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IRFHM830DTRPBF

IRFHM830DTRPBF
Mfr. #:
IRFHM830DTRPBF
Fabricante:
Infineon Technologies
Descripción:
Darlington Transistors MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFHM830DTRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Rectificador internacional
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Estilo de montaje
SMD / SMT
Paquete-Estuche
PQFN-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.8 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
6.7 ns
Hora de levantarse
20 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
20 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.8 V
Resistencia a la fuente de desagüe de Rds
5.7 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
9.1 ns
Tiempo de retardo de encendido típico
9.8 ns
Qg-Gate-Charge
13 nC
Transconductancia directa-Mín.
69 S
Modo de canal
Mejora
Tags
IRFHM830DT, IRFHM830D, IRFHM830, IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3
***ment14 APAC
MOSFET,N CH,SCH DIODE,30V,20A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:2.8W; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Schottky intrinsic diode with low forward voltage; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***Yang
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ernational Rectifier
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 25V, 51A, 6 mOhm, 7 nC Qg, Low Rg, PQFN
***ment14 APAC
MOSFET, N CH, 25V, 51A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Power Dissipation Pd:26W; Voltage Vgs Max:20V
*** Electronics
INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
***roFlash
Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
*** Source Electronics
Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN
***Yang
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Operated Drive; Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37
Parte # Mfg. Descripción Valores Precio
IRFHM830DTRPBF
DISTI # V72:2272_13891074		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
RoHS: Compliant		1703
  • 75000:$0.5489
  • 30000:$0.5491
  • 15000:$0.5499
  • 6000:$0.5558
  • 3000:$0.5616
  • 1000:$0.5633
  • 500:$0.5860
  • 250:$0.6596
  • 100:$0.7208
  • 50:$0.7680
  • 25:$0.8785
  • 10:$0.9017
  • 1:$1.0073
IRFHM830DTRPBF
DISTI # IRFHM830DTRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 20A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRFHM830DTRPBF
    DISTI # 26196361    		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
    RoHS: Compliant    		1703
    • 1000:$0.5633
    • 500:$0.5860
    • 250:$0.6596
    • 100:$0.7208
    • 50:$0.7680
    • 25:$0.8785
    • 14:$0.9017
    IRFHM830DTRPBF
    DISTI # 70019948    		Infineon Technologies AGMOSFET,30V,40A,4.3 MOHM,13 NC QG,1.1 OHM RG,MONOFETKY,PQFN 3.3X3.3
    RoHS: Compliant    		0
    • 4000:$1.5400
    • 8000:$1.5090
    • 20000:$1.4630
    • 40000:$1.4010
    • 100000:$1.3090
    IRFHM830DTRPBF
    DISTI # 942-IRFHM830DTRPBF    		Infineon Technologies AGMOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG
    RoHS: Compliant    		0
      IRFHM830DTRPBFInternational Rectifier 576
      • 501:$1.0712
      • 232:$1.2010
      • 1:$2.5968
      IRFHM830DTRPBF
      DISTI # 1857345      		Infineon Technologies AGMOSFET,N CH,SCH DIODE,30V,20A,PQFN33
      RoHS: Compliant      		0
      • 1:$1.9100
      • 10:$1.6100
      • 100:$1.2500
      • 500:$1.1100
      • 1000:$0.9440
      IRFHM830DTRPBF
      DISTI # C1S322000595279      		Infineon Technologies AGTrans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
      RoHS: Compliant      		1703
      • 100:$0.7208
      • 50:$0.7680
      • 25:$0.8785
      • 10:$0.9017
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      OMO.#: OMO-IRFHM830DTRPBF--1190

      		 Nuevo y original
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      IRFHM8330TRPBF

      Mfr.#: IRFHM8330TRPBF

      OMO.#: OMO-IRFHM8330TRPBF-INFINEON-TECHNOLOGIES

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      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de IRFHM830DTRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,65 US$
      0,65 US$
      10
      0,62 US$
      6,22 US$
      100
      0,59 US$
      58,91 US$
      500
      0,56 US$
      278,20 US$
      1000
      0,52 US$
      523,70 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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