 4.7A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.7986
  • 500:$1.0116
  • 100:$1.3044
  • 10:$1.6500
  • 1:$1.8600
FDS3890
DISTI # FDS3890DKR-ND		ON SemiconductorMOSFET 2N-CH 80V 4.7A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.7986
  • 500:$1.0116
  • 100:$1.3044
  • 10:$1.6500
  • 1:$1.8600
FDS3890
DISTI # FDS3890		ON SemiconductorTrans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3890)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5599
  • 5000:$0.5569
  • 10000:$0.5499
  • 15000:$0.5429
  • 25000:$0.5289
FDS3890
DISTI # FDS3890		ON SemiconductorTrans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R (Alt: FDS3890)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.7889
  • 5000:€0.6459
  • 10000:€0.5919
  • 15000:€0.5459
  • 25000:€0.5069
FDS3890
DISTI # FDS3890		ON SemiconductorTrans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R (Alt: FDS3890)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 2500:$0.6875
  • 5000:$0.6611
  • 7500:$0.6366
  • 12500:$0.6139
  • 25000:$0.5927
  • 62500:$0.5729
  • 125000:$0.5635
FDS3890
DISTI # 67P3482		ON SemiconductorTrans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 67P3482)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.7400
  • 10:$1.4900
  • 25:$1.3900
  • 50:$1.3000
  • 100:$1.2100
  • 250:$1.1300
  • 500:$1.0600
FDS3890
DISTI # 67P3482		ON SemiconductorN CHANNEL MOSFET, 80V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.7A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:2.3V,Product Range:-RoHS Compliant: Yes0
  • 1:$1.7400
  • 10:$1.4900
  • 25:$1.3900
  • 50:$1.3000
  • 100:$1.2100
  • 250:$1.1300
  • 500:$1.0600
  • 1000:$0.8800
FDS3890
DISTI # 87X8731		ON SemiconductorDual MOSFET, Dual N Channel, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V RoHS Compliant: Yes52
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0200
  • 500:$0.8930
  • 1000:$0.7050
FDS3890
DISTI # 512-FDS3890		ON SemiconductorMOSFET SO-8
RoHS: Compliant		0
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0200
  • 500:$0.8930
  • 1000:$0.7050
  • 2500:$0.6250
  • 10000:$0.6020
FDS3890ON Semiconductor 
RoHS: Not Compliant		2296
  • 1000:$0.7400
  • 500:$0.7800
  • 100:$0.8100
  • 25:$0.8400
  • 1:$0.9100
FDS3890Fairchild Semiconductor CorporationPower Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		60
  • 1000:$0.7400
  • 500:$0.7800
  • 100:$0.8100
  • 25:$0.8400
  • 1:$0.9100
FDS3890
DISTI # 8063630		ON SemiconductorMOSFETFAIRCHILDFDS3890, PK50
  • 5:£1.0080
  • 50:£0.8520
  • 100:£0.7400
FDS3890
DISTI # 8063630P		ON SemiconductorMOSFETFAIRCHILDFDS3890, RL270
  • 50:£0.8520
  • 100:£0.7400
FDS3890Fairchild Semiconductor Corporation 15
    FDS3890
    DISTI # 2101472    		ON SemiconductorMOSFET, NN CH, 80V, 8SOIC
    RoHS: Compliant    		52
    • 1:$2.4600
    • 10:$2.0900
    • 100:$1.6200
    • 500:$1.4200
    • 1000:$1.1200
    • 2500:$0.9900
    • 10000:$0.9530
    FDS3890
    DISTI # 2101472    		ON SemiconductorMOSFET, NN CH, 80V, 8SOIC
    RoHS: Compliant    		1012
    • 5:£1.1100
    • 25:£1.0100
    • 100:£0.8110
    • 250:£0.7590
    • 500:£0.7060
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    FDS6961A-CUT TAPE

    Mfr.#: FDS6961A-CUT TAPE

    OMO.#: OMO-FDS6961A-CUT-TAPE-1190

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    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de FDS3890 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,72 US$
    0,72 US$
    10
    0,68 US$
    6,83 US$
    100
    0,65 US$
    64,67 US$
    500
    0,61 US$
    305,35 US$
    1000
    0,57 US$
    574,80 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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