SIR424DP-T1-GE3

Name: Vishay - SIR424DP-T1-GE3
Brand: Vishay
SKU: OMO-3946144
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIR424DP-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET N-CH 20V 30A PPAK SO-8
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SIR424DP-T1-GE3 Ficha de datos
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Más información:: SIR424DP-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SIR424DP-GE3

Unidad de peso: 0.017870 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: PowerPAKR SO-8

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: PowerPAKR SO-8

Configuración: Fuente triple de drenaje cuádruple simple

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 41.7W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 20V

Entrada-Capacitancia-Ciss-Vds: 1250pF @ 10V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 30A (Tc)

Rds-On-Max-Id-Vgs: 5.5 mOhm @ 20A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Puerta-Carga-Qg-Vgs: 35nC @ 10V

Disipación de potencia Pd: 4.8 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 10 ns

Hora de levantarse: 12 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 30 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.5 V

Resistencia a la fuente de desagüe de Rds: 4.6 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 23 ns

Tiempo de retardo de encendido típico: 18 ns

Qg-Gate-Charge: 22 nC

Transconductancia directa-Mín.: 80 S

Modo de canal: Mejora

Tags: SIR42, SIR4, SIR

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We provide 90-360 days warranty.

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SIR424DP-T1-GE3 Descripción

***ied Electronics & Automation: SIR424DP-T1-GE3 N-channel MOSFET Transistor; 23 A; 20 V; 8-Pin PowerPAK SO

***ure Electronics: SiR172DP Series N-Channel 20 V 0.0074 Ohm 41.7 W SMT Mosfet - PowerPAK® SO-8

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.0046Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:41.7W; No. Of Pins:8Pins Rohs Compliant: Yes

SIR424DP-T1-GE3 Más información

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SIR424DP-T1-GE3 DISTI # V72:2272_07432057	Vishay Intertechnologies	Trans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R	2810	1000:$0.4094 500:$0.4629 250:$0.5056 100:$0.5225 25:$0.6391 10:$0.6415 1:$0.7429
SIR424DP-T1-GE3 DISTI # SIR424DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 30A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2073In Stock	1000:$0.4589 500:$0.5812 100:$0.7495 10:$0.9480 1:$1.0700
SIR424DP-T1-GE3 DISTI # SIR424DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 30A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2073In Stock	1000:$0.4589 500:$0.5812 100:$0.7495 10:$0.9480 1:$1.0700
SIR424DP-T1-GE3 DISTI # SIR424DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 30A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.4158
SIR424DP-T1-GE3 DISTI # 27490183	Vishay Intertechnologies	Trans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R	3000	3000:$0.4382
SIR424DP-T1-GE3 DISTI # 28976247	Vishay Intertechnologies	Trans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R	2810	1000:$0.4094 500:$0.4629 250:$0.5056 100:$0.5225 25:$0.6391 17:$0.6415
SIR424DP-T1-GE3 DISTI # SIR424DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R (Alt: SIR424DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.7809 6000:€0.5599 12000:€0.4539 18000:€0.4009 30000:€0.3839
SIR424DP-T1-GE3 DISTI # SIR424DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR424DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3929 6000:$0.3809 12000:$0.3649 18000:$0.3549 30000:$0.3459
SIR424DP-T1-GE3 DISTI # 70AC6481	Vishay Intertechnologies	Trans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 70AC6481) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.0700 25:$0.9480 50:$0.8490 100:$0.7490 250:$0.6650 500:$0.5810 1000:$0.4580
SIR424DP-T1-GE3 DISTI # 70AC6481	Vishay Intertechnologies		3000	1:$1.0700 25:$0.9480 50:$0.8490 100:$0.7490 250:$0.6650 500:$0.5810 1000:$0.4580
SIR424DP-T1-GE3 DISTI # 15R4881	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET	0	1:$0.4500 3000:$0.4500
SIR424DP-T1-GE3. DISTI # 30AC0117	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: YES	0	1:$0.4500 3000:$0.4500
SIR424DP-T1-GE3 DISTI # 70616563	Vishay Siliconix	SIR424DP-T1-GE3 N-channel MOSFET Transistor,23 A,20 V,8-Pin PowerPAK SO RoHS: Compliant	0	300:$0.5100 600:$0.5000 1500:$0.4900 3000:$0.4800
SIR424DP-T1-GE3 DISTI # 781-SIR424DP-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	3647	1:$0.9500 10:$0.7780 100:$0.5970 500:$0.5140 1000:$0.4500
SIR424DP-T1-GE3 DISTI # 2646399	Vishay Intertechnologies	MOSFET, N-CH, 20V, 30A, POWERPAK SO RoHS: Compliant	0	1:$1.5100 10:$1.2300 100:$0.9450 500:$0.8140 1000:$0.7120 3000:$0.7120
SIR424DP-T1-GE3 DISTI # 2679709	Vishay Intertechnologies	MOSFET, N-CH, 20V, 30A, POWERPAK SO RoHS: Compliant	0	3000:$0.5700 6000:$0.5510 9000:$0.5410
SIR424DP-T1-GE3 DISTI # 2646399	Vishay Intertechnologies	MOSFET, N-CH, 20V, 30A, POWERPAK SO RoHS: Compliant	0	5:£0.6120 50:£0.5880 100:£0.4340 500:£0.3410 1500:£0.3260
SIR424DP-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas - 15000
SIR424DP-T1-GE3 DISTI # C1S803603788924	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	3000:$0.5020
SIR424DP-T1-GE3 DISTI # C1S803601945880	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2810	250:$0.5057 100:$0.5227 25:$0.6392 10:$0.6417

Productos relacionados

Imagen

Parte #

Descripción

Mfr.#: SIR424DP-T1-GE3

OMO.#: OMO-SIR424DP-T1-GE3

MOSFET 20V Vds 20V Vgs PowerPAK SO-8

Mfr.#: SIR424DP-T1-E3

OMO.#: OMO-SIR424DP-T1-E3-1190

Nuevo y original

Mfr.#: SIR424DP-T1-GE3

OMO.#: OMO-SIR424DP-T1-GE3-VISHAY

MOSFET N-CH 20V 30A PPAK SO-8

Disponibilidad

Valores:: Available
En orden:: 3000
Ingrese la cantidad:

El precio actual de SIR424DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,51 US$~~; ~~0,51 US$~~

10: ~~0,49 US$~~; ~~4,88 US$~~

100: ~~0,46 US$~~; ~~46,20 US$~~

500: ~~0,44 US$~~; ~~218,15 US$~~

1000: ~~0,41 US$~~; ~~410,60 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SIR42 19
SIR4 130
SIR 693

SIR424DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes