SISS08DN-T1-GE3

SISS08DN-T1-GE3
Mfr. #:
SISS08DN-T1-GE3
Fabricante:
Vishay
Descripción:
N-Channel 25 V (D-S) MOSFET PowerPAK 1212-8S 1G SG 2 mil , 1.23 m @ 10V m @ 7.5V 1.87 m @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISS08DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SISS08DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Tags
SISS0, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SISS08DN-T1-GE3
DISTI # V72:2272_22759347
Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET PowerPAK 1212-8S 1G SG 2 mil , 1.23 m @ 10Vm @ 7.5V 1.87 m @ 4.5V0
    SISS08DN-T1-GE3
    DISTI # SISS08DN-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CHAN 25 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    On Order
    • 15000:$0.4435
    • 6000:$0.4608
    • 3000:$0.4851
    SISS08DN-T1-GE3
    DISTI # SISS08DN-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CHAN 25 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS08DN-T1-GE3
    DISTI # SISS08DN-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CHAN 25 V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS08DN-T1-GE3
    DISTI # SISS08DN-T1-GE3
    Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET - Tape and Reel (Alt: SISS08DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel
    Americas - 0
    • 60000:$0.4229
    • 30000:$0.4339
    • 18000:$0.4469
    • 12000:$0.4659
    • 6000:$0.4799
    SISS08DN-T1-GE3
    DISTI # 81AC3500
    Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET0
    • 10000:$0.4200
    • 6000:$0.4290
    • 4000:$0.4460
    • 2000:$0.4950
    • 1000:$0.5450
    • 1:$0.5680
    SISS08DN-T1-GE3
    DISTI # 99AC9588
    Vishay IntertechnologiesMOSFET, N-CH, 25V, 195.5A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:195.5A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00102ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes50
    • 500:$0.6340
    • 250:$0.6860
    • 100:$0.7370
    • 50:$0.8120
    • 25:$0.8860
    • 10:$0.9610
    • 1:$1.1600
    SISS08DN-T1-GE3
    DISTI # 78-SISS08DN-T1-GE3
    Vishay IntertechnologiesMOSFET 25V Vds,20/-16V Vgs PowerPAK 1212-8S
    RoHS: Compliant
    0
    • 1:$1.1500
    • 10:$0.9510
    • 100:$0.7300
    • 500:$0.6280
    • 1000:$0.4950
    • 3000:$0.4620
    • 6000:$0.4390
    • 9000:$0.4230
    SISS08DN-T1-GE3
    DISTI # 3019138
    Vishay IntertechnologiesMOSFET, N-CH, 25V, 195.5A, 150DEG C
    RoHS: Compliant
    50
    • 100:$0.8610
    • 25:$1.1300
    • 5:$1.2600
    SISS08DN-T1-GE3
    DISTI # 3019138
    Vishay IntertechnologiesMOSFET, N-CH, 25V, 195.5A, 150DEG C50
    • 100:£0.6610
    • 10:£0.9290
    • 1:£1.1800
    Imagen Parte # Descripción
    SISS08DN-T1-GE3

    Mfr.#: SISS08DN-T1-GE3

    OMO.#: OMO-SISS08DN-T1-GE3

    MOSFET 25V Vds; 20/-16V Vgs PowerPAK 1212-8S
    SISS08DN-T1-GE3

    Mfr.#: SISS08DN-T1-GE3

    OMO.#: OMO-SISS08DN-T1-GE3-VISHAY

    N-Channel 25 V (D-S) MOSFET PowerPAK 1212-8S 1G SG 2 mil , 1.23 m @ 10V m @ 7.5V 1.87 m @ 4.5V
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de SISS08DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,63 US$
    0,63 US$
    10
    0,60 US$
    5,98 US$
    100
    0,57 US$
    56,70 US$
    500
    0,54 US$
    267,75 US$
    1000
    0,50 US$
    504,00 US$
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