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FDP8447L

FDP8447L
Mfr. #:
FDP8447L
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 40V N-CH PowerTrench MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDP8447L Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDP8447L más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
12 A
Rds On - Resistencia de la fuente de drenaje:
8.7 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FDP8447L
Tipo de transistor:
1 N-Channel
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
28 ns
Tiempo típico de retardo de encendido:
9 ns
Unidad de peso:
0.063493 oz
Tags
FDP84, FDP8, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 40V 12A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 40 V 8.7 mOhm PowerTrench® Mosfet - TO-220
***emi
N-Channel PowerTrench® MOSFET 40V, 50A, 8.7mΩ
*** Stop Electro
Power Field-Effect Transistor, 50A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N-CHANNEL POWERTRENCH MOSFET; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
***ment14 APAC
MOSFET, N CH, 40V, 50A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-220; Power Dissipation Pd:2W; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***i-Key
MOSFET N-CH 30V 75A TO220AB
***ser
MOSFETs- Power and Small Signal 30V 75A N-Channel
***el Electronic
20V PCH+PCH MIDDLE POWER MOSFET,
***et
Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Rail
***ser
MOSFETs- Power and Small Signal 30V 75A N-Channel No-Cancel/No-Return
***el Electronic
MOSFET N-CH 30V 75A TO220AB
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.009Ohm;ID 100A;TO-220AB;PD 170W;VGS +/-20V
***eco
Transistor MOSFET Negative Channel 40 Volt 100A 3-Pin(3+Tab) TO-220AB
***ure Electronics
Single N-Channel 40 V 0.009 Ohm 93 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 40V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:9mohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 40 V 3.3 mOhm 62 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 40V, 118A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDP8447L
DISTI # FDP8447L-ND		ON SemiconductorMOSFET N-CH 40V 12A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1020In Stock
  • 1600:$0.6641
  • 800:$0.7350
  • 100:$1.0847
  • 10:$1.3730
  • 1:$1.5500
FDP8447L
DISTI # FDP8447L		ON SemiconductorTrans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8447L)
RoHS: Compliant
Min Qty: 1600
Container: Tube		Asia - 0
    FDP8447L
    DISTI # FDP8447L    		ON SemiconductorTrans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP8447L)
    RoHS: Compliant
    Min Qty: 1600
    Container: Tube    		Americas - 0
    • 1600:$0.4569
    • 3200:$0.4539
    • 4800:$0.4479
    • 8000:$0.4429
    • 16000:$0.4319
    FDP8447L
    DISTI # FDP8447L    		ON SemiconductorTrans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8447L)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€0.7759
    • 10:€0.6889
    • 25:€0.6199
    • 50:€0.5639
    • 100:€0.5169
    • 500:€0.4769
    • 1000:€0.4429
    FDP8447L
    DISTI # 52M3195    		ON SemiconductorN CHANNEL MOSFET, 40V, 12A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,MSL:- RoHS Compliant: Yes0
    • 1:$1.4500
    • 10:$1.1300
    • 100:$0.8870
    • 1000:$0.6050
    • 2000:$0.6010
    • 10000:$0.5690
    • 24000:$0.5530
    • 50000:$0.5410
    FDP8447L
    DISTI # 512-FDP8447L    		ON SemiconductorMOSFET 40V N-CH PowerTrench MOSFET
    RoHS: Compliant    		1402
    • 1:$1.3300
    • 10:$1.1300
    • 100:$0.8660
    • 500:$0.7650
    • 1000:$0.6040
    FDP8447LFairchild Semiconductor CorporationPower Field-Effect Transistor, 50A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		8000
    • 1000:$0.7600
    • 500:$0.8000
    • 100:$0.8400
    • 25:$0.8700
    • 1:$0.9400
    Imagen Parte # Descripción
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    RS01A1R000FE70

    Mfr.#: RS01A1R000FE70

    OMO.#: OMO-RS01A1R000FE70

    		 Wirewound Resistors - Through Hole 1watt 1ohms 1%
    C310T-SC-2-R-TR1

    Mfr.#: C310T-SC-2-R-TR1

    OMO.#: OMO-C310T-SC-2-R-TR1

    		 Cartridge Fuses 2A 250V high I2t ceramic
    RS01A1R200FE70

    Mfr.#: RS01A1R200FE70

    OMO.#: OMO-RS01A1R200FE70-1098

    		 Wirewound Resistors - Through Hole 1watt 1.2ohms 1%
    RS01A1R000FE70

    Mfr.#: RS01A1R000FE70

    OMO.#: OMO-RS01A1R000FE70-VISHAY-DALE

    		 Wirewound Resistors - Through Hole 1watt 1ohms 1%
    VS-12TQ040-M3

    Mfr.#: VS-12TQ040-M3

    OMO.#: OMO-VS-12TQ040-M3-VISHAY

    		 DIODE SCHOTTKY 40V 15A TO220AC
    LM7805CT/NOPB

    Mfr.#: LM7805CT/NOPB

    OMO.#: OMO-LM7805CT-NOPB-TEXAS-INSTRUMENTS

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    Mfr.#: 2N5088

    OMO.#: OMO-2N5088-CENTRAL-SEMICONDUCTOR

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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de FDP8447L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,33 US$
    1,33 US$
    10
    1,13 US$
    11,30 US$
    100
    0,87 US$
    86,60 US$
    500
    0,76 US$
    382,50 US$
    1000
    0,60 US$
    604,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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