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2SJ630-TD-E

2SJ630-TD-E
Mfr. #:
2SJ630-TD-E
Fabricante:
Rochester Electronics, LLC
Descripción:
Silicon MOSFET P Channel Enhancement 12V 6A 3-Pin Surface Mount - Bulk (Alt: 2SJ630-TD-E)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
2SJ630-TD-E Ficha de datos
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Atributo del producto
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Tags
2SJ63, 2SJ6, 2SJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Silicon MOSFET P Channel Enhancement 12V 6A 3-Pin Surface Mount
***i-Key Marketplace
P-CHANNEL SILICON MOSFET
***nell
MOSFET, P CH 12V 6A SOT89; Transistor Polarity: P Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.5W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; MSL: -; Current Id Max: -6A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Switching; Voltage Vds Typ: 12V; Voltage Vgs Max: 8V; Voltage Vgs Rds on Measurement: 4.5V
Parte # Mfg. Descripción Valores Precio
2SJ630-TD-E
DISTI # 2SJ630-TD-E		ON SemiconductorSilicon MOSFET P Channel Enhancement 12V 6A 3-Pin Surface Mount - Bulk (Alt: 2SJ630-TD-E)
RoHS: Not Compliant
Min Qty: 834
Container: Bulk		Americas - 0
  • 8340:$0.3699
  • 4170:$0.3789
  • 2502:$0.3839
  • 1668:$0.3889
  • 834:$0.3919
2SJ630-TD-ESANYO Semiconductor Co Ltd 
RoHS: Not Compliant		289
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
Imagen Parte # Descripción
2SJ635-E

Mfr.#: 2SJ635-E

OMO.#: OMO-2SJ635-E-1190

 - Bulk (Alt: 2SJ635-E)
2SJ630-TD-E

Mfr.#: 2SJ630-TD-E

OMO.#: OMO-2SJ630-TD-E-1190

 Silicon MOSFET P Channel Enhancement 12V 6A 3-Pin Surface Mount - Bulk (Alt: 2SJ630-TD-E)
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Mfr.#: 2SJ633-E

OMO.#: OMO-2SJ633-E-1190

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Mfr.#: 2SJ634-TL-E

OMO.#: OMO-2SJ634-TL-E-1190

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Mfr.#: 2SJ635-TL

OMO.#: OMO-2SJ635-TL-1190

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Mfr.#: 2SJ635-TL-E

OMO.#: OMO-2SJ635-TL-E-1190

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Mfr.#: 2SJ636-TL

OMO.#: OMO-2SJ636-TL-1190

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Mfr.#: 2SJ637-S-TL-E

OMO.#: OMO-2SJ637-S-TL-E-1190

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Mfr.#: 2SJ637-TL

OMO.#: OMO-2SJ637-TL-1190

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Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de 2SJ630-TD-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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