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IXZR18N50B-00

IXZR18N50B-00
Mfr. #:
IXZR18N50B-00
Fabricante:
Littelfuse
Descripción:
RF MOSFET Transistors 500V 18A RF MOSFET, with ISOPLUS-247B package assembly
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXZR18N50B-00 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXZR18N50B-00 DatasheetIXZR18N50B-00 Datasheet (P4)
ECAD Model:
Más información:
IXZR18N50B-00 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
19 A
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Rds On - Resistencia de la fuente de drenaje:
370 mOhms
Potencia de salida:
350 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Embalaje:
Tubo
Serie:
IXZR18
Escribe:
RF Power MOSFET
Marca:
IXYS
Transconductancia directa - Mín .:
6.7 S
Número de canales:
1 Channel
Tipo de producto:
Transistores RF MOSFET
Qg - Carga de puerta:
42 nC
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
20 V
Vgs th - Voltaje umbral puerta-fuente:
4.6 V
Tags
IXZR18, IXZR1, IXZR, IXZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Power MOSFETs
IXYS Power MOSFETs are designed for RF applications below 100MHz, linear applications, and high-power, high-frequency, and high-speed switching applications. These Power MOSFETs are available in a wide variety of standard industrial package options for a broad spectrum of market needs, electrical design requirements, and mechanical and mounting specifications.
Parte # Mfg. Descripción Valores Precio
IXZR18N50B-00
DISTI # V36:1790_14391245		IXYS Corporation247B PACKAGE ASSEMBLY0
  • 1020:$15.4800
  • 510:$17.8700
  • 120:$24.0000
  • 30:$42.5500
IXZR18N50B-00
DISTI # IXZR18N50B-00-ND		IXYS CorporationRF MOSFET N-CHANNEL PLUS247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		127In Stock
  • 120:$30.0000
  • 30:$32.0000
  • 10:$34.6000
  • 1:$37.0000
IXZR18N50B-00
DISTI # 747-IXZR18N50B-00		IXYS CorporationRF MOSFET Transistors 500V 18A RF MOSFET, with ISOPLUS-247B package assembly
RoHS: Compliant		24
  • 1:$42.5500
  • 10:$39.7900
  • 25:$36.3400
  • 100:$34.5000
  • 250:$30.2200
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Disponibilidad
Valores:
21
En orden:
2004
Ingrese la cantidad:
El precio actual de IXZR18N50B-00 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
42,55 US$
42,55 US$
10
39,79 US$
397,90 US$
25
36,34 US$
908,50 US$
100
34,50 US$
3 450,00 US$
250
30,22 US$
7 555,00 US$
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