DMN1019UFDE-7

Mfr. #:: DMN1019UFDE-7
Fabricante:: Diodes Incorporated
Descripción:: Darlington Transistors MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: DMN1019UFDE-7 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante: Diodos incorporados

categoria de producto: FET - Single

Serie: DMN10

embalaje: Embalaje alternativo de Digi-ReelR

Estilo de montaje: SMD / SMT

Paquete-Estuche: 6-UDFN Exposed Pad

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: U-DFN2020-6

Configuración: Único

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 690mW

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 12V

Entrada-Capacitancia-Ciss-Vds: 2425pF @ 10V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 11A (Ta)

Rds-On-Max-Id-Vgs: 10 mOhm @ 9.7A, 4.5V

Vgs-th-Max-Id: 800mV @ 250μA

Puerta-Carga-Qg-Vgs: 50.6nC @ 8V

Disipación de potencia Pd: 690 mW

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 16.8 ns

Hora de levantarse: 22.2 ns

Vgs-Puerta-Fuente-Voltaje: 8 V

Id-corriente-de-drenaje-continua: 11 A

Vds-Drain-Source-Breakdown-Voltage: 12 V

Vgs-th-Gate-Source-Threshold-Voltage: 0.8 V

Resistencia a la fuente de desagüe de Rds: 10 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 57.6 ns

Tiempo de retardo de encendido típico: 7.6 ns

Qg-Gate-Charge: 27.3 nC

Transconductancia directa-Mín.: 28 S

Modo de canal: Mejora

Tags: DMN1019, DMN101, DMN10, DMN1, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN1019UFDE-7 Descripción

***Components: In a Pack of 10, N-Channel MOSFET, 11 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMN1019UFDE-7

***ure Electronics: N-Channel 12 V 10 mOhm Enhancement Mode Mosfet - U-DFN2020-6

***ark: Mosfet Bvdss: 8V~24V U-Dfn2020-6 T&r 3K Rohs Compliant: Yes

***p One Stop Global: Trans MOSFET N-CH 12V 11A Automotive 6-Pin DFN EP T/R

***et Europe: Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R

***ied Electronics & Automation: MOSFET; N Channel; Trans; 12V 11A DFN6 EP

*** Source Electronics: MOSFET N CH 12V 11A U-DFN2020-6E

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: UDFN2020-6 Polarity: N Variants: Enhancement mode Power dissipation: 0.69 W

