BSC097N06NSATMA1

Mfr. #:: BSC097N06NSATMA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-CH 60V 46A TDSON-8
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: BSC097N06NSATMA1 Ficha de datos
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Más información:: BSC097N06NSATMA1 más información

Atributo del producto
Valor de atributo

Fabricante: Infineon Technologies

categoria de producto: Transistores - FET, MOSFET - Sencillo

embalaje: Carrete

Alias de parte: BSC097N06NS SP001067004

Estilo de montaje: SMD / SMT

Nombre comercial: OptiMOS

Paquete-Estuche: TDSON-8

Tecnología: Si

Número de canales: 1 Channel

Configuración: Único

Tipo transistor: 1 N-Channel

Disipación de potencia Pd: 36 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 2 ns

Hora de levantarse: 2 ns

Vgs-Puerta-Fuente-Voltaje: +/- 20 V

Id-corriente-de-drenaje-continua: 46 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.8 V

Resistencia a la fuente de desagüe de Rds: 9.7 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 10 ns

Tiempo de retardo de encendido típico: 6 ns

Qg-Gate-Charge: 12 nC

Transconductancia directa-Mín.: 48 S

Modo de canal: Mejora

Tags: BSC097, BSC09, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC097N06NSATMA1 Más información

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
BSC097N06NSATMA1 DISTI # V72:2272_06384807	Infineon Technologies AG	Trans MOSFET N-CH 60V 46A 8-Pin TDSON T/R RoHS: Compliant	4575	3000:$0.3684 1000:$0.3721 500:$0.4479 250:$0.4984 100:$0.5470 25:$0.6311 10:$0.6755 1:$0.7455
BSC097N06NSATMA1 DISTI # BSC097N06NSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 46A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4970In Stock	1000:$0.4249 500:$0.5382 100:$0.6940 10:$0.8780 1:$0.9900
BSC097N06NSATMA1 DISTI # BSC097N06NSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 46A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4970In Stock	1000:$0.4249 500:$0.5382 100:$0.6940 10:$0.8780 1:$0.9900
BSC097N06NSATMA1 DISTI # BSC097N06NSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 46A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.3658
BSC097N06NSATMA1 DISTI # 31084170	Infineon Technologies AG	Trans MOSFET N-CH 60V 46A 8-Pin TDSON T/R RoHS: Compliant	4575	3000:$0.3684 1000:$0.3721 500:$0.4479 250:$0.4984 100:$0.5470 25:$0.6310 23:$0.6755
BSC097N06NSATMA1 DISTI # BSC097N06NSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 46A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC097N06NSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.2879 10000:$0.2769 20000:$0.2669 30000:$0.2579 50000:$0.2539
BSC097N06NSATMA1 DISTI # 97Y1250	Infineon Technologies AG	MOSFET, N-CH, 60V, 46A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:46A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	0	1:$0.8300 10:$0.7000 25:$0.6460 50:$0.5920 100:$0.5380 250:$0.5070 500:$0.4760 1000:$0.3750
BSC097N06NSATMA1 DISTI # 726-BSC097N06NSATMA1	Infineon Technologies AG	MOSFET N-Ch 60V 46A TDSON-8 RoHS: Compliant	4602	1:$0.8300 10:$0.7000 100:$0.5380 500:$0.4760 1000:$0.3750 5000:$0.3330
BSC097N06NS DISTI # 726-BSC097N06NS	Infineon Technologies AG	MOSFET N-Ch 60V 46A TDSON-8 RoHS: Compliant	0	1:$0.8300 10:$0.7000 100:$0.5380 500:$0.4760 1000:$0.3750 5000:$0.3330
BSC097N06NSATMA1	Infineon Technologies AG	Single N-Channel 60 V 9.7 mOhm 12 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Compliant	5000Reel	5000:$0.3100
BSC097N06NSATMA1 DISTI # 1109115P	Infineon Technologies AG	MOSFET N-CHAN OPTIMOS 60V 46A TDSON8, RL	825	50:£0.4590 250:£0.3890 500:£0.3440 1250:£0.2870
BSC097N06NSATMA1 DISTI # BSC097N06NSATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,46A,36W,PG-TDSON-8	2250	1:$0.6244 3:$0.5530 10:$0.4649 100:$0.4167 1000:$0.3880
BSC097N06NSATMA1 DISTI # 2617474	Infineon Technologies AG	MOSFET, N-CH, 60V, 46A, PG-TDSON-8 RoHS: Compliant	0	1:$1.5800 10:$1.4000 100:$1.1100 500:$0.8580 1000:$0.6780
BSC097N06NSATMA1 DISTI # 2617474	Infineon Technologies AG	MOSFET, N-CH, 60V, 46A, PG-TDSON-8 RoHS: Compliant	0	5:£0.6020 25:£0.4640 100:£0.4110 250:£0.3930 500:£0.3470

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: BSC097N06NSATMA1 OMO.#: OMO-BSC097N06NSATMA1	MOSFET N-Ch 60V 46A TDSON-8
	Mfr.#: BSC097N06NS OMO.#: OMO-BSC097N06NS	MOSFET N-Ch 60V 46A TDSON-8
	Mfr.#: BSC097N06NSTATMA1 OMO.#: OMO-BSC097N06NSTATMA1	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSC097N06NS OMO.#: OMO-BSC097N06NS-1190	Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP (Alt: BSC097N06NS)
	Mfr.#: BSC097N06NSATMA1 OMO.#: OMO-BSC097N06NSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 46A TDSON-8
	Mfr.#: BSC097N06NSTATMA1 OMO.#: OMO-BSC097N06NSTATMA1-INFINEON-TECHNOLOGIES	DIFFERENTIATED MOSFETS

Disponibilidad

Valores:: Available
En orden:: 2500
Ingrese la cantidad:

El precio actual de BSC097N06NSATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,38 US$~~; ~~0,38 US$~~

10: ~~0,36 US$~~; ~~3,62 US$~~

100: ~~0,34 US$~~; ~~34,28 US$~~

500: ~~0,32 US$~~; ~~161,85 US$~~

1000: ~~0,30 US$~~; ~~304,70 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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BSC097N06NSATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes