FDD10N20LZTM

FDD10N20LZTM
Mfr. #:
FDD10N20LZTM
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 200V N-Channel MOSFET, UniFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDD10N20LZTM Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDD10N20LZTM más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
7.6 A
Rds On - Resistencia de la fuente de drenaje:
300 mOhms
Qg - Carga de puerta:
12 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
56 W
Configuración:
Único
Embalaje:
Carrete
Altura:
2.39 mm
Longitud:
6.73 mm
Serie:
FDD10N20LZ
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
8 S
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Unidad de peso:
0.009184 oz
Tags
FDD10N, FDD10, FDD1, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET,UniFETTM, Logic Level, 200 V, 7.6 A, 360 mΩ, DPAK
***ure Electronics
FDD10N20LZ Series 200 V 7.6 A 360 mOhm N-Channel UniFet Mosfet - DPAK-3
***ark
TAPE REEL/UNIFET1 200V N-CHANNEL MOSFET, DPAK, ZENER BUILT IN PRODUCT,
***r Electronics
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 200V, 7.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.6A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Available until stocks are exhausted Alternative available
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Parte # Mfg. Descripción Valores Precio
FDD10N20LZTM
DISTI # FDD10N20LZTMCT-ND
ON SemiconductorMOSFET N-CH 200V 7.6A DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4398In Stock
  • 1000:$0.4107
  • 500:$0.5073
  • 100:$0.6764
  • 10:$0.8690
  • 1:$0.9900
FDD10N20LZTM
DISTI # FDD10N20LZTMDKR-ND
ON SemiconductorMOSFET N-CH 200V 7.6A DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4398In Stock
  • 1000:$0.4107
  • 500:$0.5073
  • 100:$0.6764
  • 10:$0.8690
  • 1:$0.9900
FDD10N20LZTM
DISTI # FDD10N20LZTMTR-ND
ON SemiconductorMOSFET N-CH 200V 7.6A DPAK-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.3635
FDD10N20LZTM
DISTI # FDD10N20LZTM
ON SemiconductorTrans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD10N20LZTM)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.2539
  • 5000:$0.2519
  • 10000:$0.2489
  • 15000:$0.2459
  • 25000:$0.2399
FDD10N20LZTM
DISTI # FDD10N20LZTM
ON SemiconductorTrans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.3579
  • 5000:€0.2929
  • 10000:€0.2679
  • 15000:€0.2479
  • 25000:€0.2299
FDD10N20LZTM
DISTI # FDD10N20LZTM
ON SemiconductorTrans MOSFET N-CH 200V 7.6A 3-Pin(2+Tab) DPAK T/R (Alt: FDD10N20LZTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
  • 2500:$0.2650
  • 5000:$0.2548
  • 7500:$0.2453
  • 12500:$0.2366
  • 25000:$0.2284
  • 62500:$0.2208
  • 125000:$0.2172
FDD10N20LZTM
DISTI # 27T6420
ON SemiconductorUF 200V 360MOHM L DPAK / REEL0
  • 1:$0.3020
  • 2500:$0.3000
  • 10000:$0.2890
  • 25000:$0.2800
FDD10N20LZTM
DISTI # 46AC0763
ON SemiconductorMOSFET, N-CH, 200V, 7.6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2182
  • 1:$1.0000
  • 10:$0.8210
  • 25:$0.7280
  • 50:$0.6500
  • 100:$0.5600
  • 250:$0.4950
  • 500:$0.3960
  • 1000:$0.3820
FDD10N20LZTM
DISTI # 512-FDD10N20LZTM
ON SemiconductorMOSFET 200V N-Channel MOSFET, UniFET
RoHS: Compliant
5208
  • 1:$0.8000
  • 10:$0.6610
  • 100:$0.4270
  • 1000:$0.3420
  • 2500:$0.2880
  • 10000:$0.2780
  • 25000:$0.2670
FDD10N20LZTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Compliant
214732
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3300
  • 1:$0.3600
FDD10N20LZTM
DISTI # 2825151
ON SemiconductorMOSFET, N-CH, 200V, 7.6A, TO-252-3
RoHS: Compliant
2182
  • 5:$1.2500
  • 25:$1.0700
  • 100:$0.7310
  • 250:$0.6000
  • 500:$0.4910
  • 1000:$0.4540
  • 5000:$0.4280
FDD10N20LZTM
DISTI # 2825151
ON SemiconductorMOSFET, N-CH, 200V, 7.6A, TO-252-3
RoHS: Compliant
2187
  • 5:£0.7300
  • 25:£0.6530
  • 100:£0.5040
  • 250:£0.4390
  • 500:£0.3730
Imagen Parte # Descripción
LM358ADR

Mfr.#: LM358ADR

OMO.#: OMO-LM358ADR

Operational Amplifiers - Op Amps Dual Op Amp
FL7760BM6X

Mfr.#: FL7760BM6X

OMO.#: OMO-FL7760BM6X

LED Lighting Drivers ANALOG/PWM 60V BUCK CONTRLR
1N4148WS

Mfr.#: 1N4148WS

OMO.#: OMO-1N4148WS

Diodes - General Purpose, Power, Switching Small Signal Diode
1N5819HW-7-F

Mfr.#: 1N5819HW-7-F

OMO.#: OMO-1N5819HW-7-F

Schottky Diodes & Rectifiers Vr/40V Io/1A T/R
UC3524ADWTR

Mfr.#: UC3524ADWTR

OMO.#: OMO-UC3524ADWTR

Switching Controllers Advanced Regulating
PGA460TPWRQ1

Mfr.#: PGA460TPWRQ1

OMO.#: OMO-PGA460TPWRQ1

Analog Front End - AFE Automotive ultrasonic signal processor and transducer driver 16-TSSOP -40 to 105
AD8553ARMZ

Mfr.#: AD8553ARMZ

OMO.#: OMO-AD8553ARMZ-ANALOG-DEVICES-INC-ADI

Instrumentation Amplifiers 1.8V to 5V Auto-Zero w/ Shutdown
R1580N001A-TR-FE

Mfr.#: R1580N001A-TR-FE

OMO.#: OMO-R1580N001A-TR-FE-176

LED Lighting Drivers Flickerless by linear output, Input voltage 3.6V to 34.0V, PWM Duty Accuracy =1.0%
LM358ADR

Mfr.#: LM358ADR

OMO.#: OMO-LM358ADR-TEXAS-INSTRUMENTS

Operational Amplifiers - Op Amps Dual Op Amp
PGA460TPWRQ1

Mfr.#: PGA460TPWRQ1

OMO.#: OMO-PGA460TPWRQ1-TEXAS-INSTRUMENTS

IC ULTRASONIC SENSOR 16-TSSOP
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de FDD10N20LZTM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,80 US$
0,80 US$
10
0,66 US$
6,61 US$
100
0,43 US$
42,70 US$
1000
0,34 US$
342,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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