RJH1CF5RDPQ-80#T2

RJH1CF5RDPQ-80#T2
Mfr. #:
RJH1CF5RDPQ-80#T2
Fabricante:
Renesas Electronics
Descripción:
IGBT Transistors IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RJH1CF5RDPQ-80#T2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Electrónica Renesas
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Embalaje:
Tubo
Marca:
Electrónica Renesas
Sensible a la humedad:
Yes
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Tags
RJH1CF5RDPQ-8, RJH1CF5RD, RJH1CF5R, RJH1CF5, RJH1CF, RJH1C, RJH1, RJH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247A Tube
***ponent Stockers USA
50 A 1200 V N-CHANNEL IGBT TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
***ical
Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/25 FAST IGBT FSII T
***i-Key
IGBT FIELD STOP 1200V 50A TO247
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
***ical
Trans IGBT Chip N-CH 1200V 50A 179000mW 3-Pin(3+Tab) TO-247AD Tube
*** Source Electronics
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS | IGBT 1200V 50A 179W TO247
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***icroelectronics SCT
Trench gate field-stop IGBT, TO-247 long leads, Tube
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***ark
1200V/25 Fast Igbt Only Fsii To-247 / Tube
Imagen Parte # Descripción
RJH1CF5RDPQ-80#T2

Mfr.#: RJH1CF5RDPQ-80#T2

OMO.#: OMO-RJH1CF5RDPQ-80-T2

IGBT Transistors IGBT
RJH1CF5RDPQ-80-T2

Mfr.#: RJH1CF5RDPQ-80-T2

OMO.#: OMO-RJH1CF5RDPQ-80-T2-1190

Nuevo y original
RJH1CF5R

Mfr.#: RJH1CF5R

OMO.#: OMO-RJH1CF5R-1190

Nuevo y original
RJH1CF5RDPQ

Mfr.#: RJH1CF5RDPQ

OMO.#: OMO-RJH1CF5RDPQ-1190

Nuevo y original
RJH1CF5RDPQ,RJH1CF5RDPQ-

Mfr.#: RJH1CF5RDPQ,RJH1CF5RDPQ-

OMO.#: OMO-RJH1CF5RDPQ-RJH1CF5RDPQ--1190

Nuevo y original
RJH1CF5RDPQ-80

Mfr.#: RJH1CF5RDPQ-80

OMO.#: OMO-RJH1CF5RDPQ-80-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de RJH1CF5RDPQ-80#T2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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