***ronik: N-CH.MOS 11A 12V U-DFN2020-6

Market price

Parte #	Mfg.	Descripción	Valores	Precio
DMN1019UFDE-7 DISTI # V72:2272_06697878	Zetex / Diodes Inc	Trans MOSFET N-CH 12V 11A Automotive 6-Pin DFN EP T/R RoHS: Compliant	2850	1000:$0.1492 500:$0.1949 250:$0.1970 100:$0.1990 25:$0.3296 10:$0.3330 1:$0.4084
DMN1019UFDE-7 DISTI # DMN1019UFDE-7DICT-ND	Diodes Incorporated	MOSFET N CH 12V 11A U-DFN2020-6E RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	587890In Stock	1000:$0.2089 500:$0.2645 100:$0.3533 10:$0.4640 1:$0.5500
DMN1019UFDE-7 DISTI # DMN1019UFDE-7DIDKR-ND	Diodes Incorporated	MOSFET N CH 12V 11A U-DFN2020-6E RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	587890In Stock	1000:$0.2089 500:$0.2645 100:$0.3533 10:$0.4640 1:$0.5500
DMN1019UFDE-7 DISTI # DMN1019UFDE-7DITR-ND	Diodes Incorporated	MOSFET N CH 12V 11A U-DFN2020-6E RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	582000In Stock	3000:$0.1867
DMN1019UFDE-7 DISTI # 29552926	Zetex / Diodes Inc	Trans MOSFET N-CH 12V 11A Automotive 6-Pin DFN EP T/R RoHS: Compliant	2850	500:$0.1949 250:$0.1970 100:$0.1990 32:$0.3296
DMN1019UFDE-7 DISTI # DMN1019UFDE-7	Diodes Incorporated	Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R - Tape and Reel (Alt: DMN1019UFDE-7) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	3000:$0.1399 6000:$0.1389 12000:$0.1389 18000:$0.1389 30000:$0.1379
DMN1019UFDE-7 DISTI # DMN1019UFDE-7	Diodes Incorporated	Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R (Alt: DMN1019UFDE-7) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.2339 6000:€0.1689 12000:€0.1579 18000:€0.1379 30000:€0.1289
DMN1019UFDE-7 DISTI # DMN1019UFDE-7	Diodes Incorporated	Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R (Alt: DMN1019UFDE-7) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
DMN1019UFDE-7 DISTI # 70438058	Diodes Incorporated	MOSFET,N Channel,Trans,12V 11A DFN6 EP RoHS: Compliant	0	50:$0.3700 250:$0.3200 1000:$0.2900 3000:$0.2600
DMN1019UFDE-7	Diodes Incorporated	N-Channel 12 V 10 mOhm Enhancement Mode Mosfet - U-DFN2020-6 RoHS: Compliant	72000Reel	3000:$0.1490 6000:$0.1480
DMN1019UFDE-7 DISTI # 621-DMN1019UFDE-7	Diodes Incorporated	MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K RoHS: Compliant	48014	1:$0.4300 10:$0.3540 100:$0.2160 1000:$0.1670 3000:$0.1430
DMN1019UFDE-7	Diodes Incorporated		2395
DMN1019UFDE-7	Diodes Incorporated		30000
DMN1019UFDE-7 DISTI # XSFP00000045104	Diodes Incorporated	RoHS: Compliant	36342	3000:$0.2980 36342:$0.2709
DMN1019UFDE-7 DISTI # C1S205700298892	Diodes Incorporated	Trans MOSFET N-CH 12V 11A Automotive 6-Pin DFN EP T/R RoHS: Compliant	9000	3000:$0.1890
DMN1019UFDE-7 DISTI # C1S205700298908	Diodes Incorporated	Trans MOSFET N-CH 12V 11A Automotive 6-Pin DFN EP T/R RoHS: Compliant	2850	250:$0.1970 100:$0.1990 25:$0.3296 10:$0.3330

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: DMN1019UFDE-7 OMO.#: OMO-DMN1019UFDE-7	MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
	Mfr.#: DMN1017UCP3-7 OMO.#: OMO-DMN1017UCP3-7	MOSFET MOSFETBVDSS: 8V-24V
	Mfr.#: DMN1014UFDF-7 OMO.#: OMO-DMN1014UFDF-7	MOSFET MOSFET BVDSS: 8V-24V
	Mfr.#: DMN1019USN-13 OMO.#: OMO-DMN1019USN-13	MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
	Mfr.#: DMN1016UCB6-7 OMO.#: OMO-DMN1016UCB6-7	MOSFET N-Ch Enh Mode FET 12Vdss 8Vgss 30A
	Mfr.#: DMN1019USN OMO.#: OMO-DMN1019USN-1190	Nuevo y original
	Mfr.#: DMN1019UVT-7 OMO.#: OMO-DMN1019UVT-7-DIODES	Darlington Transistors MOSFET 12V Enh Mode FET
	Mfr.#: DMN1019USN-7 OMO.#: OMO-DMN1019USN-7-DIODES	IGBT Transistors MOSFET 12V N-Ch Enh FET 2426pF 27.3nC
	Mfr.#: DMN1019UVT-13 OMO.#: OMO-DMN1019UVT-13-DIODES	MOSFET 12V Enh Mode FET
	Mfr.#: DMN1019USN-13 OMO.#: OMO-DMN1019USN-13-DIODES	MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W

Disponibilidad

Valores:: Available
En orden:: 2500
Ingrese la cantidad:

El precio actual de DMN1019UFDE-7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,17 US$~~; ~~0,17 US$~~

10: ~~0,16 US$~~; ~~1,61 US$~~

100: ~~0,15 US$~~; ~~15,24 US$~~

500: ~~0,14 US$~~; ~~71,95 US$~~

1000: ~~0,14 US$~~; ~~135,50 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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DMN1019UFDE-7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes