IPB64N25S3-20

IPB64N25S3-20
Mfr. #:
IPB64N25S3-20
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET N-Ch 250V 64A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB64N25S3-20 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPB64N25S3-20 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IPB64N25
embalaje
Carrete
Alias ​​de parte
IPB64N25S320ATMA1 IPB64N25S320XT SP000876596
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
300 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
20 ns
Id-corriente-de-drenaje-continua
64 A
Vds-Drain-Source-Breakdown-Voltage
250 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
20 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
45 ns
Tiempo de retardo de encendido típico
18 ns
Qg-Gate-Charge
67 nC
Modo de canal
Mejora
Tags
IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descripción Valores Precio
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$3.7122
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$4.5336
  • 100:$5.5988
  • 10:$6.8280
  • 1:$7.6500
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$4.5336
  • 100:$5.5988
  • 10:$6.8280
  • 1:$7.6500
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1
Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB64N25S320ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.3900
  • 2000:$3.2900
  • 4000:$3.1900
  • 6000:$3.0900
  • 10000:$2.9900
IPB64N25S320ATMA1
DISTI # SP000876596
Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000876596)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€3.0900
  • 2000:€2.9900
  • 4000:€2.9900
  • 6000:€2.7900
  • 10000:€2.6900
IPB64N25S320ATMA1
DISTI # 13AC9030
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.0175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes0
  • 1:$6.3900
  • 10:$5.4300
  • 25:$5.1900
  • 50:$4.9500
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
IPB64N25S3-20
DISTI # 726-IPB64N25S3-20
Infineon Technologies AGMOSFET N-Ch 250V 64A D2PAK-2
RoHS: Compliant
42
  • 1:$6.3900
  • 10:$5.4300
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
  • 1000:$3.3800
IPB64N25S320ATMA1
DISTI # 726-IPB64N25S320ATMA
Infineon Technologies AGMOSFET N-Ch 250V 64A D2PAK-2
RoHS: Compliant
0
  • 1:$6.3900
  • 10:$5.4300
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
  • 1000:$3.3800
IPB64N25S3-20Infineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB2206
  • 1819:$1.5750
  • 1112:$1.6500
  • 1:$4.5000
IPB64N25S320ATMA1
DISTI # 1702295
Infineon Technologies AGMOSFET N-CH 250V 64A OPTIMOS-T D2PAK, RL1000
  • 1000:£2.3840
  • 2000:£2.3050
IPB64N25S320ATMA1
DISTI # 2725843
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263
RoHS: Compliant
0
  • 1:£4.4800
  • 10:£4.0000
  • 100:£3.4200
  • 250:£3.2400
  • 500:£2.9900
IPB64N25S320ATMA1
DISTI # 2725843
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263
RoHS: Compliant
0
  • 1:$12.1100
  • 10:$10.8100
  • 100:$8.8600
  • 500:$7.1800
Imagen Parte # Descripción
IPB64N25S3-20

Mfr.#: IPB64N25S3-20

OMO.#: OMO-IPB64N25S3-20

MOSFET N-Ch 250V 64A D2PAK-2
IPB64N25S320ATMA1

Mfr.#: IPB64N25S320ATMA1

OMO.#: OMO-IPB64N25S320ATMA1

MOSFET N-Ch 250V 64A D2PAK-2
IPB64N25S320ATMA1

Mfr.#: IPB64N25S320ATMA1

OMO.#: OMO-IPB64N25S320ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 250V 64A TO263-3
IPB64N25S3-20

Mfr.#: IPB64N25S3-20

OMO.#: OMO-IPB64N25S3-20-126

IGBT Transistors MOSFET N-Ch 250V 64A D2PAK-2
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de IPB64N25S3-20 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,36 US$
2,36 US$
10
2,24 US$
22,44 US$
100
2,13 US$
212,63 US$
500
2,01 US$
1 004,05 US$
1000
1,89 US$
1 890,00 US$
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