FDMS0302S

FDMS0302S
Mfr. #:
FDMS0302S
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET PT8 30V/20V NCH ERTREN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMS0302S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Power-56-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
29 A
Rds On - Resistencia de la fuente de drenaje:
1.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.7 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
78 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.5 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench SyncFET
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
6 mm
Serie:
FDMS0302S
Tipo de transistor:
2 N-channel
Ancho:
5 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
181 S
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
43 ns
Tiempo típico de retardo de encendido:
20 ns
Unidad de peso:
0.002402 oz
Tags
FDMS030, FDMS03, FDMS0, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 30V 29A 8-Pin PQFN EP T/R
***r Electronics
Power Field-Effect Transistor, 29A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0302S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
N-Channel 30 V 28 A 1.9 mO Surface Mount PowerTrench SyncFET Mosfet - Power 56
*** Stop Electro
Power Field-Effect Transistor, 29A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ark
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 50A; 2mohm @ 10V; PowerPAK SO-8
***nell
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ure Electronics
N-Channel 30V 31A (Ta), 49A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
***ical
Trans MOSFET N-CH Si 30V 31A 8-Pin PQFN EP T/R
*** Stop Electro
Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0300S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 60 A 83 W 1.8 mOhm Power Mosfet - PowerPak-SO-8
***ment14 APAC
MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00145ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 83W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ark
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Cu
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK 1212-8
***nell
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Parte # Mfg. Descripción Valores Precio
FDMS0302S
DISTI # 31295237
ON SemiconductorPT8 30V/20V NCH POWERTRENCH SY15000
  • 3000:$0.4514
FDMS0302S
DISTI # FDMS0302SCT-ND
ON SemiconductorMOSFET N-CH 30V 29A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMS0302S
    DISTI # FDMS0302SDKR-ND
    ON SemiconductorMOSFET N-CH 30V 29A
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMS0302S
      DISTI # FDMS0302STR-ND
      ON SemiconductorMOSFET N-CH 30V 29A
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.5478
      FDMS0302S
      DISTI # FDMS0302S
      ON SemiconductorTrans MOSFET N-CH 30V 29A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS0302S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.4639
      • 6000:$0.4609
      • 12000:$0.4559
      • 18000:$0.4499
      • 30000:$0.4389
      FDMS0302S
      DISTI # 68X0367
      ON SemiconductorPT8 30V/20V NCH ERTREN / REEL0
      • 1:$0.7120
      FDMS0302SFairchild Semiconductor Corporation 
      RoHS: Not Compliant
      66000
      • 1000:$0.5300
      • 500:$0.5500
      • 100:$0.5800
      • 25:$0.6000
      • 1:$0.6500
      FDMS0302S
      DISTI # 512-FDMS0302S
      ON SemiconductorMOSFET PT8 30V/20V NCH ERTREN
      RoHS: Compliant
      2834
      • 1:$1.1700
      • 10:$0.9960
      • 100:$0.7650
      • 500:$0.6760
      • 1000:$0.5340
      • 3000:$0.4740
      • 9000:$0.4560
      Imagen Parte # Descripción
      LT1720IS8#PBF

      Mfr.#: LT1720IS8#PBF

      OMO.#: OMO-LT1720IS8-PBF

      Analog Comparators Dual 3V/5V Hi Speed Comparator
      LTC1422IS8#PBF

      Mfr.#: LTC1422IS8#PBF

      OMO.#: OMO-LTC1422IS8-PBF

      Hot Swap Voltage Controllers 2.7V to 12V, 8 Pin Hot Swap Controller
      XAL1010-103MEB

      Mfr.#: XAL1010-103MEB

      OMO.#: OMO-XAL1010-103MEB-1190

      Fixed Inductors 10uH 20% 15.5A 14.75mOhms AEC-Q200
      Disponibilidad
      Valores:
      Available
      En orden:
      1985
      Ingrese la cantidad:
      El precio actual de FDMS0302S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,17 US$
      1,17 US$
      10
      1,00 US$
      9,96 US$
      100
      0,76 US$
      76,50 US$
      500
      0,68 US$
      338,00 US$
      1000
      0,53 US$
      534,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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