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FGY120T65SPD-F085

FGY120T65SPD-F085
Mfr. #:
FGY120T65SPD-F085
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 650V FS Trench IGBT Gen3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGY120T65SPD-F085 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGY120T65SPD-F085 más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.5 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
240 A
Pd - Disipación de energía:
882 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
FGY120T65S_F085
Calificación:
AEC-Q101
Embalaje:
Tubo
Corriente continua de colector Ic Max:
240 A
Marca:
ON Semiconductor / Fairchild
Corriente de fuga puerta-emisor:
+/- 250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Parte # Alias:
FGY120T65SPD_F085
Unidad de peso:
0.215171 oz
Tags
FGY120T65SP, FGY120, FGY12, FGY1, FGY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Hybrid and Electric Vehicle Solutions
ON Semiconductor Hybrid and Electric Vehicle Solutions offer easy-to-use, highly flexible, and high-performance EV/HEV solutions for powertrain and other power storage systems.ON Semiconductor has a full portfolio of MOSFETs, rectifiers and IGBTs. Applications include electrically driven A/C compressors, EV/HEV DC-DC converters, EV/HEV onboard chargers and EV/HEV traction inverters.Learn More
Parte # Mfg. Descripción Valores Precio
FGY120T65SPD-F085
DISTI # V99:2348_16116327		ON SemiconductorFS3 T TP247 120A650V AUTO56
  • 500:$6.8870
  • 250:$7.4300
  • 100:$7.8910
  • 25:$9.2210
  • 10:$9.5210
  • 1:$10.4450
FGY120T65SPD-F085
DISTI # FGY120T65SPD-F085OS-ND		ON SemiconductorIGBT 650V 240A 882W TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		373In Stock
  • 900:$7.9344
  • 450:$8.4816
  • 25:$10.1232
  • 10:$10.5610
  • 1:$11.4900
FGY120T65SPD-F085
DISTI # 25944275		ON SemiconductorFS3 T TP247 120A650V AUTO56
  • 1:$10.4450
FGY120T65SPD_F085
DISTI # FGY120T65SPD-F085		ON SemiconductorTrans IGBT Chip N-CH 650V 240A 3-Pin TO-247 Tube (Alt: FGY120T65SPD-F085)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€6.3900
  • 500:€6.4900
  • 100:€6.6900
  • 50:€6.7900
  • 25:€7.1900
  • 10:€7.3900
  • 1:€9.1900
FGY120T65SPD_F085
DISTI # FGY120T65SPD-F085		ON SemiconductorTrans IGBT Chip N-CH 650V 240A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGY120T65SPD-F085)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$6.3900
  • 2700:$6.4900
  • 1800:$6.5900
  • 900:$6.6900
  • 450:$6.7900
FGY120T65SPD-F085
DISTI # 48AC1126		ON SemiconductorFS3 T TP247 120A650V AUTO / TUBE0
  • 500:$9.0400
  • 250:$9.6400
  • 100:$10.3400
  • 50:$11.2400
  • 1:$12.3400
FGY120T65SPD-F085
DISTI # 512-FGY120T65SPDF085		ON SemiconductorIGBT Transistors 650V FS Trench IGBT Gen3
RoHS: Compliant		456
  • 1:$10.9400
  • 10:$10.0600
  • 25:$9.6400
  • 100:$8.4900
  • 250:$8.0800
  • 500:$7.5600
  • 1000:$6.9300
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OMO.#: OMO-FGH75T65SQDT-F155

 IGBT Transistors 650V 40A FS4 TRENCH IGBT
FGY160T65SPD-F085

Mfr.#: FGY160T65SPD-F085

OMO.#: OMO-FGY160T65SPD-F085

 IGBT Transistors 650V Field Stop Gen3 Trench IGBT
NVMFS6H818NWFT1G

Mfr.#: NVMFS6H818NWFT1G

OMO.#: OMO-NVMFS6H818NWFT1G

 MOSFET TRENCH 8 80V NFET POWER MOSFET
SIHP22N60AEL-GE3

Mfr.#: SIHP22N60AEL-GE3

OMO.#: OMO-SIHP22N60AEL-GE3

 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP22N60AEL-GE3

Mfr.#: SIHP22N60AEL-GE3

OMO.#: OMO-SIHP22N60AEL-GE3-VISHAY

 MOSFET N-CHAN 600V
FGH75T65SQDT-F155

Mfr.#: FGH75T65SQDT-F155

OMO.#: OMO-FGH75T65SQDT-F155-ON-SEMICONDUCTOR

 650V 75A FS4 TRENCH IGBT
3974

Mfr.#: 3974

OMO.#: OMO-3974-ADAFRUIT

 Ad Blocking Kit for Pi-Hole with 2.8 PiTFT - No Soldering! - No Raspberry Pi Included
NVMFS6H818NWFT1G

Mfr.#: NVMFS6H818NWFT1G

OMO.#: OMO-NVMFS6H818NWFT1G-ON-SEMICONDUCTOR

 Power MOSFET 80 V, 3.7 mW, 123 A, Single N-Channel
Disponibilidad
Valores:
456
En orden:
2439
Ingrese la cantidad:
El precio actual de FGY120T65SPD-F085 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
10,94 US$
10,94 US$
10
10,06 US$
100,60 US$
25
9,64 US$
241,00 US$
100
8,49 US$
849,00 US$
250
8,08 US$
2 020,00 US$
500
7,56 US$
3 780,00 US$
1000
6,93 US$
6 930,00 US$
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