SI4435BDY-T1-GE3

SI4435BDY-T1-GE3
Mfr. #:
SI4435BDY-T1-GE3
Fabricante:
Vishay Intertechnologies
Descripción:
MOSFET 30V 9.1A 2.5W 20mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4435BDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SI4435BDY-T1, SI4435BDY-T, SI4435BD, SI4435B, SI4435, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann
***ark
Transistor; Transistor Polarity:P Channel; Continuous Drain Current, Id:-9.1A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.035ohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes
***nell
MOSFET, P CH, 30V, 7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-; Power Dissipation Pd:1.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
Parte # Mfg. Descripción Valores Precio
SI4435BDY-T1-GE3
DISTI # 781-SI4435BDY-GE3
Vishay IntertechnologiesMOSFET 30V 9.1A 2.5W 20mohm @ 10V
RoHS: Compliant
0
    Imagen Parte # Descripción
    SI4435BDY

    Mfr.#: SI4435BDY

    OMO.#: OMO-SI4435BDY-1190

    Nuevo y original
    SI4435BDY(PB FREE )

    Mfr.#: SI4435BDY(PB FREE )

    OMO.#: OMO-SI4435BDY-PB-FREE--1190

    Nuevo y original
    SI4435BDY-T1

    Mfr.#: SI4435BDY-T1

    OMO.#: OMO-SI4435BDY-T1-1190

    MOSFET 30V 9.1A 1.5W
    SI4435BDY-T1-E3

    Mfr.#: SI4435BDY-T1-E3

    OMO.#: OMO-SI4435BDY-T1-E3-VISHAY

    MOSFET P-CH 30V 7A 8-SOIC
    SI4435BDY-T1-E3.

    Mfr.#: SI4435BDY-T1-E3.

    OMO.#: OMO-SI4435BDY-T1-E3--1190

    Nuevo y original
    SI4435BDY-T1-GE3

    Mfr.#: SI4435BDY-T1-GE3

    OMO.#: OMO-SI4435BDY-T1-GE3-1190

    MOSFET 30V 9.1A 2.5W 20mohm @ 10V
    SI4435BDY-TI-E3

    Mfr.#: SI4435BDY-TI-E3

    OMO.#: OMO-SI4435BDY-TI-E3-1190

    Nuevo y original
    SI4435BDY-TR

    Mfr.#: SI4435BDY-TR

    OMO.#: OMO-SI4435BDY-TR-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    1500
    Ingrese la cantidad:
    El precio actual de SI4435BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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    10
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    100
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    500
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    1000
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    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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