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IPI020N06NAKSA1

IPI020N06NAKSA1
Mfr. #:
IPI020N06NAKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 60V 29A TO262-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPI020N06NAKSA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPI020N06NAKSA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IPI020N06
embalaje
Tubo
Alias ​​de parte
IPI020N06N IPI020N06NXK SP000962132
Unidad de peso
0.084199 oz
Estilo de montaje
A través del orificio
Nombre comercial
OptiMOS
Paquete-Estuche
TO-262-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
214 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
19 ns
Hora de levantarse
45 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
120 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Source-Threshold-Voltage
2.8 V
Resistencia a la fuente de desagüe de Rds
2 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
51 ns
Tiempo de retardo de encendido típico
24 ns
Qg-Gate-Charge
106 nC
Transconductancia directa-Mín.
210 S
Tags
IPI020, IPI02, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube
***p One Stop Global
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262
***et Europe
Trans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube
***i-Key
MOSFET N-CH 60V 29A TO262-3
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Parte # Mfg. Descripción Valores Precio
IPI020N06NAKSA1
DISTI # V36:1790_06378389		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		0
    IPI020N06NAKSA1
    DISTI # IPI020N06NAKSA1-ND    		Infineon Technologies AGMOSFET N-CH 60V 29A TO262-3
    RoHS: Compliant
    Min Qty: 500
    Container: Bulk    		Temporarily Out of Stock
    • 500:$2.8685
    IPI020N06NAKSA1
    DISTI # IPI020N06NAKSA1    		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube - Bulk (Alt: IPI020N06NAKSA1)
    RoHS: Compliant
    Min Qty: 178
    Container: Bulk    		Americas - 0
    • 174:$1.9900
    • 176:$1.8900
    • 350:$1.7900
    • 870:$1.7900
    • 1740:$1.6900
    IPI020N06NAKSA1
    DISTI # IPI020N06NAKSA1    		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI020N06NAKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 500:$2.1900
    • 1000:$2.0900
    • 2000:$2.0900
    • 3000:$1.9900
    • 5000:$1.8900
    IPI020N06NAKSA1
    DISTI # SP000962132    		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-262 Tube (Alt: SP000962132)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€2.2900
    • 10:€2.0900
    • 25:€1.9900
    • 50:€1.8900
    • 100:€1.7900
    • 500:€1.7900
    • 1000:€1.6900
    IPI020N06NAKSA1
    DISTI # 726-IPI020N06NAKSA1    		Infineon Technologies AGMOSFET N-Ch 60V 120A I2PAK-3
    RoHS: Compliant    		491
    • 1:$4.1500
    • 10:$3.5300
    • 100:$3.0600
    • 250:$2.9000
    • 500:$2.6000
    • 1000:$2.2000
    • 2500:$2.0900
    IPI020N06NAKSA1Infineon Technologies AGPower Field-Effect Transistor, 29A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RoHS: Compliant    		19420
    • 1000:$1.8600
    • 500:$1.9500
    • 100:$2.0300
    • 25:$2.1200
    • 1:$2.2800
    Imagen Parte # Descripción
    IPI020N06NAKSA1

    Mfr.#: IPI020N06NAKSA1

    OMO.#: OMO-IPI020N06NAKSA1

    		 MOSFET N-Ch 60V 120A I2PAK-3
    IPI020N06N

    Mfr.#: IPI020N06N

    OMO.#: OMO-IPI020N06N-1190

    		 Nuevo y original
    IPI020N06NAKSA1

    Mfr.#: IPI020N06NAKSA1

    OMO.#: OMO-IPI020N06NAKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 29A TO262-3
    IPI020N06NG

    Mfr.#: IPI020N06NG

    OMO.#: OMO-IPI020N06NG-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de IPI020N06NAKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,54 US$
    2,54 US$
    10
    2,41 US$
    24,08 US$
    100
    2,28 US$
    228,15 US$
    500
    2,15 US$
    1 077,40 US$
    1000
    2,03 US$
    2 028,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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