STP180N55F3

STP180N55F3
Mfr. #:
STP180N55F3
Fabricante:
STMicroelectronics
Descripción:
MOSFET N Ch 600V 6A Hyper fast IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STP180N55F3 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
STP180N55F3 DatasheetSTP180N55F3 Datasheet (P4-P6)STP180N55F3 Datasheet (P7-P9)STP180N55F3 Datasheet (P10-P12)STP180N55F3 Datasheet (P13-P14)
ECAD Model:
Más información:
STP180N55F3 más información STP180N55F3 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
55 V
Id - Corriente de drenaje continua:
120 A
Rds On - Resistencia de la fuente de drenaje:
3.8 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
330 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
9.15 mm
Longitud:
10.4 mm
Serie:
STB180N55F3
Tipo de transistor:
1 N-Channel
Ancho:
4.6 mm
Marca:
STMicroelectronics
Otoño:
50 ns
Tipo de producto:
MOSFET
Hora de levantarse:
150 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
110 ns
Tiempo típico de retardo de encendido:
25 ns
Unidad de peso:
0.011640 oz
Tags
STP180N, STP180, STP18, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 55V 120A 3-Pin(3+Tab) TO-220 Tube
***icroelectronics
N-channel 55V - 2.9mOhm - 120A - D2PAK/TO-220
***r Electronics
Power Field-Effect Transistor, 120A I(D), 55V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 55V, 120A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 330W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 55V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Parte # Mfg. Descripción Valores Precio
STP180N55F3
DISTI # 497-7512-5-ND
STMicroelectronicsMOSFET N-CH 55V 120A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    STP180N55F3
    DISTI # 511-STP180N55F3
    STMicroelectronicsMOSFET N Ch 600V 6A Hyper fast IGBT
    RoHS: Compliant
    0
      STP180N55F3STMicroelectronics 55
        STP180N55F3STMicroelectronics 150
        • 2:$4.0320
        • 8:$2.6208
        • 21:$2.0160
        • 64:$1.8817
        • 134:$1.7471
        STP180N55F3STMicroelectronics120 A, 55 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB120
        • 75:$2.5200
        • 8:$2.7000
        • 1:$5.4000
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        Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        5000
        Ingrese la cantidad:
        El precio actual de STP180N55F3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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