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IGP40N65H5XKSA1

IGP40N65H5XKSA1
Mfr. #:
IGP40N65H5XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors IGBT PRODUCTS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGP40N65H5XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IGP40N65H5XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.65 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
74 A
Pd - Disipación de energía:
250 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP 5 H5
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
500
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IGP40N65H5 SP001001738
Unidad de peso:
0.070548 oz
Tags
IGP40N65H, IGP4, IGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 74A 3-Pin TO-220 Tube
***ronik
IGBT 650V 40A 1,65V TO220-3
***ark
IGBT, 650V, 40A, TO220-3
***i-Key
IGBT 650V 74A 255W PG-TO247-3
***ukat
650V 74A 255W TO220
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, TO220-3; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:255W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT
***nell
IGBT, 650V, 40A, TO220-3; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:255W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Parte # Mfg. Descripción Valores Precio
IGP40N65H5XKSA1
DISTI # IGP40N65H5XKSA1-ND		Infineon Technologies AGIGBT 650V 74A 255W PG-TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		88In Stock
  • 10:$2.7550
  • 1:$3.0700
IGP40N65H5XKSA1
DISTI # IGP40N65H5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-220 Tube - Rail/Tube (Alt: IGP40N65H5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.4900
  • 1000:$1.4900
  • 2000:$1.3900
  • 3000:$1.3900
  • 5000:$1.3900
IGP40N65H5XKSA1
DISTI # SP001001738		Infineon Technologies AGTrans IGBT Chip N-CH 650V 74A 3-Pin TO-220 Tube (Alt: SP001001738)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.6900
  • 10:€1.4900
  • 25:€1.3900
  • 50:€1.2900
  • 100:€1.2900
  • 500:€1.1900
  • 1000:€1.1900
IGP40N65H5XKSA1
DISTI # 33X0398		Infineon Technologies AGIGBT Single Transistor, 40 A, 1.65 V, 255 W, 650 V, TO-220, 3 , RoHS Compliant: Yes280
  • 1:$2.9000
  • 10:$2.4600
  • 100:$1.9700
  • 500:$1.7200
  • 1000:$1.4300
  • 2500:$1.3300
  • 5000:$1.2800
IGP40N65H5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant		900
  • 1000:$1.3400
  • 500:$1.4100
  • 100:$1.4700
  • 25:$1.5300
  • 1:$1.6500
IGP40N65H5
DISTI # 726-IGP40N65H5-ES		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant		983
  • 1:$2.9200
  • 10:$2.4900
  • 100:$2.1600
  • 250:$2.0400
  • 500:$1.8400
IGP40N65H5XKSA1
DISTI # 726-IGP40N65H5XKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		911
  • 1:$2.9000
  • 10:$2.4600
  • 100:$1.9700
  • 500:$1.7200
IGP40N65H5XKSA1
DISTI # IGP40N65H5XKSA1		Infineon Technologies AGTransistor: IGBT,650V,74A,250W,TO220-3,Series: H5135
  • 1:$2.5800
  • 5:$2.2300
  • 25:$1.7900
  • 100:$1.6600
IGP40N65H5XKSA1
DISTI # IGP40N65H5		Infineon Technologies AG650V 74A 255W TO220
RoHS: Compliant		419
  • 1:€5.4500
  • 10:€2.4500
  • 50:€1.4500
  • 100:€1.3300
IGP40N65H5XKSA1
DISTI # 2363275		Infineon Technologies AGIGBT, 650V, 40A, TO220-3
RoHS: Compliant		280
  • 1:£2.7800
  • 10:£2.0900
  • 100:£1.6700
  • 250:£1.5700
  • 500:£1.4600
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Disponibilidad
Valores:
774
En orden:
2757
Ingrese la cantidad:
El precio actual de IGP40N65H5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,91 US$
2,91 US$
10
2,48 US$
24,80 US$
100
2,15 US$
215,00 US$
250
2,04 US$
510,00 US$
500
1,83 US$
915,00 US$
1000
1,54 US$
1 540,00 US$
2500
1,46 US$
3 650,00 US$
5000
1,41 US$
7 050,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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