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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPW50R299CPFKSA1 DISTI # IPW50R299CPFKSA1-ND | Infineon Technologies AG | MOSFET N-CH 550V 12A TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube | Limited Supply - Call | |
| IPW50R299CP DISTI # IPW50R299CP | Infineon Technologies AG | Trans MOSFET N-CH 500V 12A 3-Pin TO-247 Tube - Bulk (Alt: IPW50R299CP) RoHS: Not Compliant Min Qty: 261 Container: Bulk | Americas - 0 |
|
| IPW50R299CPFKSA1 DISTI # IPW50R299CPFKSA1 | Infineon Technologies AG | - Bulk (Alt: IPW50R299CPFKSA1) Min Qty: 261 Container: Bulk | Americas - 0 |
|
| IPW50R299CP DISTI # 726-IPW50R299CP | Infineon Technologies AG | MOSFET N-Ch 500V 12A TO247-3 CoolMOS CP RoHS: Compliant | 185 |
|
| IPW50R299CPFKSA1 DISTI # N/A | Infineon Technologies AG | MOSFET LOW POWER_LEGACY | 0 | |
| IPW50R299CP | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS: Compliant | 9838 |
|
| IPW50R299CPFKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS: Compliant | 140 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: W50R299CP OMO.#: OMO-W50R299CP-1190 |
Nuevo y original |