STGW75M65DF2

STGW75M65DF2
Mfr. #:
STGW75M65DF2
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors PTD HIGH VOLTAGE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW75M65DF2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGW75M65DF2 más información STGW75M65DF2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.65 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
120 A
Pd - Disipación de energía:
468 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGW75M65DF2
Corriente continua de colector Ic Max:
120 A
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
+/- 250 uA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
600
Subcategoría:
IGBT
Unidad de peso:
0.211644 oz
Tags
STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Parte # Mfg. Descripción Valores Precio
STGW75M65DF2
DISTI # 497-16974-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
Min Qty: 1
Container: Tube
600In Stock
  • 2500:$2.9120
  • 500:$3.6254
  • 100:$4.2588
  • 25:$4.9140
  • 10:$5.1980
  • 1:$5.7900
STGW75M65DF2
DISTI # STGW75M65DF2
STMicroelectronicsTrans IGBT Chip N 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW75M65DF2)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
  • 6000:$2.5900
  • 3000:$2.6900
  • 1800:$2.7900
  • 1200:$2.8900
  • 600:$3.0900
STGW75M65DF2
DISTI # STGW75M65DF2
STMicroelectronicsTrans IGBT Chip N 650V 120A 3-Pin TO-247 Tube (Alt: STGW75M65DF2)
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€3.4900
  • 500:€3.6900
  • 100:€3.8900
  • 50:€3.9900
  • 25:€4.1900
  • 10:€4.3900
  • 1:€4.7900
STGW75M65DF2
DISTI # 20AC4225
STMicroelectronicsPTD HIGH VOLTAGE
RoHS: Not Compliant
0
  • 1:$2.6000
STGW75M65DF2
DISTI # 511-STGW75M65DF2
STMicroelectronicsIGBT Transistors PTD HIGH VOLTAGE
RoHS: Compliant
585
  • 1:$5.5000
  • 10:$4.6800
  • 100:$4.0500
  • 250:$3.8400
  • 500:$3.4500
Imagen Parte # Descripción
HGTG30N60A4D

Mfr.#: HGTG30N60A4D

OMO.#: OMO-HGTG30N60A4D

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG30N60A4D

Mfr.#: HGTG30N60A4D

OMO.#: OMO-HGTG30N60A4D-ON-SEMICONDUCTOR

IGBT Transistors 600V N-Channel IGBT SMPS Series
Disponibilidad
Valores:
595
En orden:
2578
Ingrese la cantidad:
El precio actual de STGW75M65DF2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,50 US$
5,50 US$
10
4,68 US$
46,80 US$
100
4,05 US$
405,00 US$
250
3,84 US$
960,00 US$
500
3,45 US$
1 725,00 US$
